BUJD105AD

BUJD105AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching High voltage capability Very low switching and conduction losses 1.3 Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 1.4 Quick reference data Table 1. IC Ptot VCESM Quick reference Conditions Tmb ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max 8 80 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter Static characteristics hFE VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 8 13.5 - NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 2. Pinning information Table 2. Pin 1 2 3 mb B C E C Pinning information Symbol Description base collector emitter mounting base; connected to collector 2 1 3 Simplified outline [1] mb Graphic symbol C B E sym131 SOT428 (SC-63; DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package. 3. Ordering information Table 3. Ordering information Package Name BUJD105AD SC-63; DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Limiting values Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Tmb ≤ 25 °C; see Figure 3 see Figure 1; see Figure 2 Conditions VBE = 0 V IE = 0 A IB = 0 A Min -65 Max 700 700 400 8 16 4 8 80 150 150 Unit V V V A A A A W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 2 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode VCC LC 10 VCL(CE) probe point IC (A) 8 001aac049 IBon VBB LB DUT 6 001aab999 VBB = −5 V 4 −3 V −1 V 2 Fig 1. Test circuit for reverse bias safe operating area 0 0 200 400 600 800 VCEclamp (V) Fig 2. 120 Pder (%) 80 Reverse bias safe operating area 001aab993 40 0 0 40 80 120 Tmb (°C) 160 Fig 3. Normalized total power dissipation as a function of mounting base temperature BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 3 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 1.56 Unit K/W thermal resistance from see Figure 4 junction to mounting base thermal resistance from printed-circuit-board mounted; minimum junction to ambient footprint; see Figure 5 Rth(j-a) - 75 - K/W 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 0.05 0.02 0.01 tp T Ptot 001aab998 δ= tp T t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse width 7.0 7.0 2.15 1.5 2.5 4.57 001aab021 Fig 5. Minimum footprint SOT428 BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 4 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 6. Characteristics Table 6. Symbol hFE Characteristics Parameter DC current gain Conditions VCE = 5 V; IC = 4 A; Tmb = 25 °C; see Figure 6; see Figure 7 VCE = 5 V; IC = 1 mA; Tmb = 25 °C VCE = 5 V; IC = 500 mA; Tmb = 25 °C ICBO ICEO ICES IEBO VBEsat VCEOsus VCEsat VF tf collector-base cut-off current IE = 0 A; VCB = 700 V [1] [1] [1] [1] Min 8 10 13 400 Typ 13.5 17 23 1 0.3 1.07 20 Max 34 36 0.2 0.1 0.2 0.5 10 1.5 1 1.5 50 mA mA mA mA mA V V V V ns Unit Static characteristics collector-emitter cut-off IB = 0 A; VCE = 400 V current collector-emitter cut-off VCE = 700 V; VBE = 0 V; Tj = 25 °C current VCE = 700 V; VBE = 0 V; Tj = 125 °C emitter-base cut-off current IC = 0 A; VEB = 9 V base-emitter saturation IC = 4 A; IB = 0.8 A; see Figure 8 voltage collector-emitter sustaining voltage collector-emitter saturation voltage forward voltage fall time IB = 0 A; LC = 25 mH; IC = 10 mA; see Figure 9; see Figure 10 IB = 0.8 A; IC = 4 A; see Figure 11; see Figure 12 IF = 4 A IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH; inductive load; Tmb = 25 °C; see Figure 13; see Figure 14 IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH; inductive load; Tmb = 100 °C IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω; resistive load; Tj = 25 °C; see Figure 15; see Figure 16 Dynamic characteristics - 25 0.3 100 0.5 ns µs ton ts turn-on time storage time IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω; Tj = 25 °C; resistive load IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 Ω; resistive load; Tj = 25 °C IC = 5 A; IBon = 1 A; RL = 75 Ω; inductive load; Tj = 25 °C; LB = 1 µH; VBB = -5 V IC = 5 A; IBon = 1 A; IBoff = -1 A; inductive load; Tj = 100 °C; LB = 1 µH; VBB = -5 V - 0.65 1.8 1.2 1.4 1 2.5 1.7 1.9 µs µs µs µs [1] Measured with half sine-wave voltage (curve tracer). BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 5 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 102 001aac045 102 001aac046 hFE Tj = 100 °C 25 °C hFE Tj = 100 °C 25 °C 10 −40 °C 10 −40 °C 1 10−2 10−1 1 IC (A) 10 1 10−2 10−1 1 IC (A) 10 Fig 6. DC current gain as a function of collector current; typical values 1.3 001aac047 Fig 7. DC current gain as a function of collector current; typical values 50 V 100 Ω to 200 Ω horizontal VBEsat (V) 1.1 oscilloscope vertical 6V Tj = −40 °C 25 °C 30 Hz to 60 Hz 001aab987 0.9 300 Ω 1Ω 0.7 100 °C Fig 9. Test circuit for collector-emitter sustaining voltage 0.5 10−1 1 IC (A) 10 Fig 8. Base-emitter saturation voltage as a function of collector current; typical values BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 6 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode IC (mA) 2.0 VCEsat (V) 1.6 IC = 1 A 2A 3A 4A 001aab995 250 1.2 100 0.8 10 0 0.4 min VCEOsus VCE (V) 0 10−2 001aab988 Fig 10. Oscilloscope display for collector-emitter sustaining voltage test waveform 10−1 1 IB (A) 10 Fig 11. Collector-emitter saturation voltage as a function of base current; typical values 0.6 VCEsat (V) 0.4 IBon VBB Tj = 100 °C 25 °C −40 °C LB DUT 001aac048 VCC LC 001aab991 0.2 Fig 13. Test circuit for inductive load switching 0 10−1 1 IC (A) 10 Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 7 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode IC ICon 90 % VIM 0 tp T RB VCC RL DUT 001aab989 10 % tf IB ts toff IBon t t Fig 15. Test circuit for resistive load switching −IBoff 001aab992 Fig 14. Switching times waveforms for inductive load IC 90 % ICon 90 % 10 % t tf IB ton ts toff IBon 10 % t tr ≤ 30 ns −IBoff 001aab990 Fig 16. Switching times waveforms for resistive load BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 8 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E b2 A A1 A E1 mounting base D1 HD D2 2 L2 1 3 L L1 b1 e e1 b w M A c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 17. Package outline SOT428 (DPAK) BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 9 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 8. Revision history Table 7. Revision history Release date 20090508 Data sheet status Product data sheet Change notice Supersedes Document ID BUJD105AD_1 BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 10 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUJD105AD_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 8 May 2009 11 of 12 NXP Semiconductors BUJD105AD NPN power transistor with integrated diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 May 2009 Document identifier: BUJD105AD_1