Freescale Semiconductor
Technical Data
921 MHz--960 MHz SiFET
RF Integrated Power Amplifier
MHVIC910HNR2
LIFETIME BUY
The MHVIC910HNR2 integrated circuit is designed for GSM base stations,
uses Freescale’s newest High Voltage (26 Volts) LDMOS IC technology, and
contains a three--stage amplifier. Target applications include macrocell (driver
function) and microcell base stations (final stage). The device is in a PFP--16
Power Flat Pack package which gives excellent thermal performances through
a solderable backside contact.
• Typical GSM Performance: VDD = 26 Volts, IDQ = 150 mA, Pout = 10 Watts,
Full Frequency Band (921--960 MHz)
Power Gain — 39 dB (Typ)
Power Added Efficiency — 48% (Typ)
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW
Output Power
• Stable into a 10:1 VSWR. All Spurs Below --60 dBc @ 0 to 40 dBm CW
Pout.
Features
• On--Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated ESD Protection
• Usable Frequency Range — 921 to 960 MHz
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
960 MHz, 10 W, 26 V
GSM CELLULAR
RF LDMOS INTEGRATED CIRCUIT
16
1
CASE 978--03
PFP--16
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain Supply Voltage
Rating
VDD
28
Vdc
Gate Supply Voltage
VGS
6
Vdc
RF Input Power
Pin
5
dBm
Case Operating Temperature
TC
-- 30 to + 85
°C
Storage Temperature Range
Tstg
-- 65 to + 150
°C
Operating Channel Temperature
Tch
150
°C
Symbol
Value
Unit
RθJC
2.9
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
VD1
VD2
VD3
RFin
RFout
N.C.
1
VD2
2
VD1
3
N.C.
15 VD3/RFout
14 VD3/RFout
GND
4
13 VD3/RFout
RFin
5
6
12 VD3/RFout
11 VD3/RFout
7
8
10 N.C.
9 N.C.
VGATE1
VGATE2
VGATE3
VGATE1
VGATE2
VGATE3
Figure 1. Functional Block Diagram
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
16
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MHVIC910HNR2
Rev. 9, 5/2006
Figure 2. Pin Connections
MHVIC910HNR2
1
Table 3. ESD Protection Characteristics
Class
Human Body Model
0 (Minimum)
Machine Model
M2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22--A113, IPC/JEDEC J--STD--020
Table 5. Recommended Operating Ranges
Parameter
Symbol
Value
Unit
Drain Supply Voltage
VDD
26
Vdc
3rd Stage Quiescent Current
IDQ3
150
mA
2nd Stage Quiescent Current
IDQ2
50
mA
1st Stage Quiescent Current
IDQ1
25
mA
LIFETIME BUY
Table 6. Electrical Characteristics (TA = 25°C matched to a 50 Ω system, unless otherwise noted)
VDD = 26 V, VGS set for IDQ3 = 150 mA, frequency range 921--960 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
fRF
921
—
960
MHz
Output Power @ 1 dB Compression Point
P @ 1dB
39
40
—
dBm
Power Gain @ P1dB
G @ 1dB
38
39
—
dB
Power Added Efficiency @ 1 dB Compression Point
PAE @ 1dB
43
48
—
%
Input Return Loss @ P1dB
IRL @ 1dB
—
--15
--10
dB
GF
GV
—
—
.5
5
—
—
dB
dB
Frequency Range
Gain Flatness @ 40 dBm
Variation (TC = --30 to +85°C @ 40 dBm)
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Conditions
MHVIC910HNR2
2
RF Device Data
Freescale Semiconductor
1
16
2
15
3
14
C2
VD1
C3
VD3
C7
RF
INPUT
4
13
5
12
RF
OUTPUT
C6
R3
R1
LIFETIME BUY
11
7
10
8
9
C9
C4
VGS
R2
C1, C2, C3, C4, C5, C8
C6
C7
C9
6
C8
C5
C1
1 μF Surface Mount Chip Capacitors
4.7 pF AVX Chip Capacitor, ACCU--P (08051J4R7BBT)
47 pF AVX Chip Capacitor, ACCU--P (08055K470JBTTR)
33 pF AVX Chip Capacitor, ACCU--P (08053J330JBT)
J1, J2
J3, J4
R1, R2, R3
PCB
Header (Break--away), HDR2X10STIMCSAFU
SMA Connector 2052--1618--02 (Threaded)
100 Ω Chip Resistors (0402)
Rogers 04350, 20 mils
Figure 3. 921--960 MHz Demo Board Schematic
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
VD2
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
3
VD1
VD2
VD3
C2
C3
C7
LIFETIME BUY
RF Input
C6
C4
R3
C5
R1
VG1
C9
RF Output
C1
R2
VG2
VG3
MHVIC910HR2
900 MHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. 921--960 MHz Demo Board Component Layout
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C8
MHVIC910HNR2
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G ps, POWER GAIN (dB)
42
41
PAE, POWER ADDED EFFICIENCY (%)
TC = --30°C, IDQ3 = 150 mA
TC = +25°C, IDQ3 = 150 mA
40
TC = +25°C, IDQ3 = 120 mA
39
TC = +25°C, IDQ3 = 110 mA
38
TC = +85°C, IDQ3 = 150 mA
37
36
TC = --30°C
45
40
35
30
25
20
IDQ3 = 150 mA
f = 960 MHz
15
10
35
2
0
4
6
8
10
0
12
2
4
6
8
10
12
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
Figure 6. Power Added Efficiency
versus Output Power
43
100
TC = --30°C, IDQ3 = 150 mA
Gps , POWER GAIN (dB)
42
+25°C
10
TC = --30°C
+85°C
1
--15
--13
--11
--9
--7
--5
--3
--1
1
3
41
40
TC = +25°C, IDQ3 = 150 mA
39
TC = +25°C, IDQ3 = 120 mA
38
TC = +85°C, IDQ3 = 150 mA
37
IDQ3 = 150 mA
f = 960 MHz
36
910
5
920
930
940
950
960
970
f, FREQUENCY (MHz)
Pin, INPUT POWER (dBm)
Figure 8. Power Gain versus Frequency
Pout = 10 W
Figure 7. Output Power versus Input Power
48
43
PAE, POWER ADDED EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
LIFETIME BUY
Pout, OUTPUT POWER (WATTS)
TC = --30°C, IDQ3 = 150 mA
42
Gps , POWER GAIN (dB)
+25°C
+85°C
41
TC = +25°C, IDQ3 = 150 mA
40
39
TC = +25°C, IDQ3 = 120 mA
38
TC = +25°C, IDQ3 = 110 mA
37
TC = +85°C, IDQ3 = 150 mA
47.5
47
TC = +25°C, IDQ3 = 120 mA
46.5
46
45.5
45
TC = +25°C, IDQ3 = 150 mA
44.5
44
43.5
f = 960 MHz
43
36
910
920
930
940
950
960
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Frequency
Pout = P1dB
970
910
920
930
940
950
960
970
f, FREQUENCY (MHz)
Figure 10. Power Added Efficiency versus Frequency
Pout = 10 W
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
50
43
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
--14
--16
TC = +85°C
+25°C
--18
--20
--30°C
--14
--16
TC = +85°C
+25°C
--18
--20
--30°C
VDD = 26 Vdc
VDD = 26 Vdc
--22
--22
920
910
930
940
950
960
970
920
910
930
Figure 11. Input Return Loss versus Frequency
Pout = 10 W
4.5
4
Pout = 2.0 W (RMS)
3.5
3
2.5
2
1.5
0.5 W (RMS)
1
0.5
VDD = 26 Vdc
f = 880 MHz
0.1 W (RMS)
0
150
140
160
170
950
960
970
180
190
Figure 12. Input Return Loss versus Frequency
Pout = P1dB
--50
--55
Pout = 2.0 W (RMS)
--60
--65
0.5 W (RMS)
--70
0.1 W (RMS)
2.0 W (RMS)
--75
0.5 W (RMS)
--80
0.1 W (RMS)
--85
= 400 kHz
= 600 kHz
VDD = 26 Vdc
f = 880 MHz
--90
200
150
140
160
170
180
190
200
IDQ, DRAIN QUIESCENT CURRENT (mA)
IDQ, DRAIN QUIESCENT CURRENT (mA)
Figure 13. Error Vector Magnitude versus IDQ Total
Figure 14. Adjacent Channel Power Ratio
versus IDQ Total
8
8
7
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
940
f, FREQUENCY(MHz)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
EVM, ERROR VECTOR MAGNITUDE (%)
LIFETIME BUY
f, FREQUENCY(MHz)
Pin = 1.0 mW
6
0.8 mW
5
0.6 mW
4
0.4 mW
3
2
IDQ total = 180 mA
f = 880 MHz
1
7
Pin = 1.0 mW
6
0.8 mW
5
0.6 mW
4
0.4 mW
3
2
IDQ total = 170 mA
f = 880 MHz
1
0
0
16
17
18
19
20
21
22
23
24
25
26
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 15. Output Power versus Supply Voltage
16
17
18
19
20
21
22
23
24
25
26
VDD, SUPPLY VOLTAGE (VOLTS)
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
--12
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
--12
Figure 16. Output Power versus Supply Voltage
MHVIC910HNR2
6
RF Device Data
Freescale Semiconductor
30
--15
IRL
25
20
--20
VDD = 26 Vdc
Pout = 10 W (PEP)
IDQ total = 200 mA
Two--Tone Measurement, 100 kHz Tone Spacing
IMD
--25
15
--30
10
820
840
860
880
900
920
940
--35
960
Gps
--5
35
η
--10
30
--15
IRL
25
20
IMD
15
10
820
840
860
LIFETIME BUY
f, FREQUENCY (MHz)
--10
Two--Tone Measurement
100 kHz Tone Spacing
30
IRL
25
--5
Pout = 10 W (PEP), IDQ total = 200 mA
η
--15
--20
IMD
20
--25
15
--30
10
820
840
860
880
900
920
940
40
η
Pout
9
6
20
VDD = 26 Vdc
IDQ total = 180 mA
f = 880 MHz
3
0
0.5
0
1
40
Pout
30
6
20
VDD = 26 Vdc
IDQ total = 170 mA
f = 880 MHz
10
0
0
0
0.5
1
1.5
2
1.5
2
2.5
3
3.5
Figure 20. CW Performance @ 880 MHz
2.5
3
Pin, INPUT POWER (mW)
Figure 21. CW Performance @ 880 MHz
3.5
15
50
Gps
12
Pout , OUTPUT POWER (WATTS)
Gps
3
10
Pin, INPUT POWER (mW)
50
η
30
0
--35
960
15
Pout , OUTPUT POWER (WATTS)
Gps
12
Figure 19. Two--Tone Broadband Performance
9
--35
960
940
50
f, FREQUENCY (MHz)
12
920
15
Pout , OUTPUT POWER (WATTS)
VDD = 26 Vdc
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
0
35
900
--30
Figure 18. Two--Tone Broadband Performance
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
45
Gps
880
--25
f, FREQUENCY (MHz)
Figure 17. Two--Tone Broadband Performance
40
--20
VDD = 26 Vdc
Pout = 10 W (PEP)
IDQ total = 200 mA
Two--Tone Measurement, 100 kHz Tone Spacing
40
η
Pout
9
30
6
20
VDD = 26 Vdc
IDQ total = 160 mA
f = 880 MHz
3
10
0
0
0
0.5
1
1.5
2
2.5
3
Pin, INPUT POWER (mW)
3.5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
--10
η
40
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
35
--5
0
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
Gps
40
45
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
0
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
45
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Figure 22. CW Performance @ 880 MHz
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
7
--25
VDD = 26 Vdc
f1 = 880.0 MHz, f2 = 880.1 MHz
Two--Tone Measurement
100 kHz Tone Spacing
--30
--35
IDQ total = 140 mA
160 mA
170 mA
--40
180 mA
--45
--50
--55
--60
LIFETIME BUY
0.01
0.1
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 23. Intermodulation Distortion versus
Output Power
10
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
MHVIC910HNR2
8
RF Device Data
Freescale Semiconductor
f
MHz
Zload
Ω
900
7.81 + j4.61
920
7.27 + j4.90
940
6.77 + j5.23
960
6.31 + j5.59
980
5.90 + j5.96
1000
5.53 + j6.36
Zo = 10 Ω
Zload
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
f = 1000 MHz
load
Figure 24. Series Equivalent Load Impedance
f = 900 MHz
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
LIFETIME BUY
VDD = 26 V, IDQ = 225 mA, Pout = 40 dBm
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
9
NOTES
MHVIC910HNR2
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D
e/2
D1
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
b1
Y
c
A A2
b
DATUM
PLANE
SEATING
PLANE
H
aaa
M
ccc C
θ
W
GAUGE
PLANE
W
L
C A
SECT W--W
L1
C
c1
A1
1.000
0.039
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE --H-- IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE --H--.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS --A-- AND --B-- TO BE DETERMINED AT
DATUM PLANE --H--.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
θ
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
-----0.600
0_
7_
0.200
0.200
0.100
DETAIL Y
CASE 978--03
ISSUE C
PFP--16
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
11
How to Reach Us:
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
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For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHVIC910HNR2
Document Number: MHVIC910HNR2
Rev. 9, 5/2006
12
RF Device Data
Freescale Semiconductor
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