MRF5S9101NR1

Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 3, 5/2006 Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF5S9101MR1 MRF5S9101MBR1 RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 18 dB Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 2.3% rms • Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power, @ f = 960 MHz • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 869 - 960 MHz, 100 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9101MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9101MBR1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 427 2.44 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit ARCHIVE INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 50 W CW RθJC 0.41 0.47 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF5S9101MR1 MRF5S9101MBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C ARCHIVE INFORMATION Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 2 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.21 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 7 — S Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 70 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.2 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, Pout = 100 W, IDQ = 700 mA, f = 960 MHz Power Gain Gps 16 17.5 19 dB Drain Efficiency ηD 56 60 — % Input Return Loss IRL — - 15 -9 dB P1dB 100 110 — W Pout @ 1 dB Compression Point, CW 1. Part is internally input matched. ARCHIVE INFORMATION Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) MRF5S9101MR1 MRF5S9101MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, Pout = 50 W Avg., IDQ = 650 mA, 869 MHz