MRF9080LR3

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 920 - 960 MHz, 75 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465 - 06, STYLE 1 NI - 780 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.7 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M1 (Minimum) LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Document Number: MRF9080 Rev. 8, 10/2008 MRF9080LR3 1 Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 8.0 — S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 73 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 2.9 — pF Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) P1dB 68 75 — W Common - Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) Gps 17 18.5 20 dB Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) η1 47 52 — % Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) η2 — 55 — % Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) IRL 9.5 12.5 — dB Off Characteristics LIFETIME BUY On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) 1. Part is internally input matched. LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRF9080LR3 2 RF Device Data Freescale Semiconductor R3 C18 + + C7 R2 VDD C17 C6 R1 C5 C11 C12 C13 C1 RF INPUT DUT C3 C15 RF OUTPUT C14 C2 C4 LIFETIME BUY C16 C8 C9 C10 Figure 1. Broadband GSM 900 Test Circuit Schematic Table 5. Broadband GSM 900 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 4.7 pF Chip Capacitor ATC100B4R7BT500XT ATC C2 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C3 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C4, C5, C9, C10, C12, C13 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C6, C16, C17 22 pF Chip Capacitors ATC100B220GT500XT ATC C7, C18 10 μF, 35 V Tantalum Chip Capacitors T491D106M035AT Kemet C8, C11 10 pF Chip Capacitors ATC100B100JT500XT ATC C14 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C15 8.2 pF Chip Capacitor ATC100B8R2GT500XT ATC R1, R2, R3 1.0 kΩ, 1/8 W Chip Resistors CRCW08051001FKEA Vishay Raw PCB Material 30 mil Glass Teflon®, εr = 2.55 TLX8 - 0300 Taconic LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 VGG MRF9080LR3 RF Device Data Freescale Semiconductor 3 C18 C7 VDD R3 C17 R2 C6 RF INPUT C1 C2 C3 WB1 C4 LIFETIME BUY C11 C12 C13 CUT OUT AREA R1 C5 RF OUTPUT C15 C16 WB2 C14 C8 C9 C10 MRF9080 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. Broadband GSM 900 Test Circuit Component Layout LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 VGG MRF9080LR3 4 RF Device Data Freescale Semiconductor + C6 R1 U1 C5 R2 R3 VDD + P1 C9 R4 + T1 C15 C4 C3 C13 DUT RF INPUT LIFETIME BUY C10 C7 R5 RF OUTPUT C14 R6 C1 C2 C11 C12 C8 Figure 3. Broadband GSM 900 Optimized Demo Board Schematic Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values Part Description Part Number Manufacturer C1 4.7 pF Chip Capacitor, ACCU - P 08051J4R7CBS AVX C2 3.9 pF Chip Capacitor, ACCU - P 08051J3R9CBS AVX C3, C15 22 pF Chip Capacitors, ACCU - P 08051J221CBS AVX C4, C6 22 mF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet C5 1 mF Chip Capacitor, ACCU - P 08053105 AVX C7, C8 5.6 pF Chip Capacitors, ACCU - P 08051J5R6CBS AVX C9 220 mF, 63 V Electrolytic Capacitor 2222 - 136 - 68221 Vishay C10, C11 3.3 pF Chip Capacitors, ACCU - P 08051J3R3CBS AVX C12, C13 2.2 pF Chip Capacitors, ACCU - P 08051J2R2CBS AVX C14 4.7 pF Chip Capacitor ATC100B4R7JT500XT ATC P1 5.0 kΩ Potentiometer CMS Cermet Multi - turn 3224W Bourns R1 10 Ω, 1/8 W Chip Resistor CRCW080510R0FKEA Vishay R2, R5, R6 1 kΩ, 1/8 W Chip Resistor CRCW08051001FKEA Vishay R3 1.2 kΩ, 1/8 W Chip Resistor CRCW08051201FKEA Vishay R4 2.2 kΩ, 1/8 W Chip Resistor CRCW08052201FKEA Vishay T1 Bipolar NPN Transistor, SOT - 23 BC847ALT1G ON Semiconductor U1 Voltage Regulator, Micro - 8 LP2951ACDMR2G ON Semiconductor Substrate = Taconic RF35, Thickness 0.5 mm LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 VGG MRF9080LR3 RF Device Data Freescale Semiconductor 5 C5 R1 Ground VSUPPLY U1 R2 R4 T1 C9 C6 P1 R3 C15 C4 R5 C7 R6 C3 C10 C13 C11 C12 C1 LIFETIME BUY C2 C14 C8 MRF9080 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 VBIAS MRF9080LR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS (IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD) 20 30 Vdc 600 mA 19 400 mA 10 Pout, OUTPUT POWER (WATTS) 19 18 IDQ = 600 mA f = 940 MHz T = 25°C 17 100 Figure 5. Power Gain versus Output Power Gps 20 Pout = 20 W 70 W 19 −15 Pout = 20 W 17 −5 −10 IRL 18 −20 70 W VDD = 26 Vdc IDQ = 600 mA T = 25°C 16 15 850 870 890 −25 910 100 60 50 100 90 80 70 −30 930 950 970 990 1010 1030 1050 f, FREQUENCY (MHz) 60 50 40 30 20 10 0 h 40 30 Pout 0 0.4 0.2 0.6 0.8 1.4 1 1.2 Pin, INPUT POWER (WATTS) 1.6 110 P out , OUTPUT POWER (WATTS) 50°C 85°C 18 17 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1 10 Pout, OUTPUT POWER (WATTS) Figure 9. Power Gain versus Output Power 10 0 1.8 55 100 25°C 19 20 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz T = 25°C Figure 8. Output Power and Efficiency versus Input Power 20 G ps , POWER GAIN (dB) 10 Pout, OUTPUT POWER (WATTS) 120 110 Figure 7. Power Gain and Input Return Loss versus Frequency 16 1 Figure 6. Power Gain versus Output Power 0 21 VDD = 22 Vdc h, DRAIN EFFICIENCY (%) 1 IRL, INPUT RETURN LOSS (dB) P out , OUTPUT POWER (WATTS) G ps , POWER GAIN (dB) VDD = 26 Vdc f = 940 MHz T = 25°C 26 Vdc 50 25°C 90 85°C h 80 25°C 70 45 40 35 85°C 30 60 50 25 Pout 20 40 15 30 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 20 10 100 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 10 h, DRAIN EFFICIENCY (%) 18 17 LIFETIME BUY 800 mA 20 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) IDQ = 1000 mA LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 21 5 0 1.8 Pin, INPUT POWER (WATTS) Figure 10. Output Power and Efficiency versus Input Power MRF9080LR3 RF Device Data Freescale Semiconductor 7 f = 880 MHz f = 1000 MHz Zo = 10 Ω f = 880 MHz Zsource LIFETIME BUY f = 1000 MHz VDD = 26 V, IDQ = 600 mA, Pout = 90 W CW f MHz Zsource Ω Zload Ω 880 0.91 - j2.11 1.22 - j0.12 920 0.88 - j2.65 1.00 - j0.16 960 1.6 - j2.61 1.22 - j0.22 1000 2.45 - j3.38 1.14 - j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Zload Figure 11. Series Equivalent Source and Load Impedance MRF9080LR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A M B M M bbb N M T A M B M ccc M T A M M aaa M T A M S (LID) ccc H R (INSULATOR) M T A M B (LID) B M (INSULATOR) B M C F E A A T SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF9080LR3 MRF9080LR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 8 Oct. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part numbers, p. 3, 5 • Added Product Documentation and Revision History, p. 10 MRF9080LR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9080LR3 Document Number: RF Device Data MRF9080 Rev. 8, 10/2008 Freescale Semiconductor 11