MRFG35020AR1

Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300--3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. • Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 11.5 dB Drain Efficiency — 22% RCE — --33 dB Meets ETSI Type G Mask • 20 Watts P1dB @ 3500 MHz, CW Features • Supports up to 28 MHz Bandwidth OFDM Signals • Internally Input Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Excellent Thermal Stability • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. 3.5 GHz, 20 W, 12 V WiMAX POWER FET GaAs PHEMT CASE 360E--01, STYLE 2 NI--360 SHORT LEAD Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 15 Vdc Gate--Source Voltage VGS --5 Vdc RF Input Power Pin 34 dBm Storage Temperature Range Tstg --40 to +150 °C Channel Temperature (1) Tch 175 °C Symbol Value (2) Unit RθJC 2.7 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Document Number: MRFG35020A Rev. 1, 12/2008 1. For reliable operation, the operating channel temperature should not exceed 150°C. Exceeding 150°C channel operating temperature may result in device performance degradation. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFG35020AR1 1 Table 3. ESD Protection Characteristics Class 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Off State Drain Current (VDS = 3.5 Vdc, VGS = --2.2 Vdc) IDSO — 10 425 μAdc Off State Current (VDS = 28.5 Vdc, VGS = --2.5 Vdc) IDSX — 2 42.5 mAdc VGS(th) --1.2 --0.95 --0.7 Vdc Characteristic DC Characteristics Gate--Source Cut--off Voltage (VDS = 3.5 Vdc, IDS = 42.5 mA) LIFETIME BUY Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 300 mA, Pout = 2 W Avg., f = 3500 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 9.5 11.5 — dB Drain Efficiency ηD 18 22 — % ACPR — --43 --39 dBc — W Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Output Power, 1 dB Compression Point, CW 1. Measurements made with device in test fixture. P1dB — 20 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology Human Body Model (per JESD22--A114) MRFG35020AR1 2 RF Device Data Freescale Semiconductor VBIAS VSUPPLY C7 C6 C5 LIFETIME BUY Z5 C13 C4 C14 C3 C15 C2 C16 R1 Z1 Z3 Z2 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z9 Z10 Z12 Z11 C17 0.021″ x 0.728″ Microstrip 0.045″ x 0.522″ Microstrip 0.200″ x 0.215″ Microstrip 0.150″ x 0.522″ Microstrip 0.279″ x 90° Microstrip Radial Stub 0.060″ x 0.420″ Microstrip C10 Z7 Z8 C1 C11 Z6 Z4 RF INPUT C12 RF OUTPUT Z13 C18 Z8 Z9 Z10 Z11, Z12 Z13 PCB 0.375″ x 0.172″ Microstrip 0.074″ x 0.068″ Microstrip 0.030″ x 0.347″ Microstrip 0.040″ x 0.050″ Microstrip 0.021″ x 0.713″ Microstrip Rogers 4350, 0.010″, εr = 3.5 Figure 1. MRFG35020A Test Circuit Schematic Table 5. MRFG35020A Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 3.9 pF Chip Capacitor 08051J3R9BBS AVX C2, C16 10 pF Chip Capacitors ATC100A100JT150XT ATC C3, C15 100 pF Chip Capacitors ATC100A101JT150XT ATC C4, C14 100 pF Chip Capacitors ATC100B101JT500XT ATC C5, C13 1000 pF Chip Capacitors ATC100B102JT50XT ATC C6, C12 0.01 μF Chip Capacitors ATC200B103KT50XT ATC C7, C11 39K pF Chip Capacitors ATC200B393KT50XT ATC C8, C10 10 μF Chip Capacitors GRM55DR61H106KA88B Murata C9 None C17 1.8 pF Chip Capacitors 08051J1R8BBS AVX C18 1.5 pF Chip Capacitor 08051J1R5BBS AVX R1 6.2 Ω, 1/4 W Chip Resistor CRCW12066R20FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C8 MRFG35020AR1 RF Device Data Freescale Semiconductor 3 C7 C6 C13 C5 C2 C12 C11 C10 C14 C4 C3 C15 C16 R1 C17 C18 CUT OUT AREA LIFETIME BUY C1 Figure 2. MRFG35020A Test Circuit Component Layout MRFG35020A Rev. 2 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C8 MRFG35020AR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 50 40 12 Gps 10 30 8 20 ηD 6 10 4 0 20 22 24 26 28 30 32 34 36 38 Pout, OUTPUT POWER (dBm) --5 0 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ΓS = 0.697∠--153.9_, ΓL = 0.949∠--166.7_ --10 --20 --10 --15 IRL --30 --20 --40 --25 ACPR --50 20 22 24 26 28 30 32 34 36 38 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) LIFETIME BUY Figure 3. Single--Channel W--CDMA Power Gain and Drain Efficiency versus Output Power --30 Pout, OUTPUT POWER (dBm) Figure 4. Single--Channel W--CDMA Adjacent Channel Power Ratio and IRL versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 14 Gps, POWER GAIN (dB) 60 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ΓS = 0.697∠--153.9_, ΓL = 0.949∠--166.7_ ηD, DRAIN EFFICIENCY (%) 16 MRFG35020AR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 60 Gps 50 10 40 8 30 6 20 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) ηD 4 2 24 26 28 30 32 34 36 38 40 10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 12 0 42 Figure 5. Single--Channel W--CDMA Power Gain and Drain Efficiency versus Output Power 0 0 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --10 --10 IRL --20 --20 --30 --30 --40 --40 ACPR --50 24 26 28 30 32 34 30 36 38 40 42 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) --50 Pout, OUTPUT POWER (dBm) Figure 6. Single--Channel W--CDMA Adjacent Channel Power Ratio and IRL versus Output Power 16 Gps, POWER GAIN (dB) 14 32 VDS = 12 Vdc, IDQ = 300 mA, Pout = 33 dBm Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 30 28 12 Gps 10 26 24 8 ηD 6 4 3400 22 3450 3500 3550 20 3600 f, FREQUENCY (MHz) Figure 7. Single--Channel W--CDMA Power Gain and Drain Efficiency versus Frequency ηD, DRAIN EFFICIENCY (%) LIFETIME BUY Pout, OUTPUT POWER (dBm) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 14 NOTE: Data is generated from the test circuit shown. MRFG35020AR1 6 RF Device Data Freescale Semiconductor 0 VDS = 12 Vdc, IDQ = 300 mA, Pout = 33 dBm Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --10 --5 --10 --20 IRL --30 --15 --40 --20 ACPR --50 3400 3450 3500 --25 3600 3550 Figure 8. Single--Channel W--CDMA Adjacent Channel Power Ratio and IRL versus Frequency --5 60 VDS = 12 Vdc, IDQ = 300 mA, f = 3500 MHz Single--Carrier OFDM 802.16d, 64 QAM 3/4 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF --10 --15 50 40 --20 30 20 --25 ηD --30 10 EVM --35 0 20 22 24 26 28 30 32 34 36 38 40 42 Pout, OUTPUT POWER (dBm) Figure 9. Single--Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power NOTE: Data is generated from the test circuit shown. ηD, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (dB) LIFETIME BUY f, FREQUENCY (MHz) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 0 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS MRFG35020AR1 RF Device Data Freescale Semiconductor 7 Zsource LIFETIME BUY f = 3500 MHz Zload f = 3500 MHz VDD = 12 Vdc, IDQ = 300 mA, Pout = 2 W Avg. f MHz Zsource Ω Zload Ω 3500 9.4 -- j11.2 1.3 -- j5.8 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 25 Ω MRFG35020AR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFG35020AR1 RF Device Data Freescale Semiconductor 9 MRFG35020AR1 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Dec. 2008 • Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for standardization across products, p. 1 LIFETIME BUY • Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRFG35020AR1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRFG35020AR1 Document Number: MRFG35020A Rev. 1, 12/2008 12 RF Device Data Freescale Semiconductor