Document Number: MW4IC2020
Freescale Semiconductor
Rev. 8, 5/2006
Replaced
by
MW4IC2020NBR1(GNBR1).
There
are
no
form,
fit
or
function
changes with this
Technical Data
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
ARCHIVE INFORMATION
The MW4IC2020 wideband integrated circuit is designed with on - chip
matching that makes it usable from 1600 to 2400 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
• Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
Pout.
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VRD1
VRG1
VDS2
VDS1
3 Stages IC
RFin
VDS3/RFout
VGS1
VGS2
VGS3
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC2020MBR1
MW4IC2020GMBR1
1805- 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
GND
VDS2
VRD1
VRG1
VDS1
1
2
3
4
5
16
15
RFin
6
14
VDS3/
RFout
VGS1
VGS2
VGS3
GND
7
8
9
10
11
13
12
GND
GND
ARCHIVE INFORMATION
RF LDMOS Wideband Integrated
Power Amplifiers
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2020MBR1 MW4IC2020GMBR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Input Power
Pin
20
dBm
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
ARCHIVE INFORMATION
Thermal Resistance, Junction to Case
RθJC
Stage 1
Stage 2
Stage 3
°C/W
10.5
5.1
2.3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA,
IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW
Power Gain
Gps
Drain Efficiency
f1 = 1805 MHz, f2 = 1805.1 MHz
f1 = 1990 MHz, f2 = 1990.1 MHz
ηD
27
29
24
18
26
20
—
dB
—
%
Input Return Loss
IRL
—
—
- 10
dB
Intermodulation Distortion
IMD
—
- 32
- 27
dBc
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA,
1805 MHz