MW4IC2020NBR1

Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain — 29 dB IMD — - 32 dBc Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain — 29 dB Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM — 1% rms • Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout. • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VRD1 VRG1 VDS2 VDS1 3 Stages IC RFin VDS3/RFout VGS1 VGS2 VGS3 Quiescent Current Temperature Compensation Figure 1. Functional Block Diagram MW4IC2020NBR1 MW4IC2020GNBR1 1805- 1990 MHz, 20 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2020NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2020GNBR1 GND VDS2 VRD1 VRG1 VDS1 1 2 3 4 5 16 15 RFin 6 14 VDS3/ RFout VGS1 VGS2 VGS3 GND 7 8 9 10 11 13 12 GND GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Input Power Pin 20 dBm Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RθJC Stage 1 Stage 2 Stage 3 °C/W 10.5 5.1 2.3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW Power Gain Gps Drain Efficiency f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz ηD 27 29 24 18 26 20 — dB — % Input Return Loss IRL — — - 10 dB Intermodulation Distortion IMD — - 32 - 27 dBc Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1805 MHz