MW4IC2020D

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain — 29 dB IMD — - 32 dBc Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain — 29 dB Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM — 1% rms Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 97 Pilot, Sync, Paging, Traffic Codes 8 through 13 Power Gain — 30 dB ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VRD1 VRG1 VDS2 VDS1 MW4IC2020MBR1 MW4IC2020GMBR1 1805 - 1990 MHz, 20 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Freescale Semiconductor, Inc... CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2020MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2020GMBR1 PIN CONNECTIONS GND VDS2 VRD1 VRG1 VDS1 RFin VDS3/RFout VGS1 VGS2 VGS3 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND 3 Stages IC 14 RFin VDS3/ RFout (Top View) NOTE: Exposed backside flag is source Functional Block Diagram terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. REV 4 VGS1 VGS2 VGS3 Quiescent Current Temperature Compensation 13 12 GND MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MW4IC2020MBR1 MW4IC2020GMBR1 1 Freescale Semiconductor, Inc. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 - 0.5, +15 - 65 to +175 175 20 Unit Vdc Vdc °C °C dBm THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RθJC Value (1) 10.5 5.1 2.3 Unit °C/W ESD PROTECTION CHARACTERISTICS Freescale Semiconductor, Inc... Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22 - A113 Rating 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW Power Gain Drain Efficiency f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz Input Return Loss Intermodulation Distortion Stability (100 mW