Freescale Semiconductor
Technical Data
Document Number: MW7IC3825N
Rev. 1, 11/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on--chip
matching that makes it usable from 3400 -- 3600 MHz. This multi -- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 230 mA,
Pout = 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 25 dB
Power Added Efficiency — 15%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --48 dBc in 1 MHz Channel Bandwidth
Driver Applications
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 190 mA, IDQ2 = 230 mA,
Pout = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 23.5 dB
Power Added Efficiency — 3.5%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --55 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW
Output Power
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 0 to 44 dBm CW Pout
• Typical Pout @ 1 dB Compression Point ≃ 30 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, RF Choke to Ground)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (1)
VGS2
Figure 1. Functional Block Diagram
MW7IC3825NR1
MW7IC3825GNR1
MW7IC3825NBR1
3400--3600 MHz, 5 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886--01
TO--270 WB--16
PLASTIC
MW7IC3825NR1
CASE 1887--01
TO--270 WB--16 GULL
PLASTIC
MW7IC3825GNR1
CASE 1329--09
TO--272 WB--16
PLASTIC
MW7IC3825NBR1
GND
VDS1
VGS2
VGS1
NC
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
45
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
WiMAX Application
(Case Temperature 71°C, Pout = 5 W CW)
RθJC
°C/W
Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 230 mA
4.7
1.3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 130 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (4)
(VDD = 28 Vdc, IDQ1 = 130 mA, Measured in Functional Test)
VGG(Q)
3.5
4.2
5
Vdc
Stage 1 -- Off Characteristics
Stage 1 -- On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VGG = 1.55 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 120 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 230 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, IDQ2 = 230 mA, Measured in Functional Test)
VGG(Q)
2.5
3.3
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.2
0.5
1.2
Vdc
Coss
—
72.3
—
pF
Stage 2 -- Off Characteristics
Stage 2 -- On Characteristics
Stage 2 -- Dynamic Characteristics (2)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg.,
f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
21
25
32
dB
Power Added Efficiency
PAE
12
15
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
7.5
8.5
—
dB
ACPR
—
--48
--45
dBc
IRL
—
--12
--6
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances OFDM Signal -- 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 =
130 mA, IDQ2 = 230 mA, Pout = 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error (4)
Error Vector Magnitude
(4)
RCE
—
--33
—
dB
EVM
—
2.2
—
% rms
1. VGG = 1.22 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
4. RCE = 20Log(EVM/100).
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, 3400--3600 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
30
—
—
83
—
W
IMD Symmetry @ 2 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
90
—
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 5 W Avg.
GF
—
0.7
—
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout = 25 W CW
Φ
—
3.15
—
°
Delay
—
3.21
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 25 W CW,
f = 3500 MHz, Six Sigma Window
∆Φ
—
13.88
—
°
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.046
—
dB/°C
∆P1dB
—
0.015
—
dB/°C
Average Group Delay @ Pout = 25 W CW, f = 3500 MHz
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @
0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
—
23.5
—
dB
Power Added Efficiency
PAE
—
3.5
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
—
9.2
—
dB
ACPR
—
--55
—
dBc
IRL
—
--12
—
dB
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
4
RF Device Data
Freescale Semiconductor
VD1
C1
RF
INPUT
C6
Z1
Z2
Z4
Z6
Z8
Z10
Z12
Z3
Z5
Z7
Z9
Z11
1
2
3
4
5
C5
C7
C17 Z13
VG1
C16
16
NC 15
VGS2
VGS1
NC
14
7
8
9
C14
10 VD1
11
R1
VG2
DUT
6
NC
C15
NC
Quiescent Current
Temperature
Compensation
NC 13
12
R2
C13
C9
VD2
+
C4
Z42
C3
C2
C12
Z41
Z26
Z25
Z40
Z15 Z16 Z17 Z18 Z19
Z14
Z20
Z21
Z43
Z23
Z24
Z28 Z29
Z22
Z27
Z30
C8
Z31
Z33
Z36
Z32
Z34
RF
Z37
OUTPUT
Z38 Z39
Z35
Z44
Z45
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
0.118″ x 0.044″ Microstrip
0.205″ x 0.044″ Microstrip
0.083″ x 0.096″ Microstrip
0.195″ x 0.044″ Microstrip
0.094″ x 0.132″ Microstrip
0.509″ x 0.044″ Microstrip
0.083″ x 0.091″ Microstrip
0.372″ x 0.044″ Microstrip
0.078″ x 0.192″ Microstrip
0.078″ x 0.044″ Microstrip
0.079″ x 0.141″ Microstrip
0.243″ x 0.044″ Microstrip
0.605″ x 0.044″ Microstrip
0.232″ x 0.340″ Microstrip
0.042″ x 0.340″ Microstrip
0.112″ x 0.150″ Microstrip
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26
Z27
Z28
Z29
Z30
Z31
C11
R3
0.230″ x 0.090″ Microstrip
0.125″ x 0.125″ Microstrip
0.228″ x 0.100″ Microstrip
0.076″ x 0.165″ Microstrip
0.289″ x 0.100″ Microstrip
0.083″ x 0.110″ Microstrip
0.375″ x 0.100″ Microstrip
0.185″ x 0.080″ Microstrip
0.079″ x 0.020″ Microstrip
0.185″ x 0.020″ Microstrip
0.185″ x 0.100″ Microstrip
0.093″ x 0.100″ Microstrip
0.063″ x 0.044″ Microstrip
0.103″ x 0.044″ Microstrip
0.080″ x 0.121″ Microstrip
Z32
Z33
Z34
Z35
Z36
Z37
Z38
Z39
Z40
Z41
Z42
Z43
Z44
Z45
PCB
0.080″ x 0.112″ Microstrip
0.193″ x 0.044″ Microstrip
0.080″ x 0.051″ Microstrip
0.157″ x 0.055″ Microstrip
0.080″ x 0.044″ Microstrip
0.080″ x 0.131″ Microstrip
0.040″ x 0.044″ Microstrip
0.073″ x 0.044″ Microstrip
0.574″ x 0.044″ Microstrip
L = 0.305″ wi = 0.150″ Angle = 130° Microstrip
0.523″ x 0.044″ Microstrip
0.574″ x 0.044″ Microstrip
L = 0.305″ wi = 0.150″ Angle = 130° Microstrip
0.523″ x 0.044″ Microstrip
Taconic TLX8--0300, 0.020″, εr = 2.55
Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
5
Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C13, C14
2.2 μF, 50 V Chip Capacitors
C3225X7R1H225M
TDK
C2, C3
10 μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C4, C5, C9, C10
2.2 pF Chip Capacitors
ATC100B2R2BT500XT
ATC
C6, C7
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C8
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C11
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C12
220 μF, 63 V Electrolytic Capacitor
222213668221
BC Components
C15, C16
4.7 μF, 50 V Chip Capacitors
C4532X5R1H475M
TDK
C17
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
R1, R2
1 kΩ, 1/8 W Chip Resistors
CRCW08051001FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
VD2
VD1
C12
C2
MW7IC3825N/NB
Rev. 7
C3
C4
C1
C6
C7 C17
C9
C13
C15
C14
CUT OUT AREA
C5
C8
C10
R1
VG1
R2
VG2
C16
VD1
R3
C11
Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
6
RF Device Data
Freescale Semiconductor
24.6
15
hD
Gps
24.4
14
24.2
PARC
24
23.8
23.6
--7
--45
--8
--46
IRL
ACPR
--44
--47
--48
23.4
23.2
3400
3425
3450
3475
3500
3525
3550
3575
--49
3600
--9
--10
--11
--12
0
--0.5
--1
--1.5
--2
PARC (dB)
Gps, POWER GAIN (dB)
24.8
IRL, INPUT RETURN LOSS (dB)
25
18
VDD = 28 Vdc, Pout = 5 W (Avg.), IDQ1 = 130 mA, IDQ2 = 230 mA
17
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
16
ACPR (dBc)
25.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.5
f, FREQUENCY (MHz)
25
24.8
1
hD
Gps
0
PARC
24.6
--54
--7
24.4
--55
--8
24.2
--56
24
IRL
--57
ACPR
23.8
23.6
3400
--58
3425
3450
3475
3500
3525
3550
3575
ACPR (dBc)
Gps, POWER GAIN (dB)
25.2
4
VDD = 28 Vdc, Pout = 20 dBm (Avg.), IDQ1 = 130 mA, IDQ2 = 230 mA
3
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth
2
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
--59
3600
--9
--10
--11
--12
--0
--0.5
--1
--1.5
--2
PARC (dB)
25.4
IRL, INPUT RETURN LOSS (dB)
25.6
ηD, DRAIN
EFFICIENCY (%)
Figure 5. WiMAX Broadband Performance @ Pout = 5 Watts Avg.
--2.5
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout = 20 dBm Avg.
26
IDQ2 = 350 mA
290 mA
25
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
25
26
VDD = 28 Vdc
IDQ1 = 130 mA
f = 3500 MHz
24
230 mA
23
175 mA
22
110 mA
24
20
160 mA
130 mA
23
100 mA
22
21
21
VDD = 28 Vdc
IDQ2 = 230 mA
f = 3500 MHz
IDQ1 = 195 mA
70 mA
20
1
10
100
1
10
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain versus Output Power
@ IDQ1 = 130 mA
Figure 8. Power Gain versus Output Power
@ IDQ2 = 230 mA
100
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
RF Device Data
Freescale Semiconductor
7
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
--10
VDD = 28 Vdc, Pout = 2 W (PEP), IDQ1 = 130 mA
IDQ2 = 230 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
--20
IM3--L
--30 IM3--U
IM5--L
--40
IM5--U
IM7--U
--50
IM7--L
--60
0.1
100
10
1
TWO--TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
23.5
23
22.5
PARC
--1
30
ηD
--1 dB = 6 W
--2
25
ACPR
--2 dB = 8.5 W
--3 dB = 11.5 W
--3
20
--4
--5
22
Gps
0
40
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA
f = 3500 MHz, OFDM 802.16d
35
64 QAM 3/4, 4 Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
1
9
5
13
17
21
--20
--25
--30
--35
ACPR (dBc)
24
1
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
24.5
PARC
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
25
--40
15
--45
10
--50
Pout, OUTPUT POWER (WATTS)
60
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA
f = 3500 MHz, OFDM 802.16d, 64 QAM 3/4
50 4 Bursts, 10 MHz Channel Bandwidth
25_C
Input Signal PAR = 9.5 dB @ 0.01%
Probability
on
CCDF
40
85_C
30
Gps
TC = --30_C
20
25_C
85_C
10
0
--20
--25
--30_C
--30_C
25_C
ηD
85_C
--35
--40
ACPR
1
--30
10
ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 10. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
--45
--50
100
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 11. WiMAX, ACPR, Power Gain and
Drain Efficiency versus Output Power
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
8
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
30
10
S21
5
108
15
0
10
--5
5
--10
S11
0
--15
--5
--20
--10
--25
--15
VDD = 28 Vdc
IDQ1 = 130 mA, IDQ2 = 230 mA
--20
--25
2400 2600
2800
3000
3200
3400 3600
3800
4000
2nd Stage
MTTF (HOURS)
20
S11 (dB)
25
S21 (dB)
109
15
107
106
1st Stage
105
--30
--35
104
--40
4200
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 5 W Avg., and PAE = 15%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100
--10
10
--20
--30
1
--40
0.1
(dB)
PROBABILITY (%)
Input Signal
0.01
OFDM 802.16d, 64 QAM 3/4, 4 Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0.001
0.0001
10 MHz
Channel BW
0
2
4
6
--50
--60
--70
8
PEAK--TO--AVERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
10
--80
--90
--20
ACPR in 1 MHz
Integrated BW
--15
--10
ACPR in 1 MHz
Integrated BW
--5
0
5
10
15
20
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
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Zo = 50 Ω
f = 3600 MHz
Zload
f = 3400 MHz
f = 3400 MHz
Zsource
f = 3600 MHz
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
3400
31.82 -- j19.29
4.58 -- j7.62
3425
32.86 -- j19.70
4.42 -- j7.33
3450
33.95 -- j20.93
4.22 -- j7.20
3475
35.11 -- j22.97
4.13 -- j7.22
3500
36.33 -- j25.82
4.13 -- j7.26
3525
37.61 -- j29.49
4.07 -- j7.20
3550
38.95 -- j33.97
3.81 -- j6.99
3575
40.35 -- j39.26
3.48 -- j6.77
3600
41.81 -- j45.37
3.21 -- j6.72
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
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Freescale Semiconductor
Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 230 mA, TA = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
3000
0.260
--47.0
7.550
--61.6
0.00485
--43.9
0.724
--87.7
3050
0.177
--63.4
8.610
--102.0
0.00423
--72.7
0.713
--113.0
3100
0.139
--68.0
10.000
--143.0
0.00424
--98.1
0.675
--141.0
3150
0.117
--59.6
11.300
177.0
0.00293
--122.0
0.612
--166.0
3200
0.190
--61.1
13.600
139.0
0.00322
--98.2
0.627
171.0
3250
0.283
--85.6
16.800
95.7
0.00533
--118.0
0.629
138.0
3300
0.395
--118.0
19.900
49.1
0.00762
--146.0
0.547
102.0
3350
0.493
--155.0
22.300
0.9
0.00950
--178.0
0.421
65.9
3400
0.575
166.0
24.000
--48.3
0.0116
148.0
0.235
23.1
3450
0.603
126.0
23.800
--99.4
0.0132
111.0
0.053
--130.0
3500
0.537
82.8
19.900
--155.0
0.0135
58.2
0.409
124.0
3550
0.479
56.7
15.600
165.0
0.00994
27.0
0.509
80.6
3600
0.458
29.8
12.900
128.0
0.00810
1.1
0.585
49.7
3650
0.465
1.3
11.200
94.1
0.00680
--19.7
0.637
21.3
3700
0.427
--27.1
9.830
58.3
0.00636
--42.4
0.672
--4.3
3750
0.429
--53.0
8.600
25.7
0.00546
--65.7
0.707
--28.9
3800
0.407
--81.6
7.770
--7.2
0.00476
--82.1
0.730
--53.8
3850
0.395
--110.0
7.020
--39.8
0.00445
--97.7
0.752
--77.2
3900
0.388
--139.0
6.380
--71.8
0.00421
--113.0
0.761
--102.0
3950
0.384
--167.0
5.900
--104.0
0.00454
--126.0
0.779
--125.0
4000
0.389
165.0
5.460
--135.0
0.00531
--145.0
0.779
--150.0
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Freescale Semiconductor
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ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53
53
50
49
Ideal
P3dB = 47.45 dBm (55.6 W)
51
52
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
52
P1dB = 46.66 dBm (46.3 W)
48
Actual
47
46
45
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA
Pulsed CW, 10 μsec(on), 10% Duty Cycle
f = 3400 MHz
44
43
16
17
18
19
20
21
22
23
24
25
26
27
51
Ideal
P3dB = 47.11 dBm (51.5 W)
50
49
P1dB = 46.13 dBm (41.0 W)
48
Actual
47
46
45
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA
Pulsed CW, 10 μsec(on), 10% Duty Cycle
f = 3600 MHz
44
28
43
18
19
20
Pin, INPUT POWER (dBm)
21
22
23
24
25
26
27
28
29
30
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
52.4 -- j42.5
3.5 -- j8.5
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 3400 MHz
P1dB
Zsource
Ω
Zload
Ω
126.6 -- j41.9
3.3 -- j8.3
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 3600 MHz
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Freescale Semiconductor
PACKAGE DIMENSIONS
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Freescale Semiconductor
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Freescale Semiconductor
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Freescale Semiconductor
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Freescale Semiconductor
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2008
• Initial Release of Data Sheet
1
Nov. 2010
• Corrected data sheet to remove “DC Block” from On--chip Matching feature bullet and replaced with
“RF Choke to Ground”, p. 1
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 3
• Added “RF Input Choke to Ground” circuitry to Functional Block Diagram and Test Circuit Schematic,
p. 1, 5
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 22
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RF Device Data
Freescale Semiconductor
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Document
Number:
RF
Device
Data MW7IC3825N
Rev. 1, 11/2010
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