MWIC930NR1,528

Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip integral matching circuitry makes it usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application • Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz) Power Gain — 30 dB Power Added Efficiency — 45% Driver Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 52 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VRD2 VRG2 VDS1 RFin VDS2/RFout VRD1 VRG1 VGS1 Quiescent Current Temperature Compensation VGS2 Figure 1. Functional Block Diagram MWIC930NR1 MWIC930GNR1 746 - 960 MHz, 30 W, 26 - 28 V SINGLE N - CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MWIC930NR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MWIC930GNR1 GND VRD2 VRG2 VDS1 VRD1 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/ VDS2 VRG1 VGS1 VGS2 NC GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MWIC930NR1 MWIC930GNR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RθJC °C/W GSM Application (Pout = 30 W CW) Stage 1, 26 Vdc, IDQ = 90 mA Stage 2, 26 Vdc, IDQ = 240 mA 5.9 1.4 GSM EDGE Application (Pout = 15 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 6.5 1.7 CDMA Application (Pout = 5 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 6.5 1.8 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 28 Power Added Efficiency PAE Input Return Loss (f = 880 MHz) IRL ACPR Adjacent Channel Power Ratio 31 — dB 18 21 — % — - 12 -9 dB — - 52 - 48 dBc Typical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 840 MHz