PBSS4032ND

PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 400 mA [1] Conditions open base Min - Typ 50 Max 30 3.5 6 75 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym014 Simplified outline Graphic symbol 1, 2, 5, 6 3. Ordering information Table 3. Ordering information Package Name PBSS4032ND SC-74 Description plastic surface-mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4. Marking codes Marking code ZF Type number PBSS4032ND 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current single pulse; tp ≤ 1 ms Conditions open emitter open base open collector Min Max 30 30 5 3.5 6 0.5 Unit V V V A A A PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 2 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation Conditions Tamb ≤ 25 °C [1] [2] [3] Min −55 −65 Max 480 750 1 150 +150 +150 Unit mW mW W °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 1200 Ptot (mW) 800 (1) 006aab931 (2) (3) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 3 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 260 160 125 45 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.1 10 0.02 0.01 1 0 0.05 0.5 006aab932 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 4 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 006aab933 duty cycle = 1 0.75 0.33 0.2 0.1 0.5 10 0.02 0.05 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 6 cm2 Fig 3. 103 Zth(j-a) (K/W) 102 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab934 duty cycle = 1 0.75 0.33 0.2 0.5 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 5 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions Min [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] Typ 500 460 400 200 100 70 110 155 180 180 200 50 0.78 0.98 0.79 23 25 48 140 65 205 135 Max 100 50 100 100 100 155 220 250 250 300 75 0.9 1.1 0.85 - Unit nA μA nA nA collector-base cut-off VCB = 30 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 °C collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = 24 V; VBE = 0 V VEB = 5 V; IC = 0 A VCE = 2 V; IC = 500 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 2 A VCE = 2 V; IC = 4 A VCE = 2 V; IC = 6 A ICES IEBO hFE 300 300 250 120 60 - VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 1 A; IB = 10 mA IC = 2 A; IB = 40 mA IC = 3 A; IB = 300 mA IC = 4 A; IB = 400 mA mV mV mV mV mV mV mΩ V V V ns ns ns ns ns ns MHz RCEsat VBEsat VBEon td tr ton ts tf toff fT collector-emitter IC = 4 A; IB = 400 mA saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz IC = 1 A; IB = 100 mA IC = 3 A; IB = 300 mA VCE = 2 V; IC = 2 A VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; IBoff = −0.05 A [1] [1] - Cc [1] collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz Pulse test: tp ≤ 300 μs; δ ≤ 0.02. - 44 - pF PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 6 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 800 hFE 600 (2) (1) 006aab935 7.0 IC (A) 6.0 5.0 4.0 006aab936 IB (mA) = 50 45 40 30 20 15 10 5 35 25 400 (3) 3.0 2.0 1.0 200 0 10−1 1 10 102 103 104 IC (mA) 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VCE (V) VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 5. DC current gain as a function of collector current; typical values 1.2 006aab937 Fig 6. Collector current as a function of collector-emitter voltage; typical values 1.4 006aab938 VBE (V) 0.8 (1) VBEsat (V) 1.0 (2) (1) (3) 0.4 0.6 (2) (3) 0.0 10−1 1 10 102 103 104 IC (mA) 0.2 10−1 1 10 102 103 104 IC (mA) VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 7 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 1 006aab939 1 006aab940 VCEsat (V) VCEsat (V) 10−1 (1) (2) (3) 10−1 (1) (2) (3) 10−2 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aab941 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 103 RCEsat (Ω) 102 006aab942 103 RCEsat (Ω) 102 10 10 (1) (1) 1 (2) 1 (2) 10−1 (3) 10−1 (3) 10−2 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 8 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 8. Test information IB 90 % input pulse (idealized waveform) IBon (100 %) 10 % IBoff IC 90 % output pulse (idealized waveform) IC (100 %) 10 % t td ton tr ts toff tf 006aaa003 Fig 13. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mlb826 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 9 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 5 4 0.6 0.2 1.1 0.9 3.0 2.5 1.7 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [1] [2] [3] [2] [3] Packing quantity 3000 10000 -135 -235 -115 -215 PBSS4032ND SOT457 For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 10 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 0.95 3.3 2.825 0.95 0.45 0.55 (6×) (6×) solder lands solder resist solder paste occupied area 0.7 (6×) 0.8 (6×) 2.4 Dimensions in mm sot457_fr Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.3 1.5 (4×) solder lands 1.475 5.05 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw 0.45 (2×) solder resist occupied area Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 11 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Release date 20100130 Data sheet status Product data sheet Change notice Supersedes Document ID PBSS4032ND_1 PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 12 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 13 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 January 2010 Document identifier: PBSS4032ND_1