PBSS5350D,135

SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits  Low collector-emitter saturation voltage VCEsat  High current capability  AEC-Q101 qualified  Smaller Printed-Circuit Board (PCB) area than for conventional transistors  High efficiency due to less heat generation 1.3 Applications  Supply line switching circuits  DC-to-DC conversion  Battery management applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -50 V IC collector current - - -3 A ICM peak collector current - - -5 A RCEsat collector-emitter saturation resistance - 120 150 mΩ IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 C collector 2 C collector 3 B base 4 E emitter 5 C collector 6 C collector Simplified outline 6 5 Graphic symbol 4 1, 2, 5, 6 3 1 2 3 SOT457 (TSOP6) 4 sym030 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5350D TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS5350D 53 PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 2 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -60 V VCEO collector-emitter voltage open base - -50 V open collector VEBO emitter-base voltage - -6 V IC collector current - -3 A ICM peak collector current - -5 A IBM peak base current Tamb ≤ 25 °C total power dissipation Ptot - -1 A [1] - 600 mW [2] - 750 mW [3] - 1200 mW - 150 °C Tj junction temperature Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on an FR4 4-layer PCB. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air pulsed; tp ≤ 50 ms; δ ≤ 0.5.; in free air Min Typ Max Unit [1] - - 208 K/W [2] - - 160 K/W [2] - - 100 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 3 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -50 V; IE = 0 A; Tj = 150 °C - - -50 µA nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 hFE DC current gain VCE = -2 V; IC = -500 mA; Tamb = 25 °C 200 - - VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 200 - - VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 100 - - IC = -500 mA; IB = -50 mA; Tamb = 25 °C - - -100 mV IC = -1 A; IB = -50 mA; Tamb = 25 °C - - -180 mV IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -300 mV - 120 150 mΩ - - -1.2 V VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -1.1 V fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 100 - - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 40 pF PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 4 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor mgw167 1000 006aac605 –1000 IB (nA) = –3.96 IC (mA) hFE –3.63 –3.30 –800 800 –2.97 –2.64 (1) –2.31 –600 600 –1.98 –1.65 (2) 400 –400 –1.32 –0.99 (3) 200 –0.66 –200 –0.33 0 −10−1 −1 −10 −102 0 0.0 −103 −104 IC (mA) VCE = -2 V –0.4 –0.8 –1.2 –1.6 –2.0 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 1. DC current gain as a function of collector current; typical values –5 IC (A) 006aac606 IB (mA) = –250 –225 –200 –3 –150 –125 –100 –75 Collector current as a function of collector-emitter voltage; typical values mgw168 −1.2 –175 –4 Fig 2. VBE (V) (1) −0.8 –50 (2) –25 –2 −0.4 (3) –1 0 0.0 –0.4 –0.8 –1.2 0 −10−1 –1.6 –2.0 VCE (V) −1 −10 −102 −103 −104 IC (mA) VCE = -2 V Tamb = 25 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 3. Collector current as a function of collector-emitter voltage; typical values PBSS5350D Product data sheet Fig 4. Base-emitter voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 5 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor mgw170 −1.4 VBEsat (V) −1.2 mgw169 −103 VCEsat (mV) −1.0 −102 (1) (1) −0.8 (2) (2) (3) −0.6 −10 (3) −0.4 −0.2 −10−1 Fig 5. −1 −10 −102 −1 −10−1 −103 −104 IC (mA) −1 −10 IC/IB = 10 IC/IB = 10 (1) Tamb = -55 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = -55 °C Base-emitter saturation voltage as a function of collector current; typical values Fig 6. −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values mgu390 103 RCEsat (Ω) 102 10 1 (1) 10−1 −10−1 (2) (3) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 7. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 6 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT457 Fig 8. JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Package outline SOT457 (TSOP6) PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 7 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 9. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 Fig 9. sot457_fr Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 10. Wave soldering footprint for SOT457 (TSOP6) PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 8 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5350D v.6 20110628 Product data sheet - PBSS5350D v.5 Modifications: • 5 “Limiting values”: Ptot conditions updated. PBSS5350D v.5 20110323 Product data sheet - PBSS5350D v.4 PBSS5350D v.4 20011113 Product specification - PBSS5350D v.3 PBSS5350D v.3 20010713 Product specification - PBSS5350D v.2 PBSS5350D v.2 20010126 Product specification - PBSS5350D v.1 PBSS5350D v.1 20000308 Product specification - - PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 9 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. PBSS5350D Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 10 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS5350D Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 11 of 12 PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 June 2011 Document identifier: PBSS5350D