PBSS5350Z
50 V, 3 A PNP low VCEsat (BISS) transistor
18 November 2019
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223
(SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350Z
2. Features and benefits
•
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
DC/DC converters
Supply line switching
Battery charger
LED backlighting
Linear voltage regulation (LDO)
Driver in low supply voltage applications, e.g. lamps, LEDs
Inductive load driver (for example relays, buzzers, motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-50
V
IC
collector current
-
-
-3
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
-5
A
RCEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; Tamb = 25 °C
-
120
150
mΩ
[1]
Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
[1]
PBSS5350Z
Nexperia
50 V, 3 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
B
base
2
C
collector
3
E
emitter
4
C
collector
Simplified outline
Graphic symbol
C
4
B
1
2
3
SC-73 (SOT223)
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
PBSS5350Z
Name
Description
Version
SC-73
plastic, surface-mounted package with increased heatsink; 4
leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
SOT223
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS5350Z
PB5350
PBSS5350Z
Product data sheet
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Nexperia
50 V, 3 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-60
V
VCEO
collector-emitter voltage
open base
-
-50
V
VEBO
emitter-base voltage
open collector
-
-6
V
IC
collector current
-
-3
A
ICM
peak collector current
-
-5
A
IBM
peak base current
-
-1
A
Ptot
total power dissipation
[1]
-
0.65
W
[2]
-
1
W
[3] [4]
-
1.35
W
[5]
-
2
W
single pulse; tp ≤ 1 ms
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
[4]
[5]
Device mounted on an FR4 Printed-Circuit Board (PCB), 35 µm single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, 35 µm single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, 35 µm single-sided copper, tin-plated, mounting pad for collector 6 cm .
2
Device mounted on an FR4 PCB, 70 μm single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated, mounting pad for collector 6 cm .
006aac674
1.5
(1)
Ptot
(W)
(2)
1.0
(3)
0.5
0.0
-75
-25
25
75
2
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig. 1.
Power derating curves
PBSS5350Z
Product data sheet
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50 V, 3 A PNP low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from in free air
junction to ambient
Rth(j-sp)
[1]
[2]
[3]
[4]
[5]
Conditions
Min
Typ
Max
Unit
[1]
-
-
192
K/W
[2]
-
-
125
K/W
[3] [4]
-
-
92
K/W
[5]
-
-
62.5
K/W
-
-
16
K/W
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, 35 μm single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, 35 μm single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, 35 μm single-sided copper, tin-plated, mounting pad for collector 6 cm .
2
Device mounted on an FR4 PCB, 70 μm single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated, mounting pad for collector 6 cm .
aaa-010994
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
10
0.1
0.02
1
0.5
0.2
0.05
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
103
FR4 PCB, 35 µm single-sided copper, tin-plated and standard footprint.
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-010995
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
10
0.1
0.02
1
0.5
0.2
0.05
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
102
10
2
tp (s)
103
FR4 PCB, 35 µm single-sided copper, tin-plated, mounting pad for collector 1 cm .
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5350Z
Product data sheet
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PBSS5350Z
Nexperia
50 V, 3 A PNP low VCEsat (BISS) transistor
aaa-010996
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
10
0.2
0.1
0.05
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
2
103
FR4 PCB, 35 µm single-sided copper, tin-plated, mounting pad for collector 6 cm .
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
breakdown voltage
IC = -100 µA; IE = 0 A
-60
-
-
V
V(BR)CEO
collector-emitter
breakdown voltage
IC = -10 mA; IB = 0 A
-50
-
-
V
V(BR)EBO
emitter-base
breakdown voltage
(collector open)
IE = -100 µA; IC = 0 A
-6
-
-
V
ICBO
collector-base cut-off
current
VCB = -50 V; IE = 0 A
-
-
-100
nA
VCB = -50 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A
-
-
-100
nA
hFE
DC current gain
VCE = -2 V; IC = -500 mA
200
-
-
VCEsat
collector-emitter
saturation voltage
VCE = -2 V; IC = -1 A
[1]
200
-
-
VCE = -2 V; IC = -2 A
[1]
100
-
-
IC = -500 mA; IB = -50 mA
-
-
-100
mV
IC = -1 A; IB = -50 mA
-
-
-180
mV
IC = -2 A; IB = -200 mA
[1]
-
-
-300
mV
IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1]
-
120
150
mΩ
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation IC = -2 A; IB = -200 mA
voltage
[1]
-
-
-1.2
V
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -1 A; Tamb = 25 °C
[1]
-
-
-1.1
V
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz
100
-
-
MHz
PBSS5350Z
Product data sheet
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PBSS5350Z
Nexperia
50 V, 3 A PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz
-
-
40
pF
[1]
Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
mgw167
1000
mgw168
- 1.2
hFE
VBE
(V)
800
(1)
(1)
- 0.8
600
(2)
(2)
400
- 0.4
(3)
200
0
- 10- 1
-1
- 10
- 102
0
- 10- 1
- 103
- 104
IC (mA)
VCE = -2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 5.
(3)
-1
mgw169
- 103
- 103
- 104
IC (mA)
Fig. 6.
Base-emitter voltage as a function of collector
current; typical values
mgw170
- 1.4
VBEsat
(V)
- 1.2
VCEsat
(mV)
- 102
- 1.0
(1)
(1)
- 0.8
(2)
(2)
(3)
- 0.6
- 10
(3)
- 0.4
-1
- 10
- 102
- 0.2
- 10- 1
- 103
- 104
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 7.
- 102
VCE = -2 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
DC current gain as a function of collector
current; typical values
-1
- 10- 1
- 10
Product data sheet
- 10
- 102
- 103
- 104
IC (mA)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS5350Z
-1
Fig. 8.
Base-emitter saturation voltage as a function of
collector current; typical values
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PBSS5350Z
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50 V, 3 A PNP low VCEsat (BISS) transistor
mgw171
- 1000
IC
(mA)
(1) (2) (3)
IC
(A)
(2)
(3)
(4)
- 800
mgw172
-5
(1)
(4)
(5)
(6)
(7)
-4
(8)
(5)
(6)
- 600
(9)
-3
(7)
(10)
(8)
(9)
- 400
-2
(10)
(11)
- 200
-1
(12)
0
0
- 0.4
- 0.8
- 1.2
0
- 1.6
-2
VCE (V)
Tamb = 25 °C
(1) IB = −3.96 mA
(2) IB = −3.63 mA
(3) IB = −3.30 mA
(4) IB = −2.97 mA
(5) IB = −2.64 mA
(6) IB = −2.31 mA
(7) IB = −1.98 mA
(8) IB = −1.65 mA
(9) IB = −1.32 mA
(10) IB = −0.99 mA
(11) IB = −0.66 mA
(12) IB = −0.33 mA
Fig. 9.
0
- 0.4
- 0.8
- 1.2
- 1.6
-2
VCE (V)
Tamb = 25 °C
(1) IB = −250 mA
(2) IB = −225 mA
(3) IB = −200 mA
(4) IB = −175 mA
(5) IB = −150 mA
(6) IB = −125 mA
(7) IB = −100 mA
(8) IB = −75 mA
(9) IB = −50 mA
(10) IB = −25 mA
Fig. 10. Collector current as a function of collectoremitter voltage; typical values
Collector current as a function of collectoremitter voltage; typical values
mgu390
103
RCEsat
(Ω)
102
10
1
(1)
10- 1
- 10- 1
(2)
(3)
-1
- 10
- 102
- 103
- 104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS5350Z
Product data sheet
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50 V, 3 A PNP low VCEsat (BISS) transistor
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
3
0.8
0.6
4.6
0.32
0.22
Dimensions in mm
04-11-10
Fig. 12. Package outline SC-73 (SOT223)
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 13. Reflow soldering footprint for SC-73 (SOT223)
PBSS5350Z
Product data sheet
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Nexperia
50 V, 3 A PNP low VCEsat (BISS) transistor
8.9
6.7
1.9
solder lands
4
solder resist
6.2
1
2
8.7
Dimensions in mm
3
1.9
(3×)
2.7
occupied area
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig. 14. Wave soldering footprint for SC-73 (SOT223)
PBSS5350Z
Product data sheet
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50 V, 3 A PNP low VCEsat (BISS) transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5350Z v.5
20191118
Product data sheet
-
PBSS5350Z v.4
Modifications:
•
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
PBSS5350Z v.4
20030513
Product data sheet
-
PBSS5350Z v.3
PBSS5350Z v.3
20030120
Product data sheet
-
PBSS5350Z v.2
PBSS5350Z v.2
20011113
Product data sheet
-
PBSS5350Z v.1
PBSS5350Z v.1
20010717
Product data sheet
-
-
PBSS5350Z
Product data sheet
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50 V, 3 A PNP low VCEsat (BISS) transistor
15. Legal information
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suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
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Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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PBSS5350Z
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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50 V, 3 A PNP low VCEsat (BISS) transistor
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 8
14. Revision history........................................................10
15. Legal information......................................................11
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Nexperia B.V. 2019. All rights reserved
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Date of release: 18 November 2019
PBSS5350Z
Product data sheet
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18 November 2019
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