PBSS5350Z

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – Linear voltage regulation (LDO). • Peripheral drivers – Driver in low supply voltage applications, e.g. lamps, LEDs – Inductive load driver, e.g. relays, buzzers, motors. DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z. 1 2 3 handbook, halfpage PBSS5350Z QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 base collector emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −3 −5