TFF11142HN
Low phase noise LO generator for VSAT applications
Rev. 1 — 28 March 2013
Product data sheet
1. General description
The TFF11142HN is a Ku band frequency generator intended for low phase noise Local
Oscillator (LO) circuits for Ku band VSAT transmitters and transceivers. The specified
phase noise complies with IESS-308 from Intelsat.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
2. Features and benefits
Phase noise compliant with IESS-308 (Intelsat) in combination with appropriate source
LO generator with VCO range from 14.13 GHz to 14.42 GHz
Input signal 55 MHz to 901 MHz
Divider settings 16, 32, 64, 128 or 256
Output level 6 dBm; stability 2 dB
Third or fourth order PLL
Internally stabilized voltage references for loop filter
3. Applications
VSAT up converters
Local oscillator signal generation
4. Quick reference data
Table 1.
Quick reference data
Operating conditions of Table 10 apply.
Symbol
Parameter
Min
Typ Max
Unit
VCC
supply voltage
Conditions
3.0
3.3
V
ICC
supply current
-
100 130
fo(RF)
RF output frequency
14.13 -
n(synth)
synthesizer phase noise
divider value = 64; at 100 kHz offset; reference
phase noise is 149 dBc/Hz at 100 kHz offset
-
97 92
dBc/Hz
RLout
output return loss
measured at demo board and de-embedded to
footprint
-
10 -
dB
-
-
sup(sp)ref reference spurious suppression measured at divider value = 256
3.6
mA
14.42 GHz
70
dBc
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
5. Ordering information
Table 2.
Ordering information
Type number
Package
TFF11142HN
Name
Description
Version
HVQFN24
plastic thermal enhanced very thin quad flat package;
no leads; 24 terminals; body 4 4 0.85 mm
SOT616-1
6. Marking
Table 3.
Marking codes
Type number
Marking code
TFF11142HN
T142
7. Block diagram
NSL0
NSL1
NSL2
4
5
6
VTUNE
CPOUT
3
VREGVCO
2
1
10 pF
100 kΩ
pull up
LCKDET
7
100 kΩ
pull up
100 kΩ
pull up
30 pF
VCC(DIV)
(3.3 V)
lock: 2.5 V
no lock: 0 V
WINDOW
DETECTOR
2.7 V
24
GND3(BUF)
100 kΩ
pull down
GND1(REF)
IN(REF)_P
8
23
VCC(BUF)
VCO
9
PFD
CP
RBUF_N
50 Ω
RBUF_P
50 Ω
22
VTUNE
CPOUT
BUF2_P
BUF1_P
DIVIDER
IN(REF)_N
GND2(REF)
VCC(REF)
21
10
NSL0
NSL1
NSL2
20
11
12
19
13
VCC(DIV)
Fig 1.
14
15
GND(DIV)
n.c.
16
n.c.
17
BUF2_N
BUF1_N
GND2(BUF)
18
GND1(BUF) VCC(BUF)
001aal724
Block diagram
TFF11142HN
Product data sheet
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Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
2 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
8. Functional diagram
NSL0
NSL1
NSL2
VTUNE
4
5
6
CPOUT
3
VREGVCO
2 10 pF
1
30 pF
LCKDET
GND1(REF)
IN(REF)_P
7
lock: 2.5 V
no lock: 0 V
LOCK
DETECTOR
2.7 V
24
23
8
VCO
9
PFD
CP
VTUNE
CPOUT
OUTPUT
BUFFER
22
GND3(BUF)
BUF2_P
BUF1_P
DIVIDER
IN(REF)_N
10
21
NSL0
NSL1
NSL2
PLL
GND2(REF)
VCC(REF)
20
11
12
19
14
13
VCC(DIV)
Fig 2.
TFF11142HN
Product data sheet
GND(DIV)
15
n.c.
16
n.c.
17
BUF2_N
BUF1_N
GND2(BUF)
18
GND1(BUF) VCC(BUF)
001aal725
Functional diagram
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Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
3 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
9. Pinning information
19 GND2(BUF)
20 BUF1_N
21 BUF2_N
22 BUF1_P
terminal 1
index area
23 BUF2_P
24 GND3(BUF)
9.1 Pinning
14 GND(DIV)
NSL2
6
13 VCC(DIV)
VCC(REF) 12
5
GND2(REF) 11
15 n.c.
NSL1
IN(REF)_N 10
16 n.c.
4
9
3
NSL0
IN(REF)_P
VTUNE
8
18 VCC(BUF)
17 GND1(BUF)
7
2
LCKDET
1
CPOUT
GND1(REF)
VREGVCO
001aal726
Transparent top view
Fig 3.
Pin configuration for HVQFN24
9.2 Pin description
Table 4.
Symbol
Pin description
Pin Description
VREGVCO
1
Regulated output voltage for VCO loop filter. Connect loop filter to this pin.
CPOUT
2
Charge pump output.
VTUNE
3
Tuning voltage for VCO.
NSL0
4
Divider setting, LSB. Leave open for “1”, connect to GND for “0”. See Table 8.
NSL1
5
Divider setting. Leave open for “1”, connect to GND for “0”. See Table 8.
NSL2
6
Divider setting, MSB. Leave open for “1”, connect to GND for “0”. See Table 8.
LCKDET
7
Lock detect. Lock = 2.5 V; out of lock = 0 V. See Table 6.
GND1(REF) 8
Ground for REF input. Connect this pin to the exposed diepad landing.
IN(REF)_P
9
Reference signal, non-inverting input. Couple this AC to the source.
IN(REF)_N
10
Reference signal, inverting input. Couple this AC to the source.
GND2(REF) 11
VCC(REF)
12
Supply of the internal regulated voltages. Decouple this pin against
GND2(REF) (pin 11).
VCC(DIV)
13
Supply of the divider and PFD/CP. Decouple this pin against GND(DIV)
(pin 14).
GND(DIV)
14
Ground of the divider. Connect this pin to the exposed diepad landing.
n.c.
15
not connected
n.c.
16
not connected
GND1(BUF) 17
TFF11142HN
Product data sheet
Ground for REF input. Connect this pin to the exposed diepad landing.
Ground for RF output. Connect this pin to the exposed diepad landing.
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Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
4 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Table 4.
Pin description …continued
Symbol
Pin Description
VCC(BUF)
18
Supply voltage for the RF output buffer. Decouple this pin against GND2(BUF)
(pin 19).
GND2(BUF) 19
Ground for RF output. Connect this pin to the exposed diepad landing.
BUF1_N
20
RF output.
BUF2_N
21
RF output.
BUF1_P
22
RF output.
BUF2_P
23
RF output.
GND3(BUF) 24
Ground for RF output. Connect this pin to the exposed diepad landing.
10. Functional description
The TFF11142HN consists of the following blocks:
•
•
•
•
•
PLL
Output buffer
Lock detector
Reference input
Divider settings
The functionality of the blocks will be discussed below.
10.1 PLL
The PLL is formed by the VCO, DIVIDER (possible settings: 16, 32, 64, 128 and 256
(see Table 8)) and a PFD/CP. The tune voltage is referred to the band gap regulated
voltage: VREGVCO (pin 1).
The loop filter can be set to type 2 or type 3. If a type 2 filter is used, the pins
CPOUT (pin 2) and VTUNE (pin 3) must be interconnected. A 10 pF capacitor is placed
internally between pins CPOUT (pin 2) and VREGVCO (pin 1), and a 30 pF capacitor is
placed between pins VTUNE (pin 3) and VREGVCO (pin 1). See Figure 4 and Figure 5.
Values for the loop filter components are given in Table 5.
The VCO input voltage range is between 0.1 and 0.9 VO(reg)VCO.
TFF11142HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
5 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
C2
C1
R1
C2
C1
R1
R2
C3
VTUNE
3
CPOUT
2
VREGVCO
1
VTUNE
3
CPOUT
2
10 pF
VREGVCO
1
10 pF
30 pF
30 pF
2.7 V
2.7 V
001aal728
001aal727
Fig 4.
Type 2 loop filter
Table 5.
Fig 5.
Type 3 loop filter
Component values used for characterization
fi(ref)
Divider value
C1
(nF)
(pF)
(pF)
()
()
55.195 to 56.328
256
27
82
33
470
560
110.391 to 112.656
128
18
82
33
330
560
220.781 to 225.313
64
18
120
33
270
560
441.563 to 450.625
32
33
270
33
120
560
883.125 to 901.250
16
68
560
33
68
560
(MHz)
C2
C3
R1
R2
10.2 Output buffer
The output consists of a differential pair with 50 collector resistors RBUF_P and RBUF_N. If
only one output is used, terminate the non used output with the same impedance as the
load (see Figure 8)
10.3 Lock detector
The lock detector is the output of a window detector. The window detector compares the
output voltage over the charge pump. This voltage is identical to VTUNE when a
type 2 loop filter is used (see Figure 4). In case of a type 3 loop filter this voltage is filtered
by R2/C3 (see Figure 5). Due to this filtering the attack and decay time will decrease.
The lower window detector threshold voltage is 7 % of the output voltage on
VREGVCO (pin 1), the upper window detector threshold voltage is 93 % of the output
voltage on VREGVCO (pin 1). The hysteresis is 0.1 V. The output is 2.5 V CMOS
compliant. The values are shown in Table 6. The timing diagram is shown in Figure 6.
At start-up the LCKDET (pin 7) will be LOW until the circuit has acquired lock.
TFF11142HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
6 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Table 6.
Logical value and physical value for lock detect (LCKDET)
Logical value
Physical value
Lock detect state
0
0V
out of lock
1
2.5 V
lock
LCKDET (pin 7) has a pull-down resistor of 100 k to GND1(REF) (pin 8).
IN(REF)_P/N(t)
t
upper window detector threshold
(93% of VO(reg)VCO)
hysteresis voltage (0.1 V)
VTUNE(t)
low window detector threshold
(7% of VO(reg)VCO)
hysteresis voltage (0.1 V)
t
IN LOCK
2.2 V
LCKDET(t)
0.4 V
OUT OF LOCK (0 V)
t
timeline section
1
2
3
4
attack time(1)
value determined
by closed loop
opertation PLL
VTUNE
actual PLL status
PLL is in lock
LCKDET > 2.2 V
remarks
Drift to maximum
voltage = lowest
frequency of
VCO
undetermined
behavior around
maximum
voltage
6
decay time(1)
undetermined
behavior around
maximum
voltage
PLL is out of lock PLL is out of lock PLL is out of lock
LCKDET
remains > 2.2 V
because loop
filter is still
charged
5
voltage is forced
by loop to closed
loop value of
PLL
value is determined by
closed loop operation
PLL
PLL is in lock
PLL is in lock
window detector LCKDET < 0.4 V window detector
detects that
detects that
VTUNE < upper
VTUNE > upper
window detector
window detector
threshold − 0.1 V.
threshold.
LCKDET changes
LCKDET changes
from < 0.4 V to
from > 2.2 V to
> 2.2 V during the
< 0.4 V during the
decay time
attack time
LCKDET > 2.2 V
001aal986
(1) The attack time and decay time are typically 10 s and are mainly depending on the drift of the VCO tuning voltage.
Fig 6.
Timing diagram lock detector
10.4 Reference input (IN(REF)_P, IN(REF)_N)
The reference input is a differential pair and is internally biased. The input is high ohmic.
The input signal must be AC coupled. If used in a single ended mode, the not used input
must be terminated with the same impedance as the driving source.
An example of the differential source and two single ended loads are shown in Figure 7.
An example of a single ended application is shown in Figure 8.
TFF11142HN
Product data sheet
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Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
7 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Note that the phase noise of the output signal is also determined by the phase noise of the
reference signal. The reference frequency range is equal to the
output frequency / division value. Note that the output frequency is guaranteed from
8.20 GHz to 8.60 GHz.
10.5 Divider settings (NSL2, NSL1, NSL0)
The divider can be set to 16, 32, 64, 128 and 256 (See Table 8). The logic levels for
NSL0 (pin 4), NSL1 (pin 5) and NSL2 (pin 6) are given in Table 7.
The pins have a pull-up resistor of 100 k to VCC(DIV) (pin 13).
The device is only guaranteed when NSL2, NSL1 and NSL0 are predefined at start-up (no
change of divider value is allowed during operation).
Table 7.
Logical and physical value for divider setting (NSL2, NSL1, NSL0)
Logical value
Physical value
0
GND
1
open or VCC
The truth table is shown in Table 8.
Table 8.
Divider setting as function of NSL2, NSL1 and NSL0
Setting number
NSL2
NSL1
NSL0
Divider value
0
0
0
0
16
1
0
0
1
32
2
0
1
0
64
3
0
1
1
128
4
1
0
0
256
5
1
0
1
[1]
6
1
1
0
[1]
7
1
1
1
[1]
[1]
Test mode, divider output will be disabled.
11. Limiting values
Table 9.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VI
TFF11142HN
Product data sheet
input voltage
Conditions
Min
on pin NSL0
0.5 +5
V
on pin NSL1
0.5 +5
V
on pin NSL2
0.5 +5
V
on pin IN(REF)_P
0.5 +5
V
on pin IN(REF)_N
0.5 +5
V
on pin VCC(REF)
0.5 +5
V
on pin VCC(DIV)
0.5 +5
V
on pin VCC(BUF)
0.5 +5
V
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Rev. 1 — 28 March 2013
Max
Unit
© NXP B.V. 2013. All rights reserved.
8 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Table 9.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Pi
on pin IN(REF)_P
4
+10
dBm
on pin IN(REF)_N
4
+10
dBm
input power
Tj
junction temperature
40
+125 C
Tstg
storage temperature
40
+125 C
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard
22-A114E
-
2.5
kV
Charged Device Model (CDM);
According to JEDEC standard
22-C101B
-
1
kV
12. Recommended operating conditions
Table 10. Operating conditions
NSL0 (pin 4), NSL1 (pin 5) and NSL2 (pin 6) not changed during operation.
Loop filter component values as depicted in Table 5 are used.
Symbol Parameter
Conditions
Tamb
ambient temperature
Z0
characteristic impedance
n(ref)
reference phase noise
Min Typ Max
Unit
40 +25 +85
C
-
50
-
divider value = 16
[1]
-
-
134 dBc/Hz
divider value = 32
[1]
-
-
143 dBc/Hz
divider value = 64
[1]
-
-
149 dBc/Hz
divider value = 128
[1]
-
-
150 dBc/Hz
divider value = 256
[1]
-
-
151 dBc/Hz
-
901
MHz
0
dBm
fi(ref)
reference input frequency fi(ref) = fo(RF) / divider value
55
Pi(ref)
reference input power
10 -
[1]
Required reference phase noise is set 10 dB below equivalent input phase noise.
13. Thermal characteristics
TFF11142HN
Product data sheet
Table 11.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
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Rev. 1 — 28 March 2013
Typ
Unit
25
K/W
© NXP B.V. 2013. All rights reserved.
9 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
14. Characteristics
Table 12. Characteristics
Operating conditions of Table 10 apply.
Symbol
Parameter
VCC
ICC
Conditions
Min
Typ
Max
Unit
supply voltage
3.0
3.3
3.6
V
supply current
-
100
130
mA
fo(RF)
RF output frequency
14.13
-
14.42
GHz
VO(reg)VCO
VCO regulator output voltage
2.5
2.7
2.9
V
Icp
charge pump current
-
1
-
mA
KO
VCO steepness
-
0.76
-
GHz/V
n(VCO)
VCO phase noise
at 10 MHz offset
-
130 -
dBc/Hz
n(synth)
synthesizer phase noise
divider value = 64; at 100 kHz
offset; reference phase noise is
149 dBc/Hz at 100 kHz offset
-
97
92
dBc/Hz
8
-
4
dBm
PLL
[1]
Output buffer
[2]
Po
output power
measured single ended
RLout
output return loss
measured at demo board and
de-embedded to footprint
-
10
-
dB
sup(sp)ref
reference spurious suppression
measured at divider value = 256
-
-
70
dBc
H(LO)
LO harmonic rejection
-
10
-
dBc
Lock detector
VOL
LOW-level output voltage
IO = 1 mA
-
-
0.4
V
VOH
HIGH-level output voltage
IO = 1 mA
2.2
-
-
V
Rpd
pull-down resistance
70
100
130
k
Divider setting (NSL0, NSL1, NSL2)
Rpu
pull-up resistance
70
100
130
k
VIL
LOW-level input voltage
-
-
0.8
V
VIH
HIGH-level input voltage
2.0
-
-
V
[1]
The typical ratio of the maximum KO in relation to the minimum KO is 1.25.
[2]
Output stage is a differential pair with 50 collector impedances.
Output power is measured per output pin for the fundamental tone only.
Output is DC coupled and is AC coupled in on-board.
TFF11142HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
10 of 17
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R1
1 nF
GND = 0
open or 3.3 V = 1
NSL2
6
NSL1
5
R2
C3
NSL0
4
VTUNE
3
CPOUT
2
VREGVCO
1
10 pF
100 kΩ
pull up
LCKDET 7
100 kΩ
pull up
30 pF
VCC(DIV)
(3.3 V)
lock: 2.5 V
no lock: 0 V
WINDOW
DETECTOR
2.7 V
24 GND3(BUF)
100 kΩ
pull down
GND1(REF) 8
23 BUF2_P
VCC(BUF)
1 pF
10 nF
50 Ω
VCO
IN(REF)_P 9
Z0(dif) = 100 Ω
PFD
CP
CPOUT
RBUF_N
50 Ω
Z0 = 50 Ω
RBUF_P
50 Ω
22 BUF1_P
VTUNE
50 Ω
DC block
50 Ω
LOAD
100 Ω DC block
50 Ω
10 nF
DIVIDER
IN(REF)_N 10
21 BUF2_N
NSL0
NSL1
NSL2
REFERENCE
SOURCE
1 pF
GND2(REF) 11
20 BUF1_N
Z0 = 50 Ω
50 Ω
50 Ω
LOAD
3.3 V
VCC(REF) 12
19
14
15
16
17
GND(DIV)
n.c.
n.c.
GND1(BUF) VCC(BUF)
18
11 of 17
© NXP B.V. 2013. All rights reserved.
001aal730
Fig 7.
Application diagram with differential source for IN(REF) and both outputs driving a load, loop filter is type 3
TFF11142HN
13
VCC(DIV)
GND2(BUF)
Low phase noise LO generator for VSAT applications
Rev. 1 — 28 March 2013
All information provided in this document is subject to legal disclaimers.
OUT-OF-LOCK
PROCESSING
BLOCK
100 kΩ
pull up
NXP Semiconductors
15. Application information
TFF11142HN
Product data sheet
C2
C1
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NXP Semiconductors
TFF11142HN
Product data sheet
C2
C1
R1
1 nF
GND = 0
open or 3.3 V = 1
NSL2
6
NSL1
5
R2
C3
NSL0
4
VTUNE
3
CPOUT
2
VREGVCO
1
10 pF
100 kΩ
pull up
LCKDET 7
100 kΩ
pull up
30 pF
VCC(DIV)
(3.3 V)
lock: 2.5 V
no lock: 0 V
WINDOW
DETECTOR
2.7 V
24 GND3(BUF)
100 kΩ
pull down
GND1(REF) 8
23 BUF2_P
VCC(BUF)
1 pF
50 Ω
Z0 = 50 Ω
10 nF
VCO
IN(REF)_P 9
PFD
CP
CPOUT
RBUF_N
50 Ω
Z0 = 50 Ω
RBUF_P
50 Ω
22 BUF1_P
VTUNE
50 Ω
DC block
51 Ω
10 nF
REFERENCE
SOURCE
not used input
terminated with
same impedance
DIVIDER
IN(REF)_N 10
21 BUF2_N
NSL0
NSL1
NSL2
24 Ω
1 pF
GND2(REF) 11
3.3 V
50 Ω
LOAD
DC block
20 BUF1_N
VCC(REF) 12
19
14
15
16
17
GND(DIV)
n.c.
n.c.
GND1(BUF) VCC(BUF)
not used output
terminated with
same impedance
GND2(BUF)
18
12 of 17
© NXP B.V. 2013. All rights reserved.
001aal731
Fig 8.
Application diagram with single ended source for IN(REF) and single ended load, loop filter is type 3
TFF11142HN
13
VCC(DIV)
51 Ω
Low phase noise LO generator for VSAT applications
Rev. 1 — 28 March 2013
All information provided in this document is subject to legal disclaimers.
OUT-OF-LOCK
PROCESSING
BLOCK
100 kΩ
pull up
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
16. Package outline
HVQFN24: plastic thermal enhanced very thin quad flat package; no leads;
24 terminals; body 4 x 4 x 0.85 mm
A
B
D
SOT616-1
terminal 1
index area
A
A1
E
c
detail X
e1
C
1/2
e
e
7
12
y
y1 C
v M C A B
w M C
b
L
13
6
e
e2
Eh
1/2
1
e
18
terminal 1
index area
24
19
X
Dh
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max.
A1
b
c
D (1)
Dh
E (1)
Eh
e
e1
e2
L
v
w
y
y1
mm
1
0.05
0.00
0.30
0.18
0.2
4.1
3.9
2.25
1.95
4.1
3.9
2.25
1.95
0.5
2.5
2.5
0.5
0.3
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
Fig 9.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT616-1
---
MO-220
---
EUROPEAN
PROJECTION
ISSUE DATE
01-08-08
02-10-22
Package outline SOT616-1 (HVQFN24)
TFF11142HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
13 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
17. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CMOS
Complementary Metal Oxide Semiconductor
CP
Charge Pump
Ku band
K-under band
LSB
Least Significant Bit
MSB
Most Significant Bit
PFD
Phase Frequency Detector
PLL
Phase-Locked Loop
VCO
Voltage Controlled Oscillator
VSAT
Very Small Aperture Terminal
18. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TFF11142HN v.1
20130328
Product data sheet
-
-
TFF11142HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
14 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
TFF11142HN
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
15 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
TFF11142HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 March 2013
© NXP B.V. 2013. All rights reserved.
16 of 17
TFF11142HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
21. Contents
1
2
3
4
5
6
7
8
9
9.1
9.2
10
10.1
10.2
10.3
10.4
10.5
11
12
13
14
15
16
17
18
19
19.1
19.2
19.3
19.4
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Output buffer. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Lock detector . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Reference input (IN(REF)_P, IN(REF)_N) . . . . 7
Divider settings (NSL2, NSL1, NSL0). . . . . . . . 8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Recommended operating conditions. . . . . . . . 9
Thermal characteristics . . . . . . . . . . . . . . . . . . 9
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 10
Application information. . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 March 2013
Document identifier: TFF11142HN
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