2N2089RLRE

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N5088 2N5089 Collector − Base Voltage 2N5088 2N5089 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 35 30 3.0 50 625 5.0 1.5 12 −55 to +150 Vdc mAdc mW mW/°C W mW/°C °C Symbol VCEO 30 25 Vdc TO−92 CASE 29 STYLE 1 Value Unit Vdc 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM 2N 508x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. x = 8 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5088G 2N2088RLRAG 2N5089G 2N2089RLRE *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 Shipping † 5000 Units/Bulk 2000/Tape & Reel 5000 Units/Bulk 2000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N5088/D 1 March, 2007 − Rev. 4 2N5088, 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base −Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2N5088 2N5089 NF 2N5088 2N5089 − − 3.0 2.0 fT Ccb Ceb hfe 350 450 1400 1800 dB 50 − − − 4.0 10 MHz pF pF − hFE 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 300 400 350 450 300 400 − − 900 1200 − − − − 0.5 0.8 Vdc Vdc − V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO − − 50 100 − − 50 50 nAdc 35 30 − − nAdc 30 25 − − Vdc Vdc Symbol Min Max Unit RS en in IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 2N5088, 2N5089 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA en , NOISE VOLTAGE (nV) RS ≈ 0 20 RS ≈ 0 f = 10 Hz 100 Hz 10 kHz 5.0 30 BANDWIDTH = 1.0 Hz 10 7.0 5.0 10 7.0 1.0 kHz 300 mA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 kHz 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS ≈ 0 10 20 10 mA 50 100 200 3.0 mA 1.0 mA 300 mA 100 mA 30 mA 0 10 20 20 16 Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA NF, NOISE FIGURE (dB) BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 100 mA 4.0 10 mA IC = 1.0 mA 8.0 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 mA 3.0 mA 1.0 mA 300 mA 30 mA 10 mA IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0 Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 mA 100 mA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 30 mA 10 mA 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure http://onsemi.com 3 2N5088, 2N5089 h FE , DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 −55 °C Figure 8. DC Current Gain 1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE−EMITTER TEMPERATURE COEFFICIENT (mV/°C) TJ = 25°C −0.4 −0.8 0.6 VBE @ VCE = 5.0 V −1.2 TJ = 25°C to 125°C 0.4 −1.6 0.2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 −2.0 −55 °C to 25°C 20 50 100 50 100 −2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C 500 300 200 f T, CURRENT−GAIN 100 70 50 1.0 VCE = 5.0 V TJ = 25°C 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current−Gain — Bandwidth Product http://onsemi.com 4 2N5088, 2N5089 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X−X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X−X N 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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