2N5460G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain − Gate Voltage VDG 40 Vdc Reverse Gate − Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ −65 to +135 °C Storage Channel Temperature Range Tstg −65 to +150 °C 3 GATE 1 SOURCE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−92 CASE 29 STYLE 7 12 3 MARKING DIAGRAM 2N 546x AYWWG G 2N546x = Device Code x = 0, 1, or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 5 1 Publication Order Number: 2N5460/D 2N5460, 2N5461, 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit 40 − − Vdc 2N5460, 2N5461, 2N5462 − − 5.0 nAdc 2N5460, 2N5461, 2N5462 − − 1.0 mAdc 0.75 1.0 1.8 − − − 6.0 7.5 9.0 Vdc 0.5 0.8 1.5 − − − 4.0 4.5 6.0 Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = 10 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100°C) (VGS = 30 Vdc, VDS = 0, TA = 100°C) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS Gate −Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 mAdc) 2N5460 2N5461 2N5462 Gate −Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) 2N5460 2N5461 2N5462 VGS(off) VGS Vdc ON CHARACTERISTICS Zero −Gate −Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS −1.0 −2.0 −4.0 − − − −5.0 −9.0 −16 mAdc 2N5460 2N5461 2N5462 ⎪yfs⎪ 1000 1500 2000 − − − 4000 5000 6000 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yos⎪ − − 75 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − 1.0 2.0 pF en − 60 115 nVń ǸHz SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) FUNCTIONAL CHARACTERISTICS Equivalent Short−Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) ORDERING INFORMATION Device 2N5460 2N5460G 2N5461 2N5461G 2N5461RLRA 2N5461RLRAG 2N5462 2N5462G Package Shipping† TO−92 TO−92 (Pb−Free) TO−92 1000 Units / Box TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 TO−92 (Pb−Free) 1000 Units / Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N5460, 2N5461, 2N5462 4.0 VDS = 15 V 3.5 I D, DRAIN CURRENT (mA) FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 3.0 2.5 TA = −55°C 2.0 25°C 1.5 125°C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE−SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE (m mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 0.3 10 I D, DRAIN CURRENT (mA) VDS = 15 V 8.0 TA = −55°C 7.0 6.0 25°C 125°C 5.0 4.0 3.0 2.0 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) 3.5 4.0 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 12 TA = −55°C 10 8.0 25°C 125°C 6.0 4.0 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10000 VDS = 15 V 14 1.0 Figure 5. VGS(off) = 4.0 V 7.0 Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 16 I D, DRAIN CURRENT (mA) 4.0 7000 Figure 2. VGS(off) = 4.0 V 0 3.0 10000 9.0 0 2.0 Figure 4. VGS(off) = 2.0 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 1. VGS(off) = 2.0 V 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) Figure 6. VGS(off) = 5.0 V Figure 3. VGS(off) = 5.0 V http://onsemi.com 3 5.0 7.0 10 2N5460, 2N5461, 2N5462 10 VDS = 15 V f = 1.0 kHz 8.0 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 C, CAPACITANCE (pF) 200 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 300 Coss 1.0 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 0 10 Crss 0 Figure 7. Output Resistance versus Drain Current 10 20 30 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 8. Capacitance versus Drain−Source Voltage 10 9.0 NF, NOISE FIGURE (dB) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Source Resistance COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz vi Crss Ciss ross Coss | yfs | vi yis = jW Ciss yos = jW Cosp * + 1/ross yfs = yfs | yrs = −jW Crss *Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 10. Equivalent Low Frequency Circuit http://onsemi.com 4 40 2N5460, 2N5461, 2N5462 PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 For additional information, please contact your local Sales Representative. 2N5460/D