2N5460
2N5461
2N5462
SILICON
P-CHANNEL JFETS
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The CENTRAL SEMICONDUCTOR 2N5460, 2N5461,
and 2N5462 are silicon P-Channel JFETs designed for
low level amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Gate Voltage
Reverse Gate-Source Voltage
SYMBOL
VDG
VGSR
Continuous Gate Current
Power Dissipation
Operating and Storage Junction Temperature
IG
PD
TJ, Tstg
UNITS
V
40
40
V
10
mA
310
mW
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5460
2N5461
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
IGSS
VGS=20V
5.0
5.0
IGSS
VGS=20V, TA=100°C
1.0
1.0
2N5462
MIN MAX
5.0
IDSS
-
1.0
μA
5.0
2.0
9.0
4.0
16
mA
40
-
40
-
40
-
V
0.5
4.0
-
-
-
-
V
-
-
0.8
4.5
-
-
V
-
-
-
-
1.5
6.0
V
0.75
6.0
1.0
7.5
1.8
9.0
V
1.0K
4.0K
1.5K
5.0K
2.0K
6.0K
μS
VDS=15V, f=1.0kHz
IG=10μA
1.0
VGS
VDS=15V, ID=0.1mA
VDS=15V, ID=0.2mA
VGS
VDS=15V, ID=0.4mA
VGS(OFF)
VDS=15V, ID=1.0μA
VDS=15V, VGS=0, f=1.0kHz
BVGSS
VGS
|yfs|
|yos|
Crss
Ciss
eN
NF
UNITS
nA
VDS=15V, VGS=0, f=1.0kHz
VDS=15V, VGS=0, f=1.0MHz
-
75
-
75
-
75
μS
-
2.0
-
2.0
-
2.0
pF
VDS=15V,
VDS=15V,
-
7.0
-
7.0
-
7.0
pF
-
115
-
115
-
115
nV/ Hz
-
2.5
-
2.5
-
2.5
dB
VGS=0, f=1.0MHz
VGS=0, f=100Hz, BW=1.0Hz
VDS=15V, VGS=0, f=100Hz,
RG=1.0MΩ, BW=1.0Hz
R1 (25-January 2016)
2N5460
2N5461
2N5462
SILICON
P-CHANNEL JFETS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Drain
2) Source
3) Gate
MARKING:
FULL PART NUMBER
R1 (25-January 2016)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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Corporate Headquarters & Customer Support Team
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Hauppauge, NY 11788 USA
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Main Fax: (631) 435-1824
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www.centralsemi.com
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