2N5551TA

2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Package Top Mark Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L Tape and Reel 2N5551TF 5551 TO-92 3L Tape and Reel 2N5551BU 5551 TO-92 3L Bulk MMBT5551 3S SOT-23 3L Tape and Reel Note: 1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V) © 2009 Semiconductor Components Industries, LLC., 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 1 2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V 600 mA -55 to +150 °C IC TJ, Tstg(3) Collector current - Continuous Junction and Storage Temperature Notes: 2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 3. These ratings are based on a maximum junction temperature of 150 °C. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal Characteristics(4) Values are at TA = 25°C unless otherwise noted. Symbol Maximum Parameter Units 2N5551 MMBT5551 Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD °C/W 357 °C/W Note: 4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 2 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Absolute Maximum Ratings(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V IE = 10 μA, IC = 0 6.0 V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current VCB = 120 V, IE = 0 50 nA VCB = 120 V, IE = 0, TA = 100°C 50 μA VEB = 4.0 V, IC = 0 50 nA On Characteristics hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 80 IC = 10 mA, VCE = 5.0 V 80 IC = 50 mA, VCE = 5.0 V 30 250 IC = 10 mA, IB = 1.0 mA 0.15 V IC = 50 mA, IB = 5.0 mA 0.20 V IC = 10 mA, IB = 1.0 mA 1.0 V IC = 50 mA, IB = 5.0 mA 1.0 V Small-Signal Characteristics Current Gain Bandwidth Product IC = 10 mA, VCE = 10 V, f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 6.0 pF Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 20 pF Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz Noise Figure IC = 250 μA, VCE= 5.0 V, RS=1.0 kΩ, f=10 Hz to 15.7 kHz fT NF 100 50 MHz 250 8.0 dB Note: 5. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2.0%. © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 3 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Electrical Characteristics(5) o 125 C VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V] 250 VCE=5V o 100 C hFE- DC CURRENT GAIN 200 o 75 C 150 o 25 C 100 o -40 C 50 0 1 10 100 1000 10 ? 10 β 1 o 0.1 o 0.01 1 10 100 IC- COLLECTOR CURRENT [mA] Figure 1. Typical Pulsed Current Gain vs. Collector Current Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current 1.0 1.2 VBE(ON)- BASE-EMITTER VOLTAGE [V] VBE(SAT)- BASE-EMITTER VOLTAGE [V] 75 C o 25 C o -40 C IC- COLLECTOR CURRENT [mA] β-40oC 0.8 o 25 C 0.6 o 125 C o 100 C o 75 C 0.4 0.2 125 C o 100 C 1 10 100 o TA = -40 C 1.0 o TA = 25 C 0.8 0.6 o TA = 75 C o 0.4 TA = 100 C o TA = 125 C 0.2 0.0 1 10 IC- COLLECTOR CURRENT [mA] 100 1000 IC- COLLECTOR CURRENT [mA] Figure 3. Base-Emitter Saturation Voltage vs. Collector Current Figure 4. Base-Emitter On Voltage vs. Collector Current 100 VCB = 100V CAPACITANCE [pF] I CBO- COLLE CTOR CURRENT (nA) 50 10 10 CIB COB 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 1 125 1 2 3 4 5 6 7 8 9 10 Ω REVERSE BIAS VOLTAGE [V] Figure 5. Collector Cut-Off Current vs. Ambient Temperature Figure 6. Input and Output Capacitance vs. Reverse Voltage © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 0 www.onsemi.com 4 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Typical Performance Characteristics h FE - SMALL SIGNAL CURRENT GAIN BV CER - BREAKDOWN VOLTAGE (V) Between Emitter-Base 260 I C = 1.0 mA 240 220 200 180 160 0.1 1 10 100 1000 RESISTANCE (kΩ ) Figure 7. Collector- Emitter Breakdown Voltage with Resistance between Emitter-Base vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 1 10 I C - COLLECTOR CURRENT (mA) 50 Figure 8. Small Signal Current Gain vs. Collector Current PD - POWER DISSIPATION (mW) 700 600 500 TO-92 400 SOT-23 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 9. Power Dissipation vs. Ambient Temperature © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 5 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Physical Dimensions TO-92 (Bulk) D Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor's products. © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 6 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Physical Dimensions (Continued) TO-92 (Tape and Reel, Ammo) D Figure 11. 3-LEAD, TO92, MOLDED, 0.200 IN-LINE SPACING LD FORM(J62Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor's products. © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 7 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Physical Dimensions (Continued) SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor's products. © 2009 Semiconductor Components Industries, LLC. 2N5551 / MMBT5551 Rev. 2 www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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