2N5551-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR  2N Z  z Equivalent Circuit 1 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH Z=Rank of h FE ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 1 72 %XON 1000pcs/Bag 17$ 72 7DSH 2000pcs/Box  MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V V EBO Emitter-Base Voltage 6 V IC Collector Current 0.6 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200  /W Tj Junction Temperature 150  T stg Storage Temperature R ș JA www.cj-elec.com -55~+150  1  (,$XJ,201    Ta =25  unless otherwise specified Parameter Symbol Collector-base breakdown voltage Test V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO conditions Min Typ Max Unit IC=100μA,IE=0 180 V IC=1mA,IB=0 160 V IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA hFE(1) VCE=5V, IC=1mA 80 hFE(2) VCE=5V, IC=10mA 80 hFE(3) VCE=5V, IC=50mA 50 VCE(sat)˄1˅ IC=10mA,IB=1mA 0.15 V VCE(sat)˄2˅ IC=50mA,IB=5mA 0.2 V VBE (sat)˄1˅ IC=10mA,IB=1mA 1 V VBE (sat)˄2˅ IC=50mA,IB=5mA 1 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 6 pF Emitter input capacitance Cib VBE=0.5V,IC=0, f=1MHz 20 pF Transition frequency fT VCE=10V,IC=10mA, f=100MHz 300 MHz 100 *Pulse test: pulse width 300s, duty cycle 2.0%. CLASSIFICATION OF hFE(2) RANK RANGE 80-100 A B C 100-150 150-200 200-300  www.cj-elec.com ($XJ Typical Characteristics Static Characteristic 18 80uA 60uA 50uA 9 40uA 6 30uA 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 10 10 12 (V) IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.6 Ta=100ć 0.4 10 COLLECTOR CURRENT VBE 200 —— 100 IC 100 200 Ta=100ć Ta=25ć 1 10 COLLECTOR CURRENT Cob / Cib 100 —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 C Ta=100ć Ta=25ć Cib (pF) IC (mA) 200 IC COMMON EMITTER VCE=5V 100 100 (mA) =10 (mA) IC IC 0.1 0.01 200 CAPACITANCE BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25ć 1 10 VCEsat —— 0.3 0.8 0.2 0.1 1 COLLECTOR CURRENT =10 COLLECTOR CURRENT Ta=25ć 100 IB=20uA 3 0 Ta=100ć hFE 70uA 12 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25ć DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 90uA 15 hFE —— IC 500 Ta=25ć 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT 150 —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 IC 1 REVERSE VOLTAGE PC 750 —— V (V) 10 20 Ta VCE=10V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25ć 100 50 1 COLLECTOR CURRENT www.cj-elec.com 10 3 IC 20 625 500 375 250 125 0 30 0 25 50 75 AMBIENT TEMPERATURE (mA)  100 Ta 125 150 (ć ) ($XJ $%&'(")*$+  A A1 b c D D1 E e e1 L  h ! "#     3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 $%&'+**,(, + ZZZFMHOHFFRP ($XJ $%&'7DSHDQG5HHO ZZZFMHOHFFRP ($XJ