2N7008

2N7008 Small−Signal Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS …are designed for high voltage, high speed applications such as switching regulators, converters, solenoid, and relay drivers. • Silicon Gate for Fast Switching Speeds • Relay Driver • Telecommunication Switch • Automatic Insertable • Available in Ammo Pack • Available on Radial Tape and Reel • N−Channel, Small Signal, TMOS FET http://onsemi.com N−CHANNEL SMALL SIGNAL TMOS FET, RDS(ON) = 7.5
, 60 V D G MAXIMUM RATINGS Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 1 m
) VDGR 60 Vdc VGS 40 Vdc ID 150 1000 Gate−to−Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage temperature Range S MARKING DIAGRAM mAdc IDM PD 400 3.2 mW mW/°C TJ, Tstg −5.5 to +150 °C RJA 312.5 °C/W TL 300 °C TO−92 (TO−226) CASE 29 THERMAL CHARACTERISTIC Thermal Resistance Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 in from Case for 10 Seconds  Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 0 1 Publication Order Number: 2N7008/D 2N7008 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit V(BR)DSS 60 − Vdc − − 1.0 500 − −100 − − − − 7.5 13.5 − − 1.5 3.75 ID(ON) 500 − mA gFS 80 − mhos CISS − 50 pF COSS − 25 CRSS − 5 tON − 20 tOFF − 20 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) (VDS = 50 V, VGS = 0, TJ = 125°C) IDSS Gate−to−Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) IGSSF Adc nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mA) VGS(th) Static Drain−to−Source On−Resistance (VGS = 5 Vdc, ID = 50 mAdc) (VGS = 10 Vdc, ID = 500 mA, TC = 125°C) RDS(ON) Drain−to−Source On−Voltage (VGS = 5 V, ID = 50 mA) (VGS = 10 V, ID = 500 mA) VDS(ON) On−State Drain Current (VGS = 10 V, VDS  2 VDS(ON)) Forward Transconductance (VDS  2 VDS(ON), ID = 200 mA) Vdc
Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 f = 1 MHz Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) Turn−on Delay Time Turn−off Delay Time VDD = 30 V, ID = 200 mA RGEN = 25
, RL = 150
1. Pulse Test Pulse Width
300 s, Duty Cycle
2%. http://onsemi.com 2 ns 2N7008 http://onsemi.com 3 2N7008 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. 2N7008/D