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2SD1626-TD-E

2SD1626-TD-E

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO-243AA

  • 描述:

    TRANSISTOR

  • 数据手册
  • 价格&库存
2SD1626-TD-E 数据手册
2SB1126 / 2SD1626 2SB1126 / 2SD1626 Ordering number : EN1721B PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • • • High DC current gain (4000 or greater). Large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)80 V (--)50 V (--)10 V Collector Current VEBO IC (--)1.5 A Collector Current (Pulse) ICP Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm2✕0.8mm) (--)3 A 500 mW 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions typ max Unit VCB=(--)40V, IE=0A (--)100 nA VEB=(--)8V, IC=0A (--)100 nA Marking 2SB1126 : BI 2SD1626 : DI © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: 2SB1126_2SD1626/D 2SB1126 / 2SD1626 Continued from preceding page. Parameter Symbol hFE1 DC Current Gain min VCE=(--)2V, IC=(--)500mA VCE=(--)2V, IC=(--)10mA hFE2 Gain-Bandwidth Product fT Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitterr Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)500mA, IB=(--)0.5mA IC=(--)10µA, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO V(BR)EBO IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A Emitter-to-Base Breakdown Voltage Ratings Conditions typ Unit max 4000 3000 VCE=(--)10V, IC=(--)50mA IC=(--)500mA, IB=(--)0.5mA 120 MHz (--)0.9 (--)1.5 (--)1.5 (--)2.0 (--)80 V V V (--)50 V (--)10 V Package Dimensions unit : mm (typ) 7007B-004 IC -- VCE --1.6 IC -- VCE 1.6 2SB1126 A 8m 0 --0. --1.2 6mA --0.0 --1.0 A --0.04m --0.8 --0.02mA --0.6 --0.4 2SD1626 A m 8 .0 1.4 Collector Current, IC -- A Collector Current, IC -- A --1.4 0 mA 0.06 1.2 1.0 0.04mA 0.8 0.6 0.02mA 0.4 0.2 --0.2 IB=0mA 0 0 --2 --4 --6 --8 --10 Collector-to-Emitter Voltage, VCE -- V IB=0mA 0 --12 0 ITR08937 Rev.0 I Page 2 of 4 I www.onsemi.com 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V 12 ITR08938 2SB1126 / 2SD1626 hFE -- IC 5 10 7 DC Current Gain, hFE 3 2 4 10 2 4 10 7 5 5 2 3 5 7 --0.1 2 3 5 3 0.01 7 --1.0 2 ITR08939 Collector Current, IC -- A 2SB1126 IC / IB=1000 2 --10 7 5 3 2 --1.0 2 3 5 7 2 0.1 3 5 7 2 1.0 ITR08940 Collector Current, IC -- A VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 7 VCE(sat) -- IC 3 2SD1626 IC / IB=1000 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 5 3 --0.01 10 7 5 3 2 1.0 7 7 5 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 ITR08941 5 2 --10 7 5 3 2 --1.0 2 3 5 7 0.1 2 3 5 7 1.0 2 ITR08942 VBE(sat) -- IC 3 2SD1626 IC / IB=1000 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SB1126 IC / IB=1000 7 0.01 Collector Current, IC -- A VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SD1626 VCE=2V 7 5 7 10 7 5 3 2 1.0 7 5 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 ITR08943 5 2 3 5 7 2 0.1 3 5 7 2 1.0 ITR08944 PC -- Ta 1.8 2SB1126 / 2SD1626 ICP=3A 3 7 0.01 Collector Current, IC -- A ASO 5 2SB1126 / 2SD1626 1.6 s 1m ms 10 s 0m 10 1.0 7 5 DC 3 Collector Dissipation, PC -- W IC=1.5A 2 Collector Current, IC -- A hFE -- IC 5 10 2SB1126 VCE= --2V op era 2 tio n 0.1 7 5 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d( 25 0.6 No h 0.4 0m eat s ink m2 ✕ 0.8 m 3 For PNP, minus sign is omitted 2 5 7 1.0 2 3 5 7 10 m ) 0.2 0 2 3 Collector-to-Emitter Voltage, VCE -- 5 7 100 V ITR08946 0 Rev.0 I Page 3 of 4 I www.onsemi.com 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08945 2SB1126 / 2SD1626 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. % !" "& '  " "                          !"# $%     & !!'" "'-  )  * "  #$&www.onsemi.com $%+          & & !'#'"#  !!'((' ! )  * $%+   . & ("  #-! "-! *& !'#'"#  !!'((' # )  * $%+    !  ! & ,   . & ''##' ! Rev.0 I Page 4 of 4 I www.onsemi.com " & ./&++000  +  *        /    1     2/   2SB1126_2SD1626/D
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