2SB1126 / 2SD1626
2SB1126 / 2SD1626
Ordering number : EN1721B
PNP / NPN Epitaxial Planar Silicon Transistors
For Various Drivers
Applications
•
Relay drivers, hammer drivers, lamp drivers, motor drivers.
Features
•
•
•
High DC current gain (4000 or greater).
Large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SB1126
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)80
V
(--)50
V
(--)10
V
Collector Current
VEBO
IC
(--)1.5
A
Collector Current (Pulse)
ICP
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Mounted on a ceramic board (250mm2✕0.8mm)
(--)3
A
500
mW
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
typ
max
Unit
VCB=(--)40V, IE=0A
(--)100
nA
VEB=(--)8V, IC=0A
(--)100
nA
Marking 2SB1126 : BI
2SD1626 : DI
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Ratings
min
Continued on next page.
www.onsemi.com
Rev.0 I Page
1 of 4 I www.onsemi.com
Publication Order Number:
2SB1126_2SD1626/D
2SB1126 / 2SD1626
Continued from preceding page.
Parameter
Symbol
hFE1
DC Current Gain
min
VCE=(--)2V, IC=(--)500mA
VCE=(--)2V, IC=(--)10mA
hFE2
Gain-Bandwidth Product
fT
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitterr Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)500mA, IB=(--)0.5mA
IC=(--)10µA, IE=0A
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
V(BR)EBO
IC=(--)1mA, RBE=∞
IE=(--)10µA, IC=0A
Emitter-to-Base Breakdown Voltage
Ratings
Conditions
typ
Unit
max
4000
3000
VCE=(--)10V, IC=(--)50mA
IC=(--)500mA, IB=(--)0.5mA
120
MHz
(--)0.9
(--)1.5
(--)1.5
(--)2.0
(--)80
V
V
V
(--)50
V
(--)10
V
Package Dimensions
unit : mm (typ)
7007B-004
IC -- VCE
--1.6
IC -- VCE
1.6
2SB1126
A
8m
0
--0.
--1.2
6mA
--0.0
--1.0
A
--0.04m
--0.8
--0.02mA
--0.6
--0.4
2SD1626
A
m
8
.0
1.4
Collector Current, IC -- A
Collector Current, IC -- A
--1.4
0
mA
0.06
1.2
1.0
0.04mA
0.8
0.6
0.02mA
0.4
0.2
--0.2
IB=0mA
0
0
--2
--4
--6
--8
--10
Collector-to-Emitter Voltage, VCE -- V
IB=0mA
0
--12
0
ITR08937
Rev.0 I Page 2 of 4 I www.onsemi.com
2
4
6
8
10
Collector-to-Emitter Voltage, VCE -- V
12
ITR08938
2SB1126 / 2SD1626
hFE -- IC
5
10
7
DC Current Gain, hFE
3
2
4
10
2
4
10
7
5
5
2
3
5
7 --0.1
2
3
5
3
0.01
7 --1.0
2
ITR08939
Collector Current, IC -- A
2SB1126
IC / IB=1000
2
--10
7
5
3
2
--1.0
2
3
5
7
2
0.1
3
5
7
2
1.0
ITR08940
Collector Current, IC -- A
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
7
VCE(sat) -- IC
3
2SD1626
IC / IB=1000
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
5
3
--0.01
10
7
5
3
2
1.0
7
7
5
5
5
7 --0.01
2
3
5
7 --0.1
2
3
5
Collector Current, IC -- A
7 --1.0
2
ITR08941
5
2
--10
7
5
3
2
--1.0
2
3
5
7 0.1
2
3
5
7 1.0
2
ITR08942
VBE(sat) -- IC
3
2SD1626
IC / IB=1000
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1126
IC / IB=1000
7 0.01
Collector Current, IC -- A
VBE(sat) -- IC
3
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SD1626
VCE=2V
7
5
7
10
7
5
3
2
1.0
7
5
5
5
7 --0.01
2
3
5
7 --0.1
2
3
5
Collector Current, IC -- A
7 --1.0
2
ITR08943
5
2
3
5
7
2
0.1
3
5
7
2
1.0
ITR08944
PC -- Ta
1.8
2SB1126 / 2SD1626
ICP=3A
3
7 0.01
Collector Current, IC -- A
ASO
5
2SB1126 / 2SD1626
1.6
s
1m
ms
10
s
0m
10
1.0
7
5
DC
3
Collector Dissipation, PC -- W
IC=1.5A
2
Collector Current, IC -- A
hFE -- IC
5
10
2SB1126
VCE= --2V
op
era
2
tio
n
0.1
7
5
M
ou
1.4
nt
1.2
ed
on
ac
er
1.0
am
ic
bo
ar
0.8
d(
25
0.6
No h
0.4
0m
eat s
ink
m2
✕
0.8
m
3
For PNP, minus sign is omitted
2
5
7
1.0
2
3
5
7
10
m
)
0.2
0
2
3
Collector-to-Emitter Voltage, VCE --
5
7 100
V ITR08946
0
Rev.0 I Page 3 of 4 I www.onsemi.com
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08945
2SB1126 / 2SD1626
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply
high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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2SB1126_2SD1626/D