ADP3110KRZ

Dual Bootstrapped, 12 V MOSFET Driver with Output Disable ADP3110 FEATURES All-in-one synchronous buck driver Bootstrapped high-side drive One PWM signal generates both drives Anticross-conduction protection circuitry Output disable control turns off both MOSFETs to float output per Intel® VRM 10 specification GENERAL DESCRIPTION The ADP3110 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 30 ns transition time. One of the drivers can be bootstrapped and is designed to handle the high voltage slew rate associated with floating high-side gate drivers. The ADP3110 includes overlapping drive protection to prevent shoot-through current in the external MOSFETs. The OD pin shuts off both the high-side and the low-side MOSFETs to prevent rapid output capacitor discharge during system shutdown. The ADP3110 is specified over the commercial temperature range of 0°C to 85°C and is available in an 8-lead SOIC_N package. APPLICATIONS Multiphase desktop CPU supplies Single-supply synchronous buck converters SIMPLIFIED FUNCTIONAL BLOCK DIAGRAM 12V VCC 4 D1 ADP3110 BST 1 CBST2 CBST1 IN 2 8 DRVH RG Q1 RBST DELAY TO INDUCTOR SW 7 CMP VCC 6 CMP 1V CONTROL LOGIC DRVL 5 Q2 DELAY OD 3 PGND 05514-001 6 Figure 1. ©2010 SCILLC. All rights reserved. May 2010 – Rev. 2 Publication Order Number: ADP3110/D ADP3110 TABLE OF CONTENTS Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ............................. 5 Timing Characteristics..................................................................... 6 Theory of Operation ........................................................................ 7 Low-Side Driver............................................................................ 7 High-Side Driver .......................................................................... 7 Overlap Protection Circuit...........................................................7 Application Information ...................................................................8 Supply Capacitor Selection ..........................................................8 Bootstrap Circuit ...........................................................................8 MOSFET Selection ........................................................................8 PC Board Layout Considerations................................................9 Outline Dimensions ........................................................................11 Ordering Guide ...........................................................................11 Rev. 2 | Page 2 of 11 | www.onsemi.com ADP3110 SPECIFICATIONS VCC = 12 V, BST = 4 V to 26 V, TA = 25°C, unless otherwise noted. Table 1.1 Parameter PWM INPUT Input Voltage High2 Input Voltage Low2 Input Current2 Hysteresis2 OD INPUT Input Voltage High2 Input Voltage Low2 Input Current 2 Hysteresis2 Propagation Delay Times3 2.0 −1 90 0.8 +1 250 20 40 35 55 V V µA mV ns ns Symbol Conditions Min 2.0 −1 90 0.8 +1 250 Typ Max Unit V V µA mV tpdlOD tpdhOD See Figure 3 See Figure 3 HIGH-SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Output Resistance, Unbiased Transition Times Propagation Delay Times3 SW Pull Down Resistance LOW-SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Output Resistance, Unbiased Transition Times Propagation Delay Times3 Time-out Delay SUPPLY Supply Voltage Range2 Supply Current2 UVLO Voltage2 Hysteresis2 1 RDRV + SW trDRVH tfDRVH tpdhDRVH tpdlDRVH RSW − PGND BST to SW = 12 V BST to SW = 12 V BST to SW = 0 V BST to SW = 12 V, CLOAD = 3 nF, see Figure 4 BST to SW = 12 V, CLOAD = 3 nF, see Figure 4 BST to SW = 12 V, CLOAD = 3 nF,see Figure 4 BST to SW = 12 V, CLOAD = 3 nF, see Figure 4 SW to PGND 3.8 1.4 10 40 30 45 25 10 3.4 1.4 10 40 20 15 30 190 150 4.4 1.8 55 45 65 35 Ω Ω kΩ ns ns ns ns kΩ Ω Ω kΩ ns ns ns ns ns ns V mA V mV RDRVL − PGND trDRVL tfDRVL tpdhDRVL tpdlDRVL VCC = PGND CLOAD = 3 nF, see Figure 4 CLOAD = 3 nF, see Figure 4 CLOAD = 3 nF, see Figure 4 CLOAD = 3 nF, see Figure 4 SW = 5 V SW = PGND 4.0 1.8 50 30 35 40 110 95 4.15 VCC ISYS BST = 12 V, IN = 0 V VCC rising 2 1.5 350 13.2 5 3.0 All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods. 2 Specifications apply over the full operating temperature range TA = 0°C to 85°C. 3 For propagation delays, tpdh refers to the specified signal going high, and tpdl refers to it going low. Rev. 2 | Page 3 of 11 | www.onsemi.com ADP3110 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter VCC BST BST to SW SW DC