ATP216-TL-H

Ordering number : EN8985A ATP216 N-Channel Power MOSFET http://onsemi.com 50V, 35A, 23mΩ, Single ATPAK Features • • • ON-resistance RDS(on)1=17mΩ(typ.) 1.8V drive Protection diode in Slim package Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 50 PW≤10μs, duty cycle≤1% V 35 A 105 A 40 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 40 mJ 17.5 Avalanche Current *2 Tc=25°C V ±10 A Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP216-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP216 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62012 TKIM/51111PA TKIM TC-00002591 No.8985-1/7 ATP216 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ Unit max 50 ID=1mA, VGS=0V VDS=50V, VGS=0V V 1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=18A 58 RDS(on)1 RDS(on)2 ID=18A, VGS=4.5V ID=9A, VGS=2.5V 17 23 mΩ Static Drain-to-Source On-State Resistance 20 28 mΩ RDS(on)3 ID=5A, VGS=1.8V 30 45 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 0.4 1.4 2700 VDS=20V, f=1MHz V S pF 150 pF Crss 110 pF Turn-ON Delay Time td(on) 27 ns Rise Time tr 90 ns Turn-OFF Delay Time td(off) 220 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=30V, VGS=4.5V, ID=35A 105 ns 30 nC 5.9 nC 7.9 IS=35A, VGS=0V 0.96 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=30V VIN ID=18A RL=1.67Ω VIN D PW=10μs D.C.≤1% VOUT G ATP216 P.G 50Ω S Ordering Information Device ATP216-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.8985-2/7 ATP216 ID -- VDS 35 V 4.5 2.5 45 2.0V 10 1.8V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 5 0 1.0 9A 40 18A 30 20 10 0 0 1 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V VDS=10V 2 = Tc -- °C 75 10 7 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A SW Time -- ID 1000 7 5 VDD=30V VGS=4.5V td(off) 3 tf tr td(on) 3 2 10 7 5 --40 --20 0 20 40 60 80 100 120 140 160 IT16433 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 10000 7 5 1.2 IT16435 f=1MHz Ciss 2 1000 7 5 3 2 Coss 100 7 5 Crss 3 3 2 1.0 0.1 10 3 2 100 7 5 20 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 7 100 IT16434 3.0 IT16431 =5A V, I D 8 . 1 = VGS =9A V, I D 5 . =2 A V GS =18 , ID V 5 =4. VGS 30 0.01 7 5 3 2 0.001 2 1.0 0.1 40 100 7 5 3 2 °C 25 3 2.5 Case Temperature, Tc -- °C °C 25 5 2.0 50 0 --60 8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 1.5 RDS(on) -- Tc IT16432 | yfs | -- ID 100 1.0 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=5A 0.5 Gate-to-Source Voltage, VGS -- V Tc=25°C 50 0 IT16430 RDS(on) -- VGS 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 10 VGS=1.5V 0 15 --2 5°C 0 20 5°C 25° C --25 °C 5 25 25° C 15 30 Tc= 75° C Drain Current, ID -- A 20 35 Tc= 7 6.0 V 25 40 V 5 3. 8.0 Drain Current, ID -- A V 3.0 VDS=10V V 30 ID -- VGS 50 V Tc=25°C 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16436 10 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT16437 No.8985-3/7 ATP216 VGS -- Qg 4 3 2 1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Tc 30 30 25 20 15 10 5 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16440 0μ s s 10 DC Operation in this area is limited by RDS(on). 10 μs 1m s ms op era tio n Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT16439 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 35 0 10 0m 10 7 5 3 2 1.0 7 5 3 2 10 ID=35A IT16438 40 0 IDP=105A (PW≤10μs) 100 7 5 3 2 0.1 0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 ASO 1000 7 5 3 2 VDS=30V ID=35A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 5 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16441 No.8985-4/7 ATP216 Taping Specification ATP216-TL-H No.8985-5/7 ATP216 Outline Drawing ATP216-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.8985-6/7 ATP216 Note on usage : Since the ATP216 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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