ATP216

Ordering number : EN8985 ATP216 SANYO Semiconductors DATA SHEET ATP216 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • ON-resistance RDS(on)1=17mΩ(typ.) 1.8V drive Slim package Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.5 Unit V V A A W °C °C mJ A Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 4.6 2.6 0.4 Packing Type: TL Marking ATP216 4 4.6 6.05 LOT No. TL 7.3 9.5 Electrical Connection 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 2,4 0.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 1 0.1 3 http://semicon.sanyo.com/en/network 51111PA TKIM TC-00002591 No.8985-1/4 ATP216 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=18A ID=18A, VGS=4.5V ID=9A, VGS=2.5V ID=5A, VGS=1.8V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=4.5V, ID=35A VDS=30V, VGS=4.5V, ID=35A VDS=30V, VGS=4.5V, ID=35A IS=35A, VGS=0V Ratings min 50 1 ±10 0.4 58 17 20 30 2700 150 110 27 90 220 105 30 5.9 7.9 0.96 1.2 23 28 45 1.4 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 4.5V 0V VIN VDD=30V VIN PW=10μs D.C.≤1% G D ID=18A RL=1.67Ω VOUT ATP216 P.G 50Ω S 35 30 ID -- VDS 4.5 Tc=25°C 6.0 V 50 ID -- VGS VDS=10V V 3.0 V 2.5 V 45 40 Drain Current, ID -- A 8.0 V 25 20 15 10 Drain Current, ID -- A 3. 5V 35 30 25 20 15 10 2.0V 1.8V 5 0 5 1.0 0 0 0.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.5 --2 5°C 2.0 VGS=1.5V 25° C Tc= 75° C 2.5 3.0 IT16431 Drain-to-Source Voltage, VDS -- V IT16430 Gate-to-Source Voltage, VGS -- V No.8985-2/4 ATP216 60 RDS(on) -- VGS Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=5A 9A 18A 60 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 50 40 40 30 30 20 20 10 10 =5A , ID 1.8V = VGS =9A , ID .5V =2 A V GS =18 , ID .5V =4 VGS 0 0 1 2 3 4 5 6 7 8 IT16432 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 100 | yfs | -- ID °C 25 -- Case Temperature, Tc -- °C 100 7 5 3 2 IS -- VSD IT16433 Forward Transfer Admittance, | yfs | -- S 7 5 3 2 VDS=10V VGS=0V = Tc °C 75 Source Current, IS -- A °C 25 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 5 7 100 IT16434 0.01 7 5 3 2 0.001 0 0.2 Tc= 75 0.4 °C 25° C --25 °C 0.6 10 0.8 1.0 1.2 IT16435 SW Time -- ID td(off) tf VDD=30V VGS=4.5V 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 tr td(on) Ciss, Coss, Crss -- pF Coss Crss 2 3 5 7 10 2 3 Drain Current, ID -- A 5 VGS -- Qg 5 7 100 IT16436 10 0 10 20 30 40 50 IT16437 Drain-to-Source Voltage, VDS -- V 1000 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=35A Drain Current, ID -- A 4 3 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=105A (PW≤10μs) ID=35A 10 10 0m s DC op 10 μs 0μ s 1m 10 era s ms n 2 1 Operation in this area is limited by RDS(on). Tc=25°C Single pulse 2 3 5 7 1.0 2 3 tio 0 0 5 10 15 20 25 30 IT16438 0.1 0.1 5 7 10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT16439 No.8985-3/4 ATP216 45 PD -- Tc Avalanche Energy derating factor -- % 120 EAS -- Ta Allowable Power Dissipation, PD -- W 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT16441 Case Temperature, Tc -- °C IT16440 Ambient Temperature, Ta -- °C Note on usage : Since the ATP216 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2011. Specifications and information herein are subject to change without notice. PS No.8985-4/4