BC547BRL1G

DATA SHEET www.onsemi.com Amplifier Transistors COLLECTOR 1 NPN Silicon BC546B, BC547A, B, C, BC548B, C 2 BASE 3 EMITTER Features • Pb−Free Packages are Available* TO−92 CASE 29 STYLE 17 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC546 BC547 BC548 BC546 BC547 BC548 Emitter - Base Voltage VCEO VCBO Value Unit Vdc 65 45 30 3 STRAIGHT LEAD 2 3 BENT LEAD TAPE & REEL Vdc 80 50 30 MARKING DIAGRAM VEBO 6.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 12 THERMAL CHARACTERISTICS Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BC 54xy AYWW G G x y A Y WW G = 6, 7, or 8 = A, B or C = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 August, 2021 − Rev. 8 1 Publication Order Number: BC546/D BC546B, BC547A, B, C, BC548B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 65 45 30 − − − − − − 80 50 30 − − − − − − 6.0 6.0 6.0 − − − − − − − − − − 0.2 0.2 0.2 − 15 15 15 4.0 − − − 90 150 270 − − − Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 Collector − Base Breakdown Voltage (IC = 100 mAdc) BC546 BC547 BC548 Emitter − Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO V(BR)CBO V(BR)EBO ICES V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC547A BC546B/547B/548B BC548C hFE (IC = 2.0 mA, VCE = 5.0 V) BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C 110 110 110 110 200 420 − − − 180 290 520 450 800 800 220 450 800 (IC = 100 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C − − − 120 180 300 − − − − − − 0.09 0.2 0.3 0.25 0.6 0.6 − 0.7 − 0.55 − − − 0.7 0.77 150 150 150 300 300 300 − − − Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) VCE(sat) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) Base − Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 BC547 BC548 fT MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo − 1.7 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo − 10 − pF 125 125 125 240 450 − − 220 330 600 500 900 260 500 900 − − − 2.0 2.0 2.0 10 10 10 Small − Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547A BC546B/547B/548B BC547C/548C Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, Df = 200 Hz) BC546 BC547 BC548 1. IB is value for which IC = 11 mA at VCE = 1.0 V. www.onsemi.com 2 hfe NF − dB BC546B, BC547A, B, C, BC548B, C BC547/BC548 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 1.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 5.0 Cib 3.0 Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100 Figure 4. Base−Emitter Temperature Coefficient 10 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 1.0 50 70 100 Figure 2. “Saturation” and “On” Voltages 2.0 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 40 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current−Gain − Bandwidth Product www.onsemi.com 3 50 BC546B, BC547A, B, C, BC548B, C BC546 TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25°C 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 50 100 200 -1.8 qVB for VBE -2.6 -3.0 0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT 20 Cib 10 6.0 Cob 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base−Emitter Temperature Coefficient TA = 25°C 4.0 -55°C to 125°C -2.2 20 40 C, CAPACITANCE (pF) 200 -1.4 Figure 9. Collector Saturation Region 2.0 100 -1.0 1.6 0 50 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product www.onsemi.com 4 BC546B, BC547A, B, C, BC548B, C ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel BC546BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC546BZL1G TO−92 (Pb−Free) 2000 / Ammo Box Device BC546B BC546BG BC546BRL1 BC547ARL TO−92 2000 / Tape & Reel BC547ARLG TO−92 (Pb−Free) 2000 / Tape & Reel BC547AZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC547BG TO−92 (Pb−Free) 5000 Units / Bulk BC547BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC547BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC547CG TO−92 (Pb−Free) 5000 Units / Bulk BC547CZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC548BG TO−92 (Pb−Free) 5000 Units / Bulk BC548BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC548BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC548CG TO−92 (Pb−Free) 5000 Units / Bulk BC548CZL1G TO−92 (Pb−Free) 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM SCALE 1:1 1 12 3 STRAIGHT LEAD BULK PACK DATE 09 MAR 2007 2 3 BENT LEAD TAPE & REEL AMMO PACK A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STRAIGHT LEAD BULK PACK R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X N 1 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K DIM A B C D G J K N P R V D X X J V 1 C N SECTION X−X MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLES ON PAGE 2 DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 3 TO−92 (TO−226) CASE 29−11 ISSUE AM DATE 09 MAR 2007 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 2 OFXXX 3 DOCUMENT NUMBER: 98ASB42022B PAGE 3 OF 3 ISSUE AM REVISION ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. DATE 09 MAR 2007 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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