BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Collector - Emitter Voltage
Value
VCEO
BC556
BC557
BC558
Collector - Base Voltage
Vdc
VCBO
Vdc
−80
−50
−30
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−100
−200
mAdc
Base Current − Peak
IBM
−200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
3
EMITTER
−65
−45
−30
BC556
BC557
BC558
Emitter - Base Voltage
2
BASE
Unit
TO−92
CASE 29
STYLE 17
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
THERMAL CHARACTERISTICS
BC
55xx
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BC556B/D
BC556B, BC557A, B, C, BC558B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−65
−45
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
−
−
−0.7
−1.0
−
−
−0.55
−
−0.62
−0.7
−0.7
−0.82
−
−
−
280
320
360
−
−
−
−
3.0
6.0
−
−
−
2.0
2.0
2.0
10
10
10
125
125
240
450
−
−
−
−
900
260
500
900
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −100 mAdc)
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector−Emitter Leakage Current
(VCES = −40 V)
(VCES = −20 V)
(VCES = −20 V, TA = 125°C)
V(BR)CEO
BC556
BC557
BC558
V
V(BR)CBO
BC556
BC557
BC558
V
V(BR)EBO
BC556
BC557
BC558
V
ICES
BC556
BC557
BC558
BC556
BC557
BC558
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 V)
(IC = −2.0 mAdc, VCE = −5.0 V)
(IC = −100 mAdc, VCE = −5.0 V)
hFE
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 V,
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Cob
MHz
NF
BC556
BC557
BC558
dB
hfe
BC557
A Series Device
B Series Devices
C Series Devices
−
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
http://onsemi.com
2
pF
BC556B, BC557A, B, C, BC558B
BC557/BC558
−1.0
1.5
TA = 25°C
−0.9
VCE = −10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −200 mA
IC = −100 mA
IC = −20 mA
−0.4
0
−0.02
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−10 −20
−0.1
−1.0
IB, BASE CURRENT (mA)
−0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−10
−1.0
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base−Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
−50 −100
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−20 −30 −40
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC556B, BC557A, B, C, BC558B
BC556
TJ = 25°C
VCE = −5.0 V
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
−1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
0.2
VCE(sat) @ IC/IB = 10
0
−0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
−2.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
−1.6
−1.2
IC =
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0
−10
−20
−1.0
−1.4
−1.8
−2.6
−3.0
−0.2
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
−0.1 −0.2
−0.5
−1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
−0.5 −1.0
−50
−5.0 −10 −20
−2.0
IC, COLLECTOR CURRENT (mA)
−100 −200
Figure 10. Base−Emitter Temperature Coefficient
40
6.0
−55°C to 125°C
−2.2
Figure 9. Collector Saturation Region
20
qVB for VBE
VCE = −5.0 V
500
200
100
50
20
−100
−1.0
−10
IC, COLLECTOR CURRENT (mA)
−50 −100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
BC556B, BC557A, B, C, BC558B
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
P(pk)
SINGLE PULSE
t1
t2
0.03
DUTY CYCLE, D = t1/t2
0.02
0.01
ZqJC(t) = (t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
Figure 13. Thermal Response
−200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
−100
TA = 25°C
−50
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
TJ = 25°C
BC558
BC557
BC556
−10
−5.0
−2.0
−1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
http://onsemi.com
5
10
BC556B, BC557A, B, C, BC558B
ORDERING INFORMATION
Package
Shipping†
BC556BG
TO−92
(Pb−Free)
5000 Units / Bulk
BC556BZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC557AZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC557BG
TO−92
(Pb−Free)
5000 Units / Bulk
Device
BC557BRL1
TO−92
2000 / Tape & Reel
BC557BRL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC557BZL1G
TO−92
(Pb−Free)
BC557CG
TO−92
(Pb−Free)
5000 Units / Bulk
BC557CZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC558BRLG
TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BRL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
SCALE 1:1
1
12
3
STRAIGHT LEAD
BULK PACK
DATE 09 MAR 2007
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
N
1
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
DIM
A
B
C
D
G
J
K
N
P
R
V
D
X X
J
V
1
C
N
SECTION X−X
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
---
STYLES ON PAGE 2
DOCUMENT NUMBER:
STATUS:
98ASB42022B
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
TO−92 (TO−226)
http://onsemi.com
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
3
TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 18:
PIN 1. ANODE
2. CATHODE
3. NOT CONNECTED
STYLE 19:
PIN 1. GATE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. NOT CONNECTED
2. CATHODE
3. ANODE
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 24:
PIN 1. EMITTER
2. COLLECTOR/ANODE
3. CATHODE
STYLE 25:
PIN 1. MT 1
2. GATE
3. MT 2
STYLE 26:
PIN 1. VCC
2. GROUND 2
3. OUTPUT
STYLE 27:
PIN 1. MT
2. SUBSTRATE
3. MT
STYLE 28:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 29:
PIN 1. NOT CONNECTED
2. ANODE
3. CATHODE
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 32:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 33:
PIN 1. RETURN
2. INPUT
3. OUTPUT
STYLE 34:
PIN 1. INPUT
2. GROUND
3. LOGIC
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
DOCUMENT NUMBER:
STATUS:
98ASB42022B
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
TO−92 (TO−226)
http://onsemi.com
2
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 2 OFXXX
3
DOCUMENT NUMBER:
98ASB42022B
PAGE 3 OF 3
ISSUE
AM
REVISION
ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA.
DATE
09 MAR 2007
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 11AM
Case Outline Number:
29
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative