BD438

BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. Features http://onsemi.com • Pb−Free Packages are Available* 4.0 AMP POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO Value 32 45 60 80 32 45 60 80 5.0 4.0 1.0 36 288 – 55 to + 150 Unit Vdc Collector−Emitter Voltage BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 Collector−Base Voltage VCBO Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC IB PD TJ, Tstg Vdc Adc Adc W W/°C °C TO−225AA CASE 77 STYLE 1 32 1 MARKING DIAGRAM YWW BD4xxG BD4xx Y WW G = Device Code xx = 36, 36T, 38, 40, 42 = Year = Work Week = Pb−Free Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol qJC Max 3.5 Unit Thermal Resistance, Junction−to−Case °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 ORDERING INFORMATION Device BD436 BD436G BD436T BD436TG BD438 BD438G BD440 BD440G BD442 BD442G Package TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) Shipping 500 Units/Box 500 Units/Box 50 Units/Rail 50 Units/Rail 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box 1 December, 2005 − Rev. 14 Publication Order Number: BD438/D ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎ ÎÎÎ Î Î Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î ÎÎÎÎÎÎ Î Î Î ÎÎ Î ÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎ Î ÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ Î Î Î ÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ Î Î Î ÎÎÎ Î ÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎ ÎÎÎ Î Î Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Current−Gain − Bandwidth Product (VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) Base−Emitter On Voltage (IC = 2.0 A, VCE = 1.0 V) Collector Saturation Voltage (IC = 2.0 A, IB = 0.2 A) (IC = 3.0 A, IB = 0.3 A) DC Current Gain (IC = 2.0 A, VCE = 1.0 V) DC Current Gain (IC = 500 mA, VCE = 1.0 V) DC Current Gain (IC = 10 mA, VCE = 5.0 V) Emitter Cutoff Current (VEB = 5.0 V) Collector Cutoff Current (VCB = 32 V, IE = 0) (VCB = 45 V, IE = 0) (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) Emitter−Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector−Base Breakdown Voltage (IC = 100 mA, IB = 0) Collector−Emitter Breakdown Voltage (IC = 100 mA, IB = 0) Characteristic BD436, BD438, BD440, BD442 http://onsemi.com BD436/BD438 BD440/BD442 BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 BD436 BD438 BD440 BD442 V(BR)CBO V(BR)CEO V(BR)EBO Symbol VBE(ON) VCE(sat) ICBO IEBO hFE hFE hFE fT Min 3.0 5.0 50 40 25 15 85 85 40 40 40 30 20 15 32 45 60 80 32 45 60 80 − − − − − − − − − − − Typ − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − Max 475 475 475 475 1.1 1.5 0.5 0.7 0.8 0.8 1.0 0.1 0.1 0.1 0.1 − − − − − − − − − − − − − − − − − − mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc 2 BD436, BD438, BD440, BD442 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 1.6 IC = 10 mA 100 mA 1.0 A 3.0 A 1.2 0.8 TJ = 255C 0.4 0 0.05 0.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 1. Collector Saturation Region hFE, CURRENT GAIN (NORMALIZED) 200 100 80 60 40 20 0 10 2 3 100 IC, COLLECTOR CURRENT (AMP) 1 5 Figure 2. Current Gain TJ = 25°C 1.6 VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) 2.0 10 4.0 TJ = 150°C 1.0 0.5 dc SECONDARY BREAKDOWN THERMAL LIMIT TC = 25°C BONDING WIRE LIMIT 5 ms 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V CURVES APPLY BELOW RATED VCEO BD438 BD440 BD442 1.0 2.0 5.0 10 20 50 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.030.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 0.1 IC, COLLECTOR CURRENT (AMP) Figure 3. “On” Voltage Figure 4. Active Region Safe Operating Area http://onsemi.com 3 BD436, BD438, BD440, BD442 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U Q F M C −A− 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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