BD438

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434, BD436, and BD438 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t ≤ 1 0 ms) Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature BD433 BD434 22 22 22 Value BD435 BD436 32 32 32 5 4 7 1 36 -65 to 150 150 BD437 BD438 45 45 45 V V V V A A A W o o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 BD433/434/435/436/437/438 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions for B D433/434 for B D435/436 for B D437/438 for B D433/434 for B D435/436 for B D437/438 V EB = 5 V I C = 1 00 mA for B D433/434 f or B D435/436 f or B D437/438 I B = 0 .2 A for B D433/434 f or B D435/436 f or B D437/438 V CE = 5 V V CE = 1 V f or B D433/434 f or B D435/436 f or B D437/438 V CE = 5 V f or B D433/434 f or B D435/436 f or B D437/438 V CE = 1 V V CE = 1 V f or B D433/434 f or B D435/436 f or B D437/438 V CE = 1 V V CE = 1 V 3 40 40 30 85 50 50 40 1.4 MHz 22 32 45 0.2 0.2 0.2 0.58 1.1 1.1 1.2 130 130 130 140 0.5 0.5 0.6 V CB = 2 2 V V CB = 3 2 V V CB = 4 5 V V CE = 2 2 V V CE = 3 2 V V CE = 4 5 V Min. Typ. Max. 100 100 100 100 100 100 1 Unit µA µA µA µA µA µA mA V V V V V V V V V V I CES I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A V BE ∗ Base-Emitter Voltage I C = 1 0 mA IC = 2 A h FE ∗ DC Current Gain I C = 1 0 mA I C = 5 00 mA IC = 2 A h FE1 / h FE2 ∗ Matched Pair fT Transition frequency IC = 500 mA I C = 2 50 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 BD433/434/435/436/437/438 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 3/4 BD433/434/435/436/437/438 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4