BD675AG

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • • • • • High DC Current Gain Monolithic Construction Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 These Devices are Pb−Free and are RoHS Compliant* http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS, 40 WATTS COLLECTOR 2, 4 BASE 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCEO Collector−Base Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCBO Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 0.32 W W/°C – 55 to + 150 °C Operating and Storage Junction Temperature Range EMITTER 1 Vdc 45 60 80 100 TJ, Tstg TO−225 CASE 77−09 STYLE 1 Vdc 45 60 80 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.13 °C/W 1 2 3 MARKING DIAGRAMS YWW BD6xxG YWW BD6xxAG BD6xx/BD6xxA = Device Code x = 75, 77, 79, 81 Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 15 1 Publication Order Number: BD675/D BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS BVCEO Collector−Emitter Breakdown Voltage, (Note 1) (IC = 50 mAdc, IB = 0) BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100’C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 45 60 80 100 − − − − − 500 − − 0.2 2.0 − 2.0 mAdc mAdc mAdc ON CHARACTERISTICS DC Currert Gain, (Note 1) (IC = 1.5 Adc,VCE = 3.0 Vdc) BD675G, BD677G, BD679G, BD681G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD675AG, BD677AG, BD679AG hFE Collector−Emitter Saturation Voltage, (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) BD677G, BD679G, BD681G (IC = 2.0 Adc, IB = 40 mAdc) BD675AG, BD677AG, BD679AG − 750 − 750 − − 2.5 − 2.8 VCE(sat) Base−Emitter On Voltage, (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD677G, BD679G, BD681G (IC = 2.0 Adc, VCE = 3 0 Vdc) BD675AG, BD677AG, BD679AG Vdc VBE(on) Vdc − 2.5 − 2.5 1.0 − DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 50 5.0 IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS) 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 2.0 1.0 0.5 0.2 0.1 0.05 1.0 165 BONDING WIRE LIMIT THERMALLY LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating TC = 25°C BD675, 675A BD677, 677A BD679, 679A BD681 20 2.0 5.0 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Safe Operating Area http://onsemi.com 2 100 BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. COLLECTOR NPN BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G BASE [ 8.0 k [ 120 EMITTER Figure 3. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping BD675G TO−225 (Pb−Free) 500 Units / Box BD675AG TO−225 (Pb−Free) 500 Units / Box BD677G TO−225 (Pb−Free) 500 Units / Box BD677AG TO−225 (Pb−Free) 500 Units / Box BD679G TO−225 (Pb−Free) 500 Units / Box BD679AG TO−225 (Pb−Free) 500 Units / Box BD681G TO−225 (Pb−Free) 500 Units / Box http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD 4 DATE 25 MAR 2015 3 2 1 1 2 3 FRONT VIEW BACK VIEW SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 GENERIC MARKING DIAGRAM* L YWW XX XXXXXG 2X b2 2X e b FRONT VIEW Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package c SIDE VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE STYLE 2: PIN 1. CATHODE 2., 4. ANODE 3. GATE STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER STYLE 4: PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE STYLE 5: PIN 1. MT 1 2., 4. MT 2 3. GATE STYLE 6: PIN 1. CATHODE 2., 4. GATE 3. ANODE STYLE 7: PIN 1. MT 1 2., 4. GATE 3. MT 2 STYLE 8: PIN 1. SOURCE 2., 4. GATE 3. DRAIN STYLE 9: PIN 1. GATE 2., 4. DRAIN 3. SOURCE STYLE 10: PIN 1. SOURCE 2., 4. DRAIN 3. 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