BD675

Transys Electronics LIMITED NPN DARLINGTON POWER SILICON TRANSISTOR BD 675 (BPL) TO-126 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 45 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 4.0 Collector Current IB 0.1 Base Current PD 40 Power Dissipation @ Tc=25 deg C 0.32 Derate Above 25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range Thermal Resistance Rth(j-c) 3.13 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus)* IC=50mA, IB=0 Collector Emitter (sus) Voltage ICEO VCE=23V, IB=0 Collector Cut off Current ICBO VCB=45V, IE=0 Tc=100 deg C VCB=45V, IE=0 VBE=5V,IC=0 IC=500mA, VCE=5V IC=1.5A, IB=30mA IC=1.5A, VCE=3V IC=50mA, VCE=10V, UNIT V V V A A W W/deg C deg C deg C deg C/W MIN 45 TYP MAX 500 0.2 UNIT V uA mA IEBO Emitter Cut off Current hFE* DC Current Gain Collector Emitter Saturation Voltage VCE(Sat)* VBE(on)* Base Emitter on Voltage ft Gain Bandwidth Product Pulse Test:-Pulse Width=300us, Duty Cycle=2% 800 260 - 2.0 2.0 3200 2.5 2.5 - mA mA V V MHz TO-126 (SOT-32) Plastic Package C N P B 1 2 3 A D IM A B C D E F G L M N P S M IN . M AX . S D M F E G STANDARD PACK Net Weight/Qty INNER CARTON BOX Qty 2.0K Packing Detail PACKAGE Details TO-126 Size Size OUTER CARTON BOX Qty Gr Wt 32.0K 31 kgs 500 pcs/polybag 340 gm/500 pcs 3" x 7.5" x 7.5" 17" x 15" x 13.5" All dimensions in mm. 1 2 3 L P IN C O N FIG U R ATIO N 1. E M ITTE R 2. C O LLEC TO R 3. B AS E 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 TY P. 0.49 0.75 4.5 TY P. 15.7 TY P. 1.27 TY P. 3.75 TY P. 3.0 3.2 2.5 TY P.