BF244A

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range 3 DRAIN Symbol VDS VDG VGS ID IG(f) PD Tstg Value ±30 30 30 100 10 350 2.8 –65 to +150 3 DRAIN Unit Vdc Vdc Vdc mAdc mAdc mW mW/°C °C 1 2 3 BF244A, BF244B CASE 29–11, STYLE 22 TO–92 (TO–226AA) 1 2 3 2 GATE STYLE 22 1 GATE STYLE 23 BF245, BF245A, BF245B, BF245C CASE 29–11, STYLE 23 TO–92 (TO–226AA) 2 SOURCE 1 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate–Source (VDS = 15 Vdc, ID = 200 µAdc) BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C V(BR)GSS VGS 0.4 0.4 1.6 3.2 VGS(off) IGSS –0.5 — — — — — — — 7.5 2.2 3.8 7.5 –8.0 5.0 Vdc nAdc 30 — — Vdc Vdc Gate–Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C IDSS 2.0 2.0 6.0 12 — — — — 25 6.5 15 25 mAdc 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. © Semiconductor Components Industries, LLC, 2001 1 June, 2001 – Rev. 0 Publication Order Number: BF245A/D BF245A BF245B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance Output Admittance Forward Transfer Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Cut–off Frequency(3) 3. The frequency at which gfs is 0.7 of its value at 1 kHz. (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 200 MHz) (VDS = 15 Vdc, VGS = 0, f = 200 MHz) (VDS = 20 Vdc, –VGS = 1.0 Vdc) (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) (VDS = 15 Vdc, VGS = 0) Yfs Yos Yfs Yrs Ciss Crss Coss F(Yfs) 3.0 — — — — — — — — 40 5.6 1.0 3.0 0.7 0.9 700 6.5 — — — — — — — mmhos mmhos mmhos mmhos pF pF pF MHz COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 brs @ IDSS 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS gis @ 0.25 IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.1 0.07 0.05 Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 gos @ IDSS bos @ IDSS and 0.25 IDSS gfs @ IDSS gfs @ 0.25 IDSS 0.05 0.02 0.01 10 20 30 gos @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 7001000 500 700 1000 Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos) http://onsemi.com 2 BF245A BF245B COMMON SOURCE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 1.0 350° 100 100 50° 0.9 200 300 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 400 500 600 0.6 900 800 700 900 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 32 ID = 0.25 IDSS 200 300 400 500 300° 60° 310° 50° ID = IDSS, 0.25 IDSS 800 600 400 300 200 100 0.0 700 500 0.1 900 0.2 30 29 28 27 26 25 24 0.3 31 0.7 130° 230° 130° 23 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 22 Figure 5. S11s 30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20° Figure 6. S12s 10° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 32 50° 0.6 310° 50° 31 60° 70° 80° 90° 100° 110° 120° 130° 900 800 700 600 500 400 300 ID = IDSS 200 100 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 900 0.5 300° 290° 280° 270° 60° 70° 80° 90° 100° 110° 120° 130° 30 29 28 27 26 25 24 0.4 0.7 0.3 0.6 0.3 260° 250° 240° 230° 0.4 0.5 23 0.6 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 22 Figure 7. S21s http://onsemi.com 3 Figure 8. S22s BF245A BF245B COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 20 30 gig @ IDSS, 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ 0.25 IDSS gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 gfg @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) gog @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 500 700 1000 Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 4 BF245A BF245B COMMON GATE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 200 200 300 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 32 ID = 0.25 IDSS 400 500 600 400 500 600 700 700 800 900 310° 50° 0.03 31 0.02 300 60° 70° 80° 90° 100° 110° 120° 300° 290° 280° 270° 260° 250° 240° 60° 70° 80° 90° 100° 110° 120° 600 ID = IDSS 700 800 900 100 500 600 700 800 30 29 28 27 0.4 ID = IDSS 0.01 0.3 800 900 0.0 ID = 0.25 IDSS 0.01 26 25 24 0.02 130° 230° 130° 900 23 0.03 22 190° 200° 210° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 0.04 180° Figure 13. S11g 30° 40° 20° 10° 0° 0.5 100 100 0.3 ID = IDSS 310° 50° 350° 340° 330° 320° 40° 30° 20° Figure 14. S12g 10° 0° 1.5 1.0 100 0.9 350° 300 200 400 340° 500 600 700 800 900 31 330° 32 0.4 50° ID = IDSS, 0.25 IDSS 0.8 60° 70° 80° 90° 100° 110° 120° 300° ID = 0.25 IDSS 290° 280° 900 900 270° 260° 250° 240° 60° 70° 80° 90° 100° 110° 120° 30 29 28 27 26 25 24 0.2 0.7 0.1 0.6 130° 230° 130° 23 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 22 Figure 15. S21g http://onsemi.com 5 Figure 16. S22g BF245A BF245B PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- B K XX G H V 1 D J C SECTION X–X N N STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN DIM A B C D G H J K L N P R V http://onsemi.com 6 BF245A BF245B Notes http://onsemi.com 7 BF245A BF245B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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