BTB08-800BW3G

BTB08-600BW3G, BTB08-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com • • • • • • • • Blocking Voltage to 800 V On‐State Current Rating of 8 Amperes RMS at 25°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt - 2000 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO‐220AB Package High Commutating dI/dt - 4 A/ms minimum at 125°C These are Pb-Free Devices Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.0 90 A A Value Unit V TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600BW3G BTB08-800BW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range 1 2 3 TO-220AB CASE 221A STYLE 4 BTB08-xBWG AYWW I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg 36 VDSM/VRSM +100 4.0 20 1.0 -40 to +125 -40 to +150 A2sec V A W W °C °C x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device BTB08-600BW3G BTB08-800BW3G Package TO-220AB (Pb-Free) TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semicon‐ ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 1 February, 2008 - Rev. 1 Publication Order Number: BTB08-600BW3/D BTB08-600BW3G, BTB08-800BW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 2.5 60 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On‐State Voltage (Note 2) (ITM = ± 11 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) Latching Current (VD = 24 V, IG = 60 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Non-Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) Critical Rate of Rise of On-State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) Critical Rate of Rise of Off‐State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (dI/dt)c dI/dt dV/dt 4.0 2000 50 A/ms A/ms V/ms VTM IGT 2.5 2.5 2.5 IH IL VGT 0.5 0.5 0.5 VGD 0.2 0.2 0.2 1.7 1.1 1.1 V 70 90 70 V 50 50 50 50 mA mA 1.55 V mA TJ = 25°C TJ = 125°C IDRM/ IRRM mA 0.005 1.0 Symbol Min Typ Max Unit http://onsemi.com 2 BTB08-600BW3G, BTB08-800BW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 BTB08-600BW3G, BTB08-800BW3G 125 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) 120 α = 120, 90, 60, 30° 115 α = 180° 110 DC 105 12 DC 10 180° 8 6 4 2 0 α = 30° 60° 90° 120° 100 0 1 3 4 5 6 IT(RMS), RMS ON‐STATE CURRENT (AMP) 2 7 8 0 1 2 3 4 5 6 IT(RMS), ON‐STATE CURRENT (AMP) 7 8 Figure 1. RMS Current Derating r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. On‐State Power Dissipation 100 1 TYPICAL AT TJ = 25°C MAXIMUM @ TJ = 125°C 0.1 I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) 10 0.01 0.1 1 10 100 t, TIME (ms) 1000 1 · 104 Figure 4. Thermal Response 50 MAXIMUM @ TJ = 25°C IH, HOLD CURRENT (mA) 1 45 40 35 30 25 20 15 10 5 -40 -25 -10 5 20 35 50 65 80 95 110 125 MTI2 Negative MTI2 Positive 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) 4 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Hold Current Variation Figure 3. On‐State Characteristics http://onsemi.com 4 BTB08-600BW3G, BTB08-800BW3G 100 IGT, GATE TRIGGER VOLTAGE (mA) VGT, GATE TRIGGER VOLTAGE (V) VD = 12 V RL = 30 W Q3 Q1 10 Q2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -40 -25 -10 5 Q2 Q3 Q1 VD = 12 V RL = 30 W 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ m s) 5000 VD = 800 Vpk TJ = 125°C 4K 3K 2K 1K 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10000 Figure 8. Critical Rate of Rise of Off‐State Voltage (Exponential Waveform) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I 1N4007 + MT2 1N914 51 W G MT1 CHARGE 200 V NON‐POLAR CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTB08-600BW3G, BTB08-800BW3G PACKAGE DIMENSIONS TO-220 CASE 221A-07 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -TB F C SEATING PLANE T S 4 Q 123 A U K H Z L V G D N J R STYLE 4: PIN 1. 2. 3. 4. 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