BTB16-700BW3G

BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com • • • • • • • • Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 80°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 1500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 7.5 A/ms minimum at 125°C These are Pb−Free Devices TRIACS 16 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB16−600BW3G BTB16−700BW3G BTB16−800BW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms) Peak Gate Current (TJ = 125°C, t ≤ 20 ms) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 700 800 IT(RMS) ITSM 16 170 A A Value Unit V 1 2 3 TO−220AB CASE 221A STYLE 4 BTB16−xBWG AYWW x A Y WW G = 6, 7 or 8 = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT I2t VDSM/ VRSM IGM PG(AV) TJ Tstg 120 VDSM/VRSM +100 4.0 1.0 − 40 to +125 − 40 to +150 A2sec V A W °C °C 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION Device BTB16−600BW3G BTB16−700BW3G BTB16−800BW3G Package TO−220AB (Pb−Free) TO−220AB (Pb−Free) TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. 2 1 Publication Order Number: BTB16−600BW3/D BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Symbol RqJC RqJA TL Value 1.9 60 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 22.5 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latching Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Non−Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) Critical Rate of Rise of On−State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (dI/dt)c dI/dt dV/dt 7.5 − 1500 − − − − 50 − A/ms A/ms V/ms VTM IGT − − 1.55 V mA 2.5 2.5 2.5 − − − − − 50 50 50 60 mA mA − − − 0.5 0.5 0.5 0.2 0.2 0.2 − − − − − − − − − 70 90 70 V 1.7 1.1 1.1 V − − − TJ = 25°C TJ = 125°C IDRM/ IRRM mA − − − − 0.005 2.0 Symbol Min Typ Max Unit IH IL VGT VGD http://onsemi.com 2 BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF − MT2 NEGATIVE (Negative Half Cycle) Quadrant IV All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G 125 120 TC, CASE TEMPERATURE (°C) 115 110 105 100 95 90 85 80 75 70 0 2 4 6 8 10 12 IT(RMS), RMS ON‐STATE CURRENT (AMP) 14 16 120° 180° DC 30° 60° 90° PAV, AVERAGE POWER (WATTS) 24 22 20 18 16 14 12 10 8 6 4 2 0 30° 0 2 60° 90° 180° 120° DC 4 6 8 10 12 14 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) 16 Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 1 TYPICAL AT TJ = 25°C MAXIMUM @ TJ = 125°C 0.1 I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) 10 0.01 0.1 1 10 100 t, TIME (ms) 1000 1 · 104 Figure 4. Thermal Response 55 MAXIMUM @ TJ = 25°C IH, HOLD CURRENT (mA) 1 50 45 40 35 30 25 20 15 10 5 −40 −25 −10 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 4 5 20 35 50 65 80 95 110 125 MT2 Negative MT2 Positive 0.1 TJ, JUNCTION TEMPERATURE (°C) Figure 3. On-State Characteristics Figure 5. Typical Hold Current Variation http://onsemi.com 4 BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G 100 IGT, GATE TRIGGER VOLTAGE (mA) VD = 12 V RL = 30 W Q3 1.8 1.6 1.4 1.2 10 Q1 Q2 1 0.8 0.6 1 −40 −25 −10 Q2 Q3 Q1 VD = 12 V RL = 30 W 5 20 35 50 65 80 95 110 125 0.4 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I 1N4007 + MT2 1N914 51 W G MT1 CHARGE 200 V NON‐POLAR CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTB16−600BW3G, BTB16−700BW3G, BTB16−800BW3G PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 −T− B F T C SEATING PLANE S Q H Z L V G 4 A U K 123 R J D N STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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