BUV26G

BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications. Features • • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver Pb−Free Package is Available* http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS, 85 WATTS Symbol VCEO(sus) VCBO VEBO ICM IBM IB IC Value 90 180 7.0 20 30 4.0 6.0 85 65 − 65 to +175 Unit Vdc Vdc Vdc Adc Apk Adc Adc W W °C BUV26 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package 1 2 TO−220 CASE 221A STYLE 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (pw 10 ms) Base Current − Continuous Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 60°C Operating and Storage Junction Temperature Range MARKING DIAGRAM BUV26G AYWW PD PD TJ, Tstg 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.76 Unit °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BUV26 BUV26G ORDERING INFORMATION Device Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 2 1 Publication Order Number: BUV26/D BUV26 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) Collector Cutoff Current at Reverse Bias (VCE = 180 V, VBE = −1.5 V, TC = 125°C) Emitter Base Reverse Voltage (IE = 50 mA) Emitter Cutoff Current (VEB = 5.0 V) Collector Cutoff Current (VCE = 180 V, RBE = 50 W, TC = 125°C) ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 6.0 A, IB = 0.4 A) (IC = 12 A, IB = 1.2 A) Base−Emitter Saturation Voltage (IC = 12 A, IB = 1.2 A) SWITCHING CHARACTERISTICS (Resistive Load) Turn On Time Storage Time Fall Time Storage Time Fall Time IC = 12 A, IB = 1.2 A VCC = 50 V, VBE = 6.0 V RB2 = 2.5 W VCC = 50 V, IC = 12 A IB(end) = 1.2 A, VB = 5.0 V LB = 0.5 pH, TJ = 125°C ton ts tf Ts Tf − − − − − 0.6 1.0 0.15 2.0 .15 ms ms VCE(sat) Vdc − − − 0.6 1.5 Vdc 2.0 VCEO(sus) ICEX VEBO IEBO ICER Vdc 90 − 7.0 − − − mAdc 1.0 V 30 mAdc 1.0 mAdc 3.0 Symbol Min Max Unit VBE(sat) SWITCHING CHARACTERISTICS (Inductive Load) 1. Pulse Test: Pulse width p 300 ms; Duty cycle p 2%. http://onsemi.com 2 BUV26 PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F T C SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 Q H Z L V G 4 A U K 123 R J D N STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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