SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV26A
DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 100 5 14 25 4 6 65 150 -65~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 1.92 UNIT K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
BUV26A
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO
Collector-emitter sustaining voltage
IC=0.2 A ;IB=0;L=25mH IC=5A ;IB=0.5 A IC=10A; IB=1A IC=5A ;IB=0.5 A IC=10A; IB=1A
100
V
Collector-emitter saturation voltage
0.5
V
Collector-emitter saturation voltage
1.0
V
Base-emitter saturation voltage
1.2
V
Base-emitter saturation voltage
1.5
V
Collector cut-off current
VCE =200V;VBE =-1.5V;Tj=125 VEB=5V; IC=0
1.0
mA
Emitter cut-off current
1.0
mA
Switching times resistive load
ton ts tf
Turn-on time IC=10A;IB1=1A; IB2=2A VCE =50V
0.4
0.6
ms
Storage time
0.45
1.0
µs
Fall time
0.12
0.25
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUV26A
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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