BUZ11-NR4941

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Other names and brands may be claimed as the property of others. BUZ11 Data Sheet September 2013 N-Channel Power MOSFET 50V, 30A, 40 mΩ Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • rDS(ON) = 0.040Ω File Number 2253.2 • 30A, 50V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Formerly developmental type TA9771. • Majority Carrier Device Ordering Information PART NUMBER BUZ11-NR4941 PACKAGE TO-220AB • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND BUZ11 Symbol NOTE: When ordering, use the entire part number. D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: BUZ11/D BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ11 UNITS 50 50 30 V V A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 ±20 75 0.6 -55 to 150 E 55/150/56 A V W W/oC oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA VGS = 20V, VDS = 0V - 10 100 nA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time IGSS rDS(ON) ID = 15A, VGS = 10V (Figure 8) - 0.03 0.04 Ω gfs VDS = 25V, ID = 15A (Figure 11) 4 8 - S VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω, RL = 10Ω - 30 45 ns - 70 110 ns td(OFF) - 180 230 ns tf - 130 170 ns - 1500 2000 pF pF td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS - 750 1100 Reverse Transfer Capacitance CRSS - 250 400 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) pF Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current SYMBOL ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time Reverse Recovery Charge trr QRR TEST CONDITIONS TC = 25oC TC = 25oC TJ = 25oC, ISD = 60A, VGS = 0V TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs, VR = 30V MIN TYP UNITS - - 30 A - - 120 A - 1.7 2.6 V - 200 - ns - 0.25 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). www.onsemi.com 2 MAX BUZ11 Typical Performance Curves Unless Otherwise Specified 40 POWER DISSIPATION MULTIPLIER 1.2 VGS > 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 30 20 10 0.2 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 ZθJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 150 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 60 PD = 75W OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 2.5µs 102 10µs 100µs 101 1ms TC = 25oC TJ = MAX RATED SINGLE PULSE 100 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 20V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 103 10V 40 VGS = 8.0V VGS = 7.5V VGS = 7.0V VGS = 6.5V 30 20 VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V 10 10ms 100ms DC 102 0 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS www.onsemi.com 3 6 BUZ11 20 Unless Otherwise Specified (Continued) 0.15 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 25V rDS(ON), ON-STATE RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 15 10 5 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 0.06 0.04 0.02 50 100 150 VDS = VGS ID = 1mA 3 2 1 0 -50 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) 10 CISS COSS CRSS 10-1 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 10 20 30 60 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 0 20 40 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-2 0 4 TJ, JUNCTION TEMPERATURE (oC) 100 10V 20V 0 VGS(TH), GATE THRESHOLD VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID = 15A, VGS = 10V 0 0.05 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.08 -50 5.5V 6V 6.5V 7V 7.5V 8V 9V 0.10 8 FIGURE 6. TRANSFER CHARACTERISTICS 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V 40 8 TJ = 25oC 6 4 2 0 0 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 25V 5 10 ID, DRAIN CURRENT (A) 15 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT www.onsemi.com 4 20 BUZ11 Typical Performance Curves 15 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TJ = 25oC 102 TJ = 150oC 101 100 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) ID = 45A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 103 Unless Otherwise Specified (Continued) VDS = 10V 10 VDS = 40V 5 0 3.0 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 0 10% 90% DUT VGS VGS 0 FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH 10% FIGURE 14. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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