ECH8690-TL-H

Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS(on)1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions N-channel P-channel Unit Drain to Source Voltage VDSS 60 -60 Gate to Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 4.7 -3.5 A Drain Current (Pulse) IDP 30 -30 A 1.5 W 1.8 W PW≤10μs, duty cycle≤1% When mounted on ceramic substrate V Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch 150 °C Storage Temperature Tstg - 55 to +150 °C (1200mm2×0.8mm)1unit When mounted on ceramic substrate (1200mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-001 Ordering & Package Information Device ECH8690-TL-H Top View Package ECH8690-TL-H ECH8 Shipping note 3000 pcs. / reel Pb-Free and Halogen Free 0.25 2.9 0.15 8 Packing Type: TL 5 Marking UM 2.3 2.8 0 to 0.02 LOT No. 4 1 0.65 0.3 Electrical Connection 1: Source1 2: Gate1 3: Source2 4: Gate2 5: Drain2 6: Drain2 7: Drain1 8: Drain1 0.07 0.9 0.25 TL Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 October, 2013 O1613 TKIM/61913 TKIM TC-00002960/52213TKIM TC-00002920 No.A2185-1/8 ECH8690 Electrical Characteristics at Ta = 25°C Ratings Parameter Symbol Conditions Unit min typ max [N-channel] Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=2A RDS(on)1 ID=2A, VGS=10V 42 55 mΩ RDS(on)2 ID=1A, VGS=4.5V 53 74 mΩ RDS(on)3 ID=1A, VGS=4V 61 85 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 V 1.2 1 μA ±10 μA 2.6 V 4.2 S 955 pF 58 pF Crss 45 pF Turn-ON Delay Time td(on) 7 ns Rise Time tr 8.4 ns Turn-OFF Delay Time td(off) 76 ns Fall Time tf 23 ns Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=4.7A, VGS=0V Drain to Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -1 μA Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=-10V, ID=-1mA -2.6 V Forward Transfer Admittance | yfs | VDS=-10V, ID=-1.5A 3.4 RDS(on)1 ID=-1A, VGS=-10V 73 94 mΩ RDS(on)2 ID=-0.5A, VGS=-4.5V 97 135 mΩ RDS(on)3 ID=-0.5A, VGS=-4V 108 153 mΩ VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=4.7A 18 nC 3 nC 2.8 nC 0.82 1.2 V [P-channel] Static Drain to Source On-State Resistance -60 V -1.2 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 10 ns Rise Time tr 8.8 ns Turn-OFF Delay Time td(off) 84 ns Fall Time tf 29 ns Total Gate Charge Qg 15 nC Gate to Source Charge Qgs 2.6 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD 790 VDS=-20V, f=1MHz See specified Test Circuit. VDS=-30V, VGS=-10V, ID=-3.5A pF 63 pF 45 pF 2.2 IS=-3.5A, VGS=0V -0.83 nC -1.2 V No.A2185-2/8 ECH8690 Switching Time Test Circuit [N-channel] [P-channel] No.A2185-3/8 ECH8690 No.A2185-4/8 ECH8690 No.A2185-5/8 ECH8690 No.A2185-6/8 ECH8690 Outline Drawing Land Pattern Example ECH8690-TL-H No.A2185-7/8 ECH8690 Note on usage : Since the ECH8690 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2185-8/8