FDC2512_F095

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) VDSS RDS(ON) MAX ID MAX 150 V 425 mW @ 10 V 1.4 A 150 V 475 mW @ 6 V FDC2512 D General Description D S DD This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. G TSOT23 6−Lead (SUPERSOTt−6) CASE 419BL MARKING DIAGRAM Features • 1.4 A, 150 V. • • • • • RDS(ON) = 425 mW @ VGS = 10 V RDS(ON) = 475 mW @ VGS = 6 V High Performance Trench Technology for Extremely Low RDS(ON) Low Gate Charge (8 nC Typ) High Power and Current Handling Capability Fast Switching Speed This is a Pb−Free and Halide Free Device Applications 252 MG G 252 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) • DC/DC Converter PIN ASSIGNMENT ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage 150 V VGSS Gate−Source Voltage ±20 V Drain Current −Continuous (Note 1a.) −Pulsed 1.4 8 ID EAS Single Pulse Avalanche Energy (Note 3) PD Maximum Power Dissipation (Note 1a.) (Note 1b.) TJ, TSTG Operating and Storage Junction Temperature Range A 13.5 mJ W 1.6 0.8 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 6 2 5 3 4 ORDERING INFORMATION Device FDC2512 −55 to +150 1 Package Shipping† TSOT−23−6 (SUPERSOTt−6) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a.) 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W © Semiconductor Components Industries, LLC, 2017 April, 2022 − Rev. 2 1 Publication Order Number: FDC2512/D FDC2512 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit 150 − − V − mV/°C OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 147 IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V − − 1 mA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = −20 V, VDS = 0 V − − −100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 2 2.6 4 V DV GS(th) Gate Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − −5.6 − mV/°C Static Drain–Source On–Resistance VGS = 10 V, ID = 1.4 A VGS = 6.0 V, ID = 1.3 A VGS = 10 V, ID = 1.4 A, TJ = 125°C − − − 319 332 624 425 475 875 mW On–State Drain Current VGS = 10 V, VDS = 5 V 4 − − A Forward Transconductance VDS = 10 V, ID = 1.4 A − 4 − S VDS = 75 V, VGS = 0 V, f = 1.0 MHz − 344 − pF DT J RDS(on) ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 22 − pF Crss Reverse Transfer Capacitance − 9 − pF 0.1 1.4 3.0 W − 6.5 13 ns − 3.5 7 ns − 22 33 ns − 4 8 ns − 8 11 nC − 1.5 − nC − 2.3 − nC Rg Gate Resistance SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 75 V, ID = 1 A, VGS = 10 V, RGEN = 6 W VDS = 75 V, ID = 1.4 A, VGS = 10 V DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain–Source Diode Forward Current − − 1.3 A Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) − 0.8 1.2 V trr Diode Reverse Recovery Time IF = 1.4 A, diF/dt = 300 A/ms (Note 2) − 45.8 − ns Qrr Diode Reverse Recovery Charge − 119 − nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 156°C/W when mounted on a minimum pad of 2 oz copper a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 3. EAS of 13.5 mJ is based on starting TJ = 25°C, N−ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V. www.onsemi.com 2 FDC2512 TYPICAL CHARACTERISTICS VGS = 10 V 4.5 V 4 2 0 RDS(ON), Normalized Drain−Source On−Resistance 4.0 V 2 0 4 VGS = 4.0 V 1.2 4.5 V 1.1 1 0 4 3 ID = 0.7 A 0.7 0.6 TA = 125°C 0.5 0.4 TA = 25°C 0.3 0.2 −25 0 25 50 75 100 125 3 150 5 4 Figure 3. On−Resistance Variation with Temperature 10 25°C 125°C 6 4 2 3 4 5 7 8 9 10 Figure 4. On−Resistance Variation with Gate−to−Source Voltage IS, Reverse Drain Current (A) TA = −55°C VDS = 25 V 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (5C) ID, Drain Current (A) 2 0.8 0.6 2 10 V 1 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 1 0 6.0 V Figure 1. On−Region Characteristics 1.4 8 5.0 V ID, Drain Current (A) ID = 1.4 A VGS = 10 V 0.2 −50 1.3 VDS, Drain−Source Voltage (V) 2.2 1.8 1.4 0.9 8 6 RDS(ON), On−Resistance (W) ID, Drain Current (A) 6.0 V RDS(ON), Normalized Drain−Source On−Resistance 6 1 TA = 125°C 0.1 25°C 0.01 −55°C 0.001 0.0001 6 VGS = 0 V 0 VGS, Gate to Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDC2512 TYPICAL ELECTRICAL CHARACTERISTICS (continued) VDS = 50 V 75 V 4 f = 1 MHz VGS = 0 V 400 100 V 3 2 CISS 300 200 100 1 0 10 1 2 3 5 4 6 7 8 0 9 25 50 75 100 125 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 40 100 ms 1 ms 1 10 ms 100 ms 0.1 1s DC 0.001 0.1 0 VDS, Drain to Source Voltage (V) RDS(ON) Limit VGS = 10 V Single Pulse RqJA = 156°C/W TA = 25°C 150 Single Pulse RqJA = 156°C/W TA = 25°C 30 20 10 P(pk), 0.01 COSS CRSS Qg, Gate Charge (nC) Peak Transient Power (W) 0 ID, Drain Current (A) 500 ID = 1.4 A Capacitance (pF) VGS, Gate Source Voltage (V) 5 1 100 10 1000 0 0.001 0.01 0.1 1 10 100 1000 t1, Time (s) VDS, Drain−Source Voltage (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), Normalized Effective Transient Thermal Resistance 1 D = 0.5 0.1 RqJA (t) = r(t) + RqJA RqJA = 156°C/W 0.2 0.1 0.01 P(pk) t1 0.05 t2 0.02 0.01 0.001 0.0001 TJ − TA = P * RqJA(t) Duty Cycle, D = t1/t2 Single Pulse 0.001 0.01 0.1 1 10 t1, Time (s) Figure 11. Transient Thermal Response Curve NOTE: Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDC2512 POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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