FDC3512_F095

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) VDSS RDS(ON) MAX ID MAX 80 V 77 mW @ 10 V 3.0 A 80 V 88 mW @ 6 V FDC3512 DD General Description S G DD TSOT23 6−Lead (SUPERSOTt−6) CASE 419BL This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 80 V MARKING DIAGRAM ♦ • • • • • RDS(ON) = 77 mW @ VGS = 10 V ♦ RDS(ON) = 88 mW @ VGS = 6 V High Performance Trench Technology for Extremely Low RDS(ON) Low Gate Charge (13 nC Typical) High Power and Current Handling Capability Fast Switching Speed This Device is Pb−Free, Halide Free and is RoHS Compliant 352 M 1 352 = Device Code M = Date Code Applications PIN CONNECTION • DC/DC Converter 1 6 2 5 3 4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Ratings Unit VDSS Drain−Source Voltage Parameter 80 V VGSS Gate−Source Voltage ±20 V Drain Current Continuous (Note 1a) 3.0 A Pulsed 20 (Note 1a) 1.6 (Note 1b) 0.8 ORDERING INFORMATION −55 to +150 See detailed ordering and shipping information on page 5 of this data sheet. Symbol ID PD TJ, TSTG Maximum Power Dissipation Operating and Storage Junction Temperature Range W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W 1. RqJA is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper on FR−4 board. b. 156°C/W when mounted on a minimum pad. © Semiconductor Components Industries, LLC, 2002 July, 2022 − Rev. 3 1 Publication Order Number: FDC3512/D FDC3512 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit − − 90 mJ − − 3.0 A DRAIN−SOURCE DIODE AVALANCHE RATINGS (Note 2) WDSS Drain–Source Avalanche Energy IAR Drain–Source Avalanche Current Single Pulse, VDD = 40 V, ID = 3.0 A OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA 80 − − V DBV DSS Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 80 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V − − 1 mA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V − − –100 nA DT J ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 2 2.4 4 V DV GS(th) Gate Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25_C − –6 − mV/°C Static Drain–Source On Resistance VGS = 10 V, ID = 3.0 A VGS = 6.0 V, ID = 2.8 A VGS = 10 V, ID = 3.0 A, TJ = 125_C − − − 56 61 97 77 88 141 mW On–State Drain Current VGS = 10 V, VDS = 5 V 10 − − A Forward Transconductance VDS = 10 V, ID = 3.0 A − 14 − S VDS = 40 V, VGS = 0 V, f = 1.0 MHz − 634 − pF DT J RDS(on) ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 58 − pF Crss Reverse Transfer Capacitance − 28 − pF − 7 14 ns − 3 6 ns − 24 28 ns SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Qgd VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 W − 4 8 ns − 13 18 nC Gate–Source Charge − 2.4 − nC Gate–Drain Charge − 2.8 − nC Maximum Continuous Drain–Source Diode Forward Current − − 1.3 A VDS = 40 V, ID = 3.0 A, VGS = 10 V DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING IS VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) − 0.8 1.2 V trr Diode Reverse Recovery Time IF = 3.0 A, diF/dt = 300 A/ms (Note 2) − 28.2 − nS Qrr Diode Reverse Recovery Charge − 48 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. www.onsemi.com 2 FDC3512 ID, DRAIN CURRENT (A) 20 RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 10 V 6.0 V 5.0 V 15 4.5 V 4.0 V 10 5 0 1 0 2 3 4 5 1.8 1.6 VGS = 4.0 V 1.4 4.5 V 5.0 V 6.0 V 1.2 10 V 1 0.8 0 5 2.5 0.18 ID = 3.0 A 2.2 VGS = 10 V 1.9 1.6 1.3 1 0.7 0 25 50 0.14 TA = 125°C 0.1 TA = 25°C 0.06 0.02 75 100 125 150 175 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5 V 15 10 TA = 125°C 25°C −55°C 3 4 6 10 8 Figure 4. On−Resistance Variation with Gate−to−Source Voltage 20 2 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature 5 20 ID = 1.5 A TJ, JUNCTION TEMPERATURE (°C) 0 15 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage RDS(ON), ON−RESISTANCE (W) RDS(ON), NORMALIZED DRAIN−SOURCE ON−RESISTANCE Figure 1. On−Region Characteristics 0.4 −50 −25 10 ID, DRAIN CURRENT (A) VDS, DRAIN−SOURCE VOLTAGE (V) 100 VGS = 0 V 10 1 TA = 125°C 25°C 0.1 0.01 −55°C 0.001 0.0001 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDC3512 10 1000 ID = 3.0 A VDS = 20 V 40 V 8 CAPACITANCE (pF) VGS, GATE−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (continued) 60 V 6 4 2 800 400 0 3 9 6 12 15 0 Qg, GATE CHARGE (nC) P(pk), PEAK TRANSIENT POWER (W) 100 ms 1 ms 10 ms 100 ms 1s 10 s 1 DC VGS = 10 V SINGLE PULSE RqJA = 156°C/W TA = 25°C 0.01 0.1 1 40 10 100 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (s) Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 80 SINGLE PULSE RqJA = 156°C/W TA = 25°C VDS, DRAIN−SOURCE VOLTAGE (V) 1 60 Figure 8. Capacitance Characteristics 100 RDS(ON) LIMIT 20 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) CRSS COSS 200 0 0.1 CISS 600 0 10 f = 1 MHz VGS = 0 V Figure 10. Single Pulse Maximum Power Dissipation D = 0.5 0.01 0.01 0.001 0.0001 0.2 0.1 0.05 0.02 0.01 RqJA(t) = r(t) + RqJA RqJA = 156°C/W P(pk) t1 SINGLE PULSE 0.001 0.01 t2 TJ − TA = P x RqJA(t) Duty Cycle, D = t1 / t2 0.1 1 10 t1, TIME (s) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDC3512 PACKAGE MARKING AND ORDERING INFORMATION Device FDC3512 Device Marking Package Type Reel Size Tape Width Shipping† 352 TSOT23 6−Lead (Pb−Free) 7” 8 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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