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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDD8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features
General Description
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A
Fast Switching
RoHS Compliant
Applications
Inverter
Power Supplies
D
D
G
G
S
D
-PA
K
TO
-2 52
(TO -252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous (Package limited)
TC= 25°C
-Continuous (Silicon limited)
TC= 25°C
-Continuous
TA= 25°C
EAS
Drain-Source Avalanche Energy
V
57
(Note 1a)
15.2
A
100
A
(Note 3)
153
mJ
(Note 1a)
3.1
(Note 1b)
1.3
TC= 25°C
44
TA= 25°C
TA= 25°C
TJ, TSTG
±20
100
Max Pulse Diode Current
Power Dissipation
Units
V
50
-Pulsed
IS
PD
Ratings
40
-55 to +150
Operating and Storage Junction Temperature Range
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
40
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
96
2.8
°C/W
Package Marking and Ordering Information
Device Marking
FDD8447L
Device
FDD8447L
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev. 1.2
Package
D-PAK(TO-252)
1
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
March 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
40
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VGS = 0V
±100
nA
3.0
V
mV/°C
35
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
∆TJ
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.0
1.9
-5
mV/°C
VGS = 10V, ID = 14A
7.0
8.5
VGS = 4.5V, ID = 11A
8.5
11.0
VGS = 10V, ID = 14A, TJ=125°C
10.4
14.0
VDS = 5V, ID = 14A
mΩ
58
S
1970
pF
250
pF
150
pF
1.27
Ω
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
12
21
ns
12
21
ns
38
61
ns
Fall Time
9
18
ns
Qg(TOT)
Total Gate Charge, VGS = 10V
37
52
nC
Qg(TOT)
Total Gate Charge, VGS = 5V
20
28
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
VDD = 20V, ID = 14A
VGS = 10V
6
nC
7
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 14A
(Note 1a)
(Note 2)
IF = 14A, di/dt = 100A/µs
2.6
0.8
1.2
A
V
22
ns
11
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
----------------
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25oC, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
4
FDD8447L Rev. 1.2
2
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
3
VGS = 10V
80
4.0V
6.0V
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
100
4.5V
5.0V
60
3.5V
40
20
3.0V
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
1.8
3.5V
1.4
4.0V
4.5V
5.0V
6.0V
10.0V
1
0
2.5
Figure 1. On-Region Characteristics
40
60
ID, DRAIN CURRENT (A)
80
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
ID = 14A
VGS = 10V
rDS(ON), ON-RESISTANCE (OHM)
ID = 7A
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
0.0175
0.015
o
TA = 125 C
0.0125
0.01
o
TA = 25 C
0.0075
0.005
150
2
Figure 3. On-Resistance Variation with
Temperature
1000
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
80
60
40
o
-55 C
o
TA = 125 C
20
o
25 C
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
4.5
Figure 5. Transfer Characteristics
FDD8447L Rev. 1.2
10
VGS = 0V
100
10
1
TA = 125oC
0.1
o
25 C
0.01
-55oC
0.001
0.0001
0
1.5
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
1
20
0.02
1.6
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.2
0.6
0
ID, DRAIN CURRENT (A)
VGS = 3.0V
2.6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
Typical Characteristics
3000
VDS = 10V
ID = 14A
30V
8
20V
6
4
2
2000
Ciss
1500
1000
Coss
500
Crss
0
0
0
10
20
Qg, GATE CHARGE (nC)
30
40
0
Figure 7. Gate Charge Characteristics
40
100
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
RDS(ON) LIMIT
1ms
10ms
10
DC
1
1s
100ms
VGS = 10V
SINGLE PULSE
o
RθJA = 96 C/W
0.1
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
80
60
40
20
0
0.001
100
Figure 9. Maximum Safe Operating Area
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
100
100
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
80
I(AS), AVALANCHE CURRENT (A)
I(pk), PEAK TRANSIENT CURRENT (A)
10
20
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
1000
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
2500
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
60
o
TJ = 25 C
10
40
20
0
0.0001
1
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
0.1
1000
Figure 11. Single Pulse Maximum Peak
Current
FDD8447L Rev. 1.2
1
tAV, TIME IN AVANCHE(ms)
10
Figure 12. Unclamped Inductive Switching
Capability
4
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
Typical Characteristics
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 96°C/W
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
0.001
0.0001
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD8447L Rev. 1.2
5
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
Typical Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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