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FDD8447L-F085 N-Channel PowerTrench® MOSFET
FDD8447L-F085
N-Channel PowerTrench® MOSFET
40V, 50A, 11.0mΩ
Features
Applications
Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A
Inverter
Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A
Power Supplies
Fast Switching
Automotive Engine Control
Qualified to AEC Q101
Power Train Management
RoHS Compliant
Solenoid and Motor Drivers
Electronic Transmission
Primary Switch for 12V and 24V Systems
D
D
G
S
G
D-PAK
TO -252
(TO-252)
©2009 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
S
Publication Order Number:
FDD8447L-F085/D
Symbol
VDSS
Drain to Source Voltage
VGS
ID
EAS
PD
Parameter
Ratings
40
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (TC < 80oC, VGS = 10V)
50
(Note 1)
Pulsed
A
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
40
mJ
Power Dissipation
65
W
Dreate above 25oC
0.43
W/oC
TJ, TSTG Operating and Storage Temperature
o
-55 to + 175
C
Thermal Characteristics
RθJC
Maximum Thermal Resistance Junction to Case
2.3
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
o
C/W
Package Marking and Ordering Information
Device Marking
FDD8447L
Device
FDD8447L-F085
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
40
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
-
-
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VGS = 0V
-
-
±100
nA
VGS = VDS, ID = 250µA
V
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
Drain to Source On Resistance
Forward Transconductance
1.0
1.9
3.0
ID = 14A, VGS = 10V
-
7.0
8.5
ID = 11A, VGS = 4.5V
-
8.5
11.0
ID = 14A, VGS = 10V, TJ = 125°C
-
10.4
14.0
ID = 14A, VDS = 5V
-
58
-
VDS = 20V, VGS = 0V,
f = 1MHz
-
1970
-
pF
-
250
-
pF
pF
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
150
-
Rg
Gate Resistance
f = 1MHz
-
1.27
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
37
52
nC
Qg(5)
Total Gate Charge at 5V
VGS = 0 to 5V
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller“ Charge
VDD = 20V
ID = 14A
VGS = 10V
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2
-
20
28
-
6
-
nC
-
7
-
nC
FDD8447L-F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
-
12
21
ns
-
12
21
ns
-
38
61
ns
-
9
18
ns
-
0.8
1.2
V
-
22
29
ns
-
11
14
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VDD = 20 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 14A
IF = 14A, dISD/dt = 100A/µs
Notes:
1: Starting TJ = 25oC to 175oC.
2: Starting TJ = 25oC, L = 0.05mH, IAS = 40A
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3
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
70
1.0
60
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
2
VGS = 10V
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
1
NORMALIZED THERMAL
IMPEDANCE, ZθJC
50
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
CURRENT LIMITED
BY PACKAGE
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
0.001
-5
10
SINGLE PULSE
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
IDM, PEAK CURRENT (A)
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
1
10
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
400
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
100
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
1
1ms
10ms
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
100
Figure 5. Forward Bias Safe Operating Area
80
VDD = 5V
60
40
TJ = 175oC
TJ = -55oC
20
0.1
1
10
100
Figure 6. Unclamped Inductive Switching
Capability
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.01
tAV, TIME IN AVALANCHE (ms)
100
100
ID, DRAIN CURRENT (A)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
80
VGS = 10V
VGS = 6V
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5V
VGS = 4.5V
VGS = 3.5V
VGS = 4V
40
VGS = 3V
20
o
TJ = 25 C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
0
0.0
4.5
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
40
ID = 14A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
20
o
TJ = 175 C
10
TJ = 25oC
0
2
4
6
2.5
Figure 8. Saturation Characteristics
8
10
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 7. Transfer Characteristics
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = 14A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.15
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS
ID = 250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
4000
CAPACITANCE (pF)
Ciss
1000
Coss
f = 1MHz
VGS = 0V
100
0.1
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
Figure 13. Capacitance vs Drain to Source
Voltage
ID = 1mA
1.10
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
10
ID = 14A
8
VDD = 10V
VDD = 20V
6
VDD = 30V
4
2
0
0
8
16
24
Qg, GATE CHARGE(nC)
32
40
Figure 14. Gate Charge vs Gate to Source Voltage
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6
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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