FDMC6675BZ
P-Channel POWERTRENCH)
MOSFET
−30 V, −20 A, 14.4 mW
Description
The FDMC6675BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest RDS(on) and ESD
protection.
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VDS
RDS(on) MAX
ID MAX
−30 V
14.4 mW @ 10 V
−20 A
Features
•
•
•
•
•
•
•
Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A
Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A
HBM ESD Protection Level of 8 kV Typical (Note 3)
Extended VGSS Range (−25 V) for Battery Applications
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
P−Channel
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
Typical Applications
Pin 1
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management
SS
S
G
D
DD
D
Bottom
Top
WDFN8 3.3x3.3, 0.65P
CASE 511DR
MARKING DIAGRAM
$Y&Z&2&K
FDMC
6675BZ
$Y
&Z
&2
&K
FDMC6675BZ
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
September, 2018 − Rev. 4
1
Publication Order Number:
FDMC6675BZ/D
FDMC6675BZ
MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Parameter
Symbol
Ratings
Unit
VDS
Drain to Source Voltage
−30
V
VGS
Gate to Source Voltage
±25
V
A
ID
Drain Current
− Continuous
TC = 25°C
−20
− Continuous
TA = 25°C (Note 1a)
−9.5
−32
− Pulsed
PD
TJ, TSTG
Power Dissipation
TC = 25°C
36
Power Dissipation
TA = 25°C (Note 1a)
2.3
W
°C
−55 to +150
Operating and Storage Junction Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
°C/W
RqJC
Thermal Resistance, Junction to Case
3.4
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Shipping (Qty / Packing)†
FDMC6675BZ
FDMC6675BZ
WDFN8 3.3x3.3, 0.65P
(MLP)
(Pb−Free/Halogen Free)
13″
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
−30
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
ID = −250 mA, VGS = 0 V
DBV DSS
DT J
Breakdown Voltage
Temperature Coefficient
ID = −250 mA, referenced to 25°C
−
−20
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = −24 V, VGS = 0 V
VDS = −24 V, VGS = 0 V, TJ = 125°C
−
−
−
−
−1
−100
mA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
−
−
±10
mA
−1.0
−1.9
−3.0
V
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = −250 mA
DV GS(th)
DT J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = −250 mA, referenced to 25°C
−
−6.0
−
mV/°C
RDS(on)
Static Drain to Source
On Resistance
VGS = −10 V, ID = −9.5 A
−
10.7
14.4
mW
VGS = −4.5 V, ID = −6.9 A
−
17.4
27.0
VGS = −10 V, ID = −9.5 A, TJ = 125°C
−
15.2
20.5
VDD = −5 V, ID = −9.5 A
−
28
−
gFS
Forward Transconductance
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2
S
FDMC6675BZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
VDS = −15 V, VGS = 0 V, f = 1 MHz
−
2154
2865
pF
Output Capacitance
−
392
525
pF
Reverse Transfer Capacitance
−
349
525
pF
−
11
20
ns
SWITCHING CHARACTERISTICS
td(on)
tr
Turn−On Delay Time
Rise Time
td(off)
tf
VDD = −15 V, ID = −9.5 A, VGS = −10 V,
RGEN = 6 W
−
10
20
Turn−off Delay Time
−
44
71
Fall Time
−
26
42
Qg
Total Gate Charge
VGS = 0V to −10 V, VDD = −15 V, ID = −9.5 A
−
46
65
nC
Qg
Total Gate Charge
VGS = 0V to −5 V, VDD = −15 V, ID = −9.5 A
−
26
37
nC
Qgs
Gate to Source Charge
VDD = −15 V, ID = −9.5 A
−
6.4
−
nC
Qgd
Gate to Drain ”Miller” Charge
VDD = −15 V, ID = −9.5 A
−
13
−
nC
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = −9.5 A (Note 2)
−
−0.89
−1.3
V
VGS = 0 V, IS = −1.6 A (Note 2)
−
−0.73
−1.2
V
trr
Reverse Recovery Time
IF = −9.5 A, di/dt = 100 A/ms
−
24
38
ns
Qrr
Reverse Recovery Charge
−
15
27
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
a) 53°C/W when mounted on
a 1 in2 pad of 2 oz copper
b) 125°C/W when mounted on
a minimum pad
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
FDMC6675BZ
TYPICAL CHARACTERISTICS
(TJ = 25 °C unless otherwise noted)
5.0
VGS = −4.5 V
24
VGS = −6 V
VGS = −10 V
16
VGS = −3.5 V
8
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
0
0.0
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
4.5
VGS = −4 V
Normalized Drain to
Source On−resistance
ID, Drain Current [A]
32
VGS = −3.5 V
4.0
3.5
VGS = −4 V
3.0
2.5
VGS = −4.5 V
2.0
VGS = −6 V
1.5
1.0
VGS = −10 V
0.5
0.5
1.0
1.5
2.0
2.5
0
3.0
8
VDS, Drain-Source Voltage [V]
16
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.6
50
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
VGS = −10 V
rDS(on) Drain to Source
On−resistance
Normalized Drain to
Source On−resistance
ID = −9.5 A
1.2
1.0
0.8
0.6
−75 −50 −25
0
25
50
40
ID = −9.5 A
30
TJ = 125 oC
20
10
TJ = 25 oC
0
75 100 125 150
2
tAV, Time in Avalanche (ms)
4
6
8
10
VGS, Gate to Source Voltage [V]
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On−Resistance vs Gate to
Source Voltage
100
32
IS, Reverse Drain Current (A)
Pulse Duration = 80 μs
Duty Cycle = 0.5% Max
ID, Drain Current (A)
32
ID, Drain Current (A)
Figure 1. On-Region Characteristics
1.4
24
24
VDS = −5 V
16
TJ = 150 oC
TJ = 25 oC
8
TJ = −55 oC
1
2
3
4
10
TJ = 150 oC
TJ = 25 oC
0.1
TJ = −55oC
0.01
0.2
0
0
VGS = 0 V
5
VGS, Gate to Source Voltage (V)
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
FDMC6675BZ
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10
5000
ID = −9.5 A
8
Capacitance (pF)
VGS, Gate to Source Voltage (V)
(TJ = 25 °C unless otherwise noted)
VDD = −10 V
6
VDD = −15 V
4
VDD = −20 V
Ciss
1000
Coss
2
0
0
10
20
30
40
100
0.1
50
1
Qg, Gate Charge [nC]
30
Figure 8. Capacitance vs Drain to Source Voltage
50
50
ID, Drain Current (A)
IAS, Avalanche Current (A)
10
VDS, Drain to Source Voltage
Figure 7. Gate Charge Characteristics
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
40
VGS = −10 V
VGS = −4.5 V
30
20
Limited by Package
10
o
RqJC = 3.4 C/W
1
0.001
0.01
0.1
1
10
0
100
25
50
VDS, Drain-Source Voltage
[V]
75
100
125
150
TC, Case Temperature (5C)
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
−4
70
10
Ig, Gate Leakage Current (A)
ID, Drain Current (A)
Crss
f = 1 MHz
VGS = 0 V
10
1 ms
10 ms
1
THIS AREA IS
LIMITED BY r DS(on)
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RqJA = 125 oC/W
10 s
DC
TA = 25 oC
VGS = 0V
−5
10
TJ = 150oC
−6
10
−7
10
TJ = 25oC
−8
10
−9
0.01
10
0.01
0.1
1
10
100
0
VDS, Drain to Source Voltage (V)
5
10
15
20
25
VGS, Gate to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Igss vs Vgss
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5
30
FDMC6675BZ
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(TJ = 25 °C unless otherwise noted)
P(PK) , Peak Transient Power (W)
1000
VGS = − 10 V
100
SINGLE PULSE
RθJA = 125°C/W
10
TA = 25°c
1
0.3
−3
10
−2
−1
10
10
11
0
100
1000
t, Pulse Width (sec)
Figure 13. Single Pulse Maximum Power Dissipation
r(t), Normalized Effective
Transient Thermal Resistance
2
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
Notes:
ZqJA(t) = r(t) × RqJA
RqJA = 125°C/W
Peak TJ = PDM × ZqJA(t) + TC
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
−3
10
−2
10
−1
10
11
0
100
t, Rectangular Pulse Duration (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC
and/or other countries.
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6
t2
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
GENERIC
MARKING DIAGRAM*
XXXX
AYWWG
G
DOCUMENT NUMBER:
DESCRIPTION:
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
98AON13650G
WDFN8 3.3x3.3, 0.65P
DATE 02 FEB 2022
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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