FDMT800120DC

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120 V, 128 A, 4.2 m 特性 概述  最大值 rDS(on) = 4.2 m （VGS = 10 V、 ID = 20 A） 此 N 沟道 MOSFET 采用 Fairchild 先进的 PowerTrench® 工艺生 产。先进的硅技术和 Dual CoolTM 封装技术完美融合，可在提供 最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性 能。  最大值 rDS(on) = 6.4 m （VGS = 6 V、 ID = 16 A）  低 rDS(on) 和高效的先进硅封装  下一代先进体二极管技术，专为软恢复设计 应用  薄型 8x8mm MLP 封装  OringFET/ 负载开关  MSL1 强健封装设计  同步整流  100% 经过 UIL 测试  DC-DC 转换  符合 RoHS 标准 引脚 1 引脚 1 G S S S S D D D 顶 Dual CoolTM 88 D G D S D S D S D 底 MOSFET 最大额定值 TA = 25 °C，除非另有说明。 符号 参数 VDS 漏极 — 源极电压 VGS 栅极 — 源极电压 TJ, TSTG V — 连续 TC = 100 °C （注 5） 81 — 连续 TA = 25 °C （注 1a） 20 — 脉冲 PD ±20 TC = 25 °C 单脉冲雪崩能量 EAS 单位 V 漏极电流 — 连续 ID 功耗 TC = 25 °C 功耗 TA = 25 °C （注 5） 额定值 120 128 （注 4） 767 （注 3） 1350 156 （注 1a） 工作和保存结温范围 3.2 -55 to +150 A mJ W °C 热特性 RJC 结至外壳热阻 （顶部源极） 1.6 RJC 结至外壳热阻 （底部漏极） 0.8 RJA 结至环境热阻 （注 1a） 38 RJA 结至环境热阻 （注 1b） 81 RJA 结至环境热阻 （注 1i） 15 RJA 结至环境热阻 （注 1j） 21 RJA 结至环境热阻 （注 1k） 9 °C/W 封装标识与定购信息 器件封装 800120DC ©2015 飞兆半导体公司 FDMT800120DC Rev. 1.1 器件 FDMT800120DC 封装 Dual CoolTM 88 1 卷盘大小 13” 卷带宽度 13.3 mm 数量 3000 件 www.fairchildsemi.com FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 2015 年 8 月 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVDSS 漏极 — 源极击穿电压 ID = 250 A, VGS = 0 V BVDSS TJ 击穿电压温度系数 ID = 250 A，参考 25 °C IDSS 零栅极电压漏极电流 VDS = 96 V, VGS = 0 V 1 A IGSS 栅 — 源极漏电流 VGS = ±20 V, VDS = 0 V 100 nA VGS(th) 栅极至源极阀值电压 VGS = VDS, ID = 250 A 4.0 V VGS(th) TJ 栅极至源极阀值电压温度系数 ID = 250 A，参考 25 °C -12 VGS = 10 V, ID = 20 A 3.45 4.2 rDS(on) 漏极至源极静态导通电阻 VGS = 6 V, ID = 16 A 4.6 6.4 VGS = 10 V, ID = 20 A, TJ = 125 °C 6.3 7.7 VDS = 5 V, ID = 20 A 69 120 V 97 mV/°C 导通特性 gFS 正向跨导 2.0 3.1 mV/°C m S 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Rg 栅极阻抗 VDS = 60 V, VGS = 0 V, f = 1 MHz 0.1 5605 7850 pF 778 1090 pF 27 40 pF 1.4 3.5  29 47 ns 18 33 ns 40 64 ns 9.5 19 ns 76 107 nC 48 68 nC 开关特性 td(on) 导通延迟时间 tr 上升时间 td(off) 关断延迟时间 tf 下降时间 Qg(TOT) 总栅极电荷 VGS = 0 V 至 10 V Qg(TOT) 总栅极电荷 VGS = 0 V 至 6 V Qgs 栅极 — 源极电荷 Qgd 栅极 — 漏极 “ 米勒 ” 电荷 VDD = 60 V, ID = 20 A, VGS = 10 V, RGEN = 6  VDD = 60 V, ID = 20 A 25 nC 15 nC 漏极 — 源极二极管特性 VSD 源极 — 漏极二极管正向电压 trr 反向恢复时间 Qrr 反向恢复电荷 ©2015 飞兆半导体公司 FDMT800120DC Rev. 1.1 VGS = 0 V、 IS = 2.9 A （注 2） 0.7 1.1 VGS = 0 V, IS = 20 A （注 2） 0.8 1.2 IF = 20 A, di/dt = 100 A/ms 2 V 87 139 ns 164 263 nC www.fairchildsemi.com FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 电气特性 TJ = 25 °C，除非另有说明。 RJC 结至外壳热阻 （顶部源极） 1.6 RJC 结至外壳热阻 （底部漏极） 0.8 RJA 结至环境热阻 （注 1a） 38 RJA 结至环境热阻 （注 1a） 81 RJA 结至环境热阻 （注 1c） 26 RJA 结至环境热阻 （注 1d） 34 RJA 结至环境热阻 （注 1e） 14 RJA 结至环境热阻 （注 1f） 16 RJA 结至环境热阻 （注 1g） 26 RJA 结至环境热阻 （注 1h） 60 RJA 结至环境热阻 （注 1i） 15 RJA 结至环境热阻 （注 1j） 21 RJA 结至环境热阻 （注 1k） 9 RJA 结至环境热阻 （注 1l） 11 °C/W 注： 1. RJA 通过安装在 FR-4 电路板上的器件确定，该电路板使用指定的 2 oz 铜焊盘，如下图所示。 RCA 由用户的电路板设计确定。 a. 38 °C/W （安装于 a 1 平方英寸  2 oz 铜焊盘） b. 81 °C/W（安装于最小 2 oz 铜焊盘） DS DF SS SF G DS DF SS SF G c. 静止空气， 20.9x10.4x12.7mm 铝质散热器， 1 平方英寸 2 oz 铜焊盘 d. 静止空气， 20.9x10.4x12.7mm 铝质散热器，最小 2 oz 铜焊盘 e. 静止空气， 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器， 1 平方英寸 2 oz 铜焊盘 f. 静止空气， 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器，最小 2 oz 铜焊盘 g. 200FPM 气流，无散热器， 1 平方英寸 2 oz 铜焊盘 h. 200FPM 气流，无散热器，最小 2 oz 铜焊盘 i. 200FPM 气流， 20.9x10.4x12.7mm 铝质散热器， 1 平方英寸 2 oz 铜焊盘 j. 200FPM 气流， 20.9x10.4x12.7mm 铝质散热器，最小 2 oz 铜焊盘 k. 200FPM 气流， 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器， 1 平方英寸 2 oz 铜焊盘 l. 200FPM 气流， 45.2x41.4x11.7mm Aavid Thermalloy 器件号 10-L41B-11 散热器，最小 2 oz 铜焊盘 2. 脉冲测试：脉冲宽度：< 300 ms，占空比：< 2.0%。 3. EAS 为 1350 mJ，基于起始 TJ = 25 °C ； N-ch：L = 3 mH、 IAS = 30 A、 VDD = 120 V、 VGS =10 V. 100% 经过测试 （L = 0.1 mH、 IAS = 93 A。） 4. 有关脉冲编号的更多详情，请参考图 11 中的 SOA 图形。 5. 计算得到的连续电流仅限于最大结温，实际连续电流将受限于散热以及电气机械应用的电路板设计。 ©2015 飞兆半导体公司 FDMT800120DC Rev. 1.1 3 www.fairchildsemi.com FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 热特性 320 5 240 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 7 V VGS = 6.5 V 160 VGS = 6 V 80 VGS = 5.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5.5 V 4 VGS = 6 V 3 VGS = 6.5 V 2 1 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 5 0 80 VDS, DRAIN TO SOURCE VOLTAGE (V) 240 320 图 2. 标准化导通电阻与漏极电流和栅极电压的关系 20 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 2.0 1.5 1.0 0.5 -75 SOURCE ON-RESISTANCE (m) 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 160 ID, DRAIN CURRENT (A) 图 1. 通态区域特性 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 15 ID = 20 A 10 TJ = 125 oC 5 TJ = 25 oC 0 -50 -25 0 25 50 75 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) 图 3. 标准化导通电阻与结温的关系 图 4. 导通电阻与栅极 — 源极电压的关系 320 320 240 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V VGS = 7 V VDS = 5 V 160 TJ = 150 oC TJ = 25 oC 80 TJ = -55 oC 0 2 3 4 5 6 7 8 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 0.001 0.0 VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 图 5. 传输特性 ©2015 飞兆半导体公司 FDMT800120DC Rev. 1.1 100 图 6. 源极 — 漏极二极管正向电压与源极电流的关系 4 www.fairchildsemi.com FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 典型特性 TJ = 25°C，除非另有说明。 10000 ID = 20 A Ciss VDD = 35 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 60 V 6 VDD = 85 V 4 1000 Coss 100 Crss 10 2 f = 1 MHz VGS = 0 V 0 0 20 40 60 1 0.1 80 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 图 7. 栅极电荷特性 图 8. 电容与漏极 — 源极电压的关系 150 500 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RJC = 0.8 C/W 100 TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 1 0.01 0.1 1 10 100 120 VGS = 10 V 90 60 VGS = 6 V 30 0 25 1000 50 75 100 图 10. 最大连续漏极电流与壳温的关系 2000 1000 P(PK), PEAK TRANSIENT POWER (W) 40000 SINGLE PULSE RJC = 0.8 oC/W ID, DRAIN CURRENT (A) 10000 10 s 100 1 THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED 1 ms o RJC = 0.8 C/W 0.1 0.1 150 TC, CASE TEMPERATURE ( C) 图 9. 非箝位电感开关能力 10 125 o tAV, TIME IN AVALANCHE (ms) TC = 25 oC 1 10 ms CURVE BENT TO MEASURED DATA 10 DC 100 500 1000 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) 图 11. 正向偏压安全工作区 ©2015 飞兆半导体公司 FDMT800120DC Rev. 1.1 TC = 25 oC 图 12. 单个脉冲最大功耗 5 www.fairchildsemi.com FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 典型特性 TJ = 25°C，除非另有说明。 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -5 10 注： ZJC(t) = r(t) x RJC RJC = 0.8 oC/W 峰值 TJ = PDM x ZJC(t) + TC 占空比 D = t1 / t2 SINGLE PULSE -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) 图 13. 结至外壳瞬态热响应曲线 ©2015 飞兆半导体公司 FDMT800120DC Rev. 1.1 6 www.fairchildsemi.com FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 典型特性 TJ = 25°C，除非另有说明。 (2X) 0.05 C 8.00±0.10 8 A 5 8 B 8.00 6.90 2.00 5 1.10 KEEP OUT AREA 5.23 4.24 3.94 PKG CL 8.00±0.10 9.00 (1.83) 1.55 (2.41) 1 4 PKG CL 4.03 3.68 0.05 C 1.13 1 (2X) 1.10 (1.56) (8X) SEE DETAIL A (1.00) 5.10 7.10 4 0.48 LAND PATTERN RECOMMENDATION 0.30 0.20 0.95 0.75 0.10 .05 6.00 2.00 (0.50) PIN #1 IDENT 1 (0.40) 2 3 4 C A B C 1.10 8X 0.90 0.70 0.50 1.68 1.48 1.20 (0.91) 2.78 (1.23) 8 (0.60) 7 7.00 6.80 6 5 0.45 0.25 (4X) 5.33 5.13 0.05 0.00 C SEATING PLANE SCALE: 2X NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE IS NOT PRESENTLY REGISTERED WITH ANY STANDARDS COMMITTEE. B) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. C) ALL DIMENSIONS ARE IN MILLIMETERS. D) DRAWING CONFORMS TO ASME Y14.5M-2009. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUR AREA. F) DRAWING FILENAME: MKT-PQFN08RREV2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com