FDP8030L

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Other names and brands may be claimed as the property of others. FDP8030L/FDB8030L FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 80 A, 30 V. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series S Absolute Maximum Ratings Symbol TO-263AB FDB Series Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current S o TA=25 C unless otherwise noted Parameter VDSS PD G Ratings Units 30 V ±20 V – Continuous (Note 1) 80 A – Pulsed (Note 1) 300 187 W Derate above 25°C 1.25 W°C -65 to +175 °C 275 °C Total Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 0.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W 2012 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDP8030L/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 20 V, ID = 80 A 1500 mJ 80 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA 2 V On Characteristics 30 V 23 mV/°C (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VGS = 4.5 V, ID = 80 A TJ=125°C ID = 70 A ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 80 A 170 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 10500 pF 2700 pF 1650 pF VGS = 10 V, 1 1.5 –5 3.1 4.0 3.6 mV/°C 3.5 5.6 4.5 60 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics tD(on) Turn–On Delay Time tr Turn–On Rise Time tD (off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 15 V, VGS = 4.5 V, RGS = 10 Ω ID = 50 A, RGEN = 10 Ω VDS = 15 V, ID = 80 A, VGS = 5 V 20 35 ns 185 225 ns 160 200 ns 200 240 ns 120 170 nC 27 nC 48 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current (Note 1) 80 A ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 1) 300 A VSD Drain–Source Diode Forward Voltage 1.3 V VGS = 0 V, IS = 80 A Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 (Note 1) 1 FDP8030L/FDB8030L Electrical Characteristics FDP8030L/FDB8030L Typical Characteristics 3


3.0V R DS(ON) , NORMALIZED 4.5V 3.5V 80 60 40 2.5V 20 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 100 2 0 0.5 1 1.5 V DS , DRAIN-SOURCE VOLTAGE (V) 3.0V 1.5 3.5V 4.5V 10V 0 20 2 Figure 1. On-Region Characteristics. 6.0V 1 0.5 0 VGS = 2.5V 2.5 40 60 80 I D, DRAIN CURRENT (A) 100 120 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.01 ID = 40A 0.009 RDS(ON), ON-RESISTANCE (OHM) ID = 80A VGS = 10V 1.4 1.2 1 0.8 0.008 0.007 0.006 TA = 125oC 0.005 0.004 0.003 TA = 25oC 0.002 0.001 0.6 -50 -25 0 25 50 75 100 T J, JUNCTION TEMPERATURE (°C) 125 0 150 2 4 5 6 7 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 60 I S, REVERSE DRAIN CURRENT (A) V DS = 10V 50 40 TA = 125°C 25°C -55°C 30 20 10 0 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. I D, DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1 2 3 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 10 TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 V GS = 0V 0 0.4 0.6 0.8 1 1.2 0.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDP8030L/FDB8030L Typical Characteristics 18000 ID = 80A V DS = 5V 10V 15V 8 6 4 2 0 5000 C oss 2000 1000 0 80 120 160 Q g, GATE CHARGE (nC) 40 200 C rss VGS = 0V 500 0.1 240 Figure 7. Gate Charge Characteristics. 1 2 5 10 0.5 V DS, DRAIN TO SOURCE VOLTAGE (V) 5000 SINGLE PULSE R θJC = 0.8°C/W TC = 25°C 4000 100 THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 RθJC = 0.8 oC/W CURVE BENT TO MEASURED DATA o TC = 25 C 0.1 POWER (W) 100 μs 1 30 Figure 8. Capacitance Characteristics. 600 I D, DRAIN CURRENT (A) C iss 10000 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 10 10 ms 100 ms DC 2000 1000 100 1010 1 V DS , DRAIN-SOURCE VOLTAGE (V) 3000 0 0.1 Figure 9. Maximum Safe Operating Area. 0.3 1 3 10 30 100 SINGLE PULSE TIME (mSEC) 300 1,000 Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 1 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.05 0.03 0.02 RθJC (t) = r(t) * RθJC RθJC = 0.8 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 Single Pulse 0.005 0.01 0.05 t2 TJ - TC = P * R θJC (t) Duty Cycle, D = t 1 /t 2 0.1 0.5 1 5 t1 ,TIME (ms) 10 50 100 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 500 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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