FDS4488

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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS4488 30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required. • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V • Low gate charge (9.5 nC typical) • High performance trench technology for extremely low RDS(ON) Applications • High power and current handling capability • DC/DC converter • Load switch • Motor drives DD DD DD DD SO-8 Pin 1 SO-8 G G S S SS SS Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter 30 V V GSS Gate-Source Voltage ±25 V ID Drain Current 7.9 A – Continuous (Note 1a) – Pulsed PD 40 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ , TSTG W 1.0 –55 to +175 °C (Note 1a) 50 °C/W (Note 1) 25 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4488 FDS4488 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS4488 Rev C (W) FDS4488 April 2013 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C V DS = 24 V, V GS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward V GS = 25 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –25 V, V DS = 0 V –100 nA 1.8 –6 3 V mV/°C 15 21 22 22 30 35 mΩ On Characteristics 30 V mV/°C 21 (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = 10 V, V DS = 5 V gFS Forward Transconductance V DS = 10 V, ID = 7.9 A 24 S V DS = 15 V, f = 1.0 MHz V GS = 0 V, 927 pF 241 pF 97 pF 1 V GS = 10 V, ID = 7.9 A V GS = 4.5 V, ID = 6.8 A V GS = 10 V, ID = 7.9 A, TJ =125°C 20 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics 0.1 1.4 3.2 Ω 7.4 15 ns 7.5 15 ns ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time V DD = 15 V, V GS = 10 V, td(off) Turn–Off Delay Time 25 40 tf Turn–Off Fall Time 5 10 ns Qg Total Gate Charge 9.5 13 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = 15 V, V GS = 5 V ID = 1 A, RGEN = 6 Ω ID = 7.9 A, 3.3 nC 3.1 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 7.9 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge (Note 2) 0.7 2.1 A 1.2 V 22 nS 20 nC Notes : 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS4488 Rev C (W) FDS4488 Electrical Characteristics FDS4488 Typical Characteristics 40 2.6 6.0V 4.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) V GS = 10V 4.0V 30 20 3.5V 10 3.0V 0 2.4 V GS=3.5V 2.2 2 1.8 4.0V 1.6 4.5V 1.4 5.0V 6.0V 1.2 10V 1 0.8 0 0.5 1 1.5 2 2.5 3 0 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 0.08 ID = 7.9A V GS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 ID = 4A 0.06 T A = 125o C 0.04 0.02 TA = 25 oC 0 -50 -25 0 25 50 75 100 125 150 175 2 4 TJ , JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 25 100 TA = -55o C 25o C IS, REVERSE DRAIN CURRENT (A) V DS = 5V 20 ID, DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 125o C 15 10 5 V GS = 0V 10 T A = 125o C 1 25o C 0.1 -55o C 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4488 Rev C (W) FDS4488 Typical Characteristics 1600 10 V DS =10V V GS, GATE-SOURCE VOLTAGE (V) ID = 7.9A f = 1MHz V GS = 0 V 15V 8 1200 CAPACITANCE (pF) 20V 6 4 CISS 800 COSS 400 2 CRSS 0 0 0 4 8 12 16 20 0 5 Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 R DS(ON) LIMIT ID, DRAIN CURRENT (A) 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g, GATE CHARGE (nC) 100µs 1ms 10ms 10 100ms 1s 1 10s DC V GS = 10V SINGLE PULSE 0.1 RθJA = 125o C/W TA = 25o C 0.01 0.1 1 10 100 SINGLE PULSE R θJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 VDS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θJA(t) = r(t) * R θJA R θJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 T J - TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4488 Rev C (W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ Green FPS™ QFET® CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® Quiet Series™ Gmax™ CROSSVOLT™ TINYOPTO™ RapidConfigure™ GTO™ CTL™ TinyPower™ IntelliMAX™ Current Transfer Logic™ ™ TinyPWM™ ISOPLANAR™ DEUXPEED® TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ EfficentMax™ SmartMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ μSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™ tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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