FFSM1065A

Silicon Carbide Schottky Diode 650 V, 10 A FFSM1065A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 5. Cathode 3, 4. Anode 1, 2. Floating Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 47 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Pin1 5 4 3 21 PQFN 8y8, 2P CASE 483AP MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSM 1065A $Y &Z &3 &K FFSM1065A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 December, 2019 − Rev. 3 1 Publication Order Number: FFSM1065A/D FFSM1065A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol VRRM EAS Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy IF (Note 1) Continuous Rectified Forward Current @ TC < 140°C Continuous Rectified Forward Current @ TC < 135°C IF, Max Non-Repetitive Peak Forward Surge Current Value Unit 650 V 47 mJ 10 A 11 TC = 25°C, 10 ms 600 A TC = 150°C, 10 ms 580 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 56 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 28 A Ptot Power Dissipation TC = 25°C 71 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 12 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 47 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 9.7 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter Thermal Resistance, Junction to Case, Max RqJC Value Unit 2.1 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 10 A, TC = 25°C − 1.50 1.75 V IF = 10 A, TC = 125°C − 1.6 2.0 IF = 10 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 34 − nC Total Capacitance VR = 1 V, f = 100 kHz − 575 − pF VR = 200 V, f = 100 kHz − 62 − VR = 400 V, f = 100 kHz − 47 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping† FFSM1065A FFSM1065A PQFN 8x8, 2P (Halogen Free) 3000Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FFSM1065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 10 IR, REVERSE CURRENT ( mA) IF, FORWARD CURRENT (A) 8 6 4 TJ = 175 oC 2 TJ = 25 oC TJ = 125 oC TJ = 75 oC TJ = −55oC −6 10 TJ = 175 oC −7 10 TJ = 125 oC TJ = 75 oC −8 10 TJ = 25 oC 0.5 1.0 1.5 10 2.0 200 300 Figure 1. Forward Characteristics D = 0.1 PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 600 650 80 60 D = 0.2 D = 0.3 D = 0.5 20 D = 0.7 0 25 D=1 50 75 100 125 150 60 40 20 0 25 175 o 50 75 100 125 150 175 o TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C) Figure 3. Current Derating Figure 4. Power Derating 50 1000 40 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 500 Figure 2. Reverse Characteristics 100 40 400 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 80 TJ = −55 oC −9 0 0.0 30 20 10 0 0 100 200 300 400 500 100 10 0.1 600 650 VR, REVERSE VOLTAGE (V) 1 10 100 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSM1065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY ( mJ) 12 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER 0.1 PDM D=0.5 0.01 0.1 0.01 t1 0.2 t2 NOTES: 0.05 0.02 0.001 ZqJC(t) = r(t) x RqJC RqJC = 2.1 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.0005 −6 10 −5 −4 10 −3 10 −2 10 −1 10 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 1 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE A DOCUMENT NUMBER: 98AON13664G DESCRIPTION: PQFN4 8X8, 2P DATE 06 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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