FFSM1065B

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Silicon Carbide Schottky Diode 650 V, 10 A FFSM1065B Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com VRRM IF 650 V 10 A Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 5 Cathode 3, 4 Anode 1, 2 Floating Schottky Diode Pin1 5 Applications 4 • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits 3 21 PQFN 8y8, 2P CASE 483AP MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (starting TJ = 25°C, IAS = 14 A, L = 0.5 mH, V = 50 V) Continuous Rectified Forward Current TC < 150 Non−Repetitive Peak Forward Surge Current (tP = 10 ms) TC = 25°C Symbol Value Unit VRRM 650 V EAS 49 mJ 10 A IF TC < 135 $Y FFSM 1065B &Z&K&3 13.5 IFM TC = 150°C A 532 468 Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.3 ms IFSM 42 A Power Dissipation TC = 25°C Ptot 98 W TC = 150°C Operating Junction and Storage Temperature Range MARKING DIAGRAM $Y &Z &K &3 FFSM1065B = ON Semiconductor Logo = Assembly Plant Code = Lot Code = Numeric Date Code = Specific Device Code 16 TJ, Tstg −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. THERMAL RESISTANCE Parameter Thermal Resistance, Junction−to−Case, Max © Semiconductor Components Industries, LLC, 2019 July, 2020 − Rev. 2 Symbol Value Unit RqJC 1.53 °C/W 1 Publication Order Number: FFSM1065B/D FFSM1065B ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Forward Voltage Reverse Current Min Typ Max Unit IF = 10 A, TJ = 25°C Test Condition − 1.38 1.7 V IF = 10 A, TJ = 125°C − 1.6 IF = 10 A, TJ = 150°C − 1.67 VR = 650 V, TJ = 25°C − 0.5 40 mA VR = 650 V, TJ = 125°C − 1 80 VR = 650 V, TJ = 175°C − 2 160 Total Capacitive Charge V = 400 V − 25 − nC Total Capacitance VR = 1 V, f = 100 kHz − 424 − pF VR = 300 V, f = 100 kHz − 39 − VR = 600 V, f = 100 kHz − 35 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping* FFSM1065B FFSM1065B PQFN 8X8, 2P (Halogen Free) 3000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2 FFSM1065B TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 10 16 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 20 12 8 TJ = 25 oC TJ = 75 oC 4 oC TJ = 125 TJ = 175 oC 0 0.0 TJ = −55oC 0.5 1.0 1.5 −6 10 TJ = 175 oC −7 10 TJ = 125 oC TJ = 75 oC −8 10 TJ = 25 oC TJ = −55 oC −9 2.0 2.5 10 3.0 200 300 Figure 1. Forward Characteristics PTOT , POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 40 D = 0.1 D = 0.2 D = 0.3 D = 0.5 20 D = 0.7 D = 1 0 25 50 75 100 125 150 100 80 60 40 20 0 25 175 Figure 3. Current Derating 75 100 125 150 175 Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 50 TC, CASE TEMPERATURE (5C) o TC, CASE TEMPERATURE (C) 20 10 0 600 650 120 100 60 500 Figure 2. Reverse Characteristics 120 80 400 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 0 100 200 300 400 500 100 10 0.1 600 650 1 10 100 650 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSM1065B TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Ec, CAPACITIVE ENERGY (mJ) 10 8 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER 0.1 0.01 0.001 D=0.5 D=0.2 D=0.1 D=0.05 D=0.01 D=0.02 SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 4 0.1 FFSM1065B PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE O www.onsemi.com 5 FFSM1065B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 6 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative