FGA6530WDF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA6530WDF 650 V, 30 A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for welder and industial applications where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM(1) Applications • High Input Impedance • Welder and Industrial Application • Fast Switching • Power Factor Correction • Tighten Parameter Distribution • RoHS Compliant C G G C TO-3PN E Absolute Maximum Ratings T C Symbol VCES VGES E = 25°C unless otherwise noted Description FGA6530WDF Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage  20 V  30 V Collector Current @ TC = 25oC 60 A Collector Current @ TC = 100oC 30 A ILM (1) Pulsed Collector Current @ TC = 25oC 90 A ICM (2) Pulsed Collector Current IC IF IFM PD Transient Gate to Emitter Voltage 90 A Diode Forward Current @ TC = 25oC 30 A Diode Forward Current o 15 A 60 A W @ TC = 100 C Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 176 Maximum Power Dissipation @ TC = 100oC 88 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 55.9  Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature ©2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 1 www.fairchildsemi.com FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT August 2015 Symbol Parameter FGA6530WDF Unit o RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.85 RJC(Diode) Thermal Resistance, Junction to Case, Max. 3.5 oC/W C/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGA6530WDF FGA6530WDF TO-3PN Tube - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.52 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 30 mA, VCE = VGE IC = 1 mA, Reference to 25oC On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.1 5.6 7.6 V IC = 30 A, VGE = 15 V - 1.8 2.3 V IC = 30 A, VGE = 15 V, TC = 175oC - 2.4 - V - 1072 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 36 - pF - 13 - pF - 12 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 19.2 - ns td(off) Turn-Off Delay Time - 42.4 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 162 - uJ Ets Total Switching Loss - 1122 - uJ td(on) Turn-On Delay Time - 12.8 - ns tr Rise Time - 27.2 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss ©2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 - 7.2 - ns - 960 - uJ - 46.4 - ns - 12.8 - ns - 1430 - uJ - 310 - uJ - 1740 - uJ www.fairchildsemi.com FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 30 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 (Continued) Min. Typ. Max Unit - 37.4 - nC - 7.2 - nC - 15 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 15 A IF = 15 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 1.7 2.6 TC = 175oC - 1.62 - TC = 175oC - 76 - TC = 25oC - 81 - TC = 175oC - 257 - TC = 25oC - 254 - TC = 175oC - 1189 - V uJ ns nC www.fairchildsemi.com FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 90 10V 60 45 VGE = 8V 45 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Common Emitter VGE = 15V o TC = 25 C o TC = 175 C 60 45 30 15 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Common Emitter VGE = 15V 3 60A 30A 2 IC = 15A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 16 12 IC = 15A 8 30A 60A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 6 1 -100 -50 0 50 100 150 200 o Collector-Emitter Case Temperature, TC [ C] Figure 5. Saturation Voltage vs. VGE 20 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 0 4 75 Collector-Emitter Voltage, VCE [V] VGE = 8V 30 90 0 10V 15 Figure 3. Typical Saturation Voltage Characteristics 0 12V 60 15 0 15V 75 12V 30 20V o TC = 175 C 15V Collector Current, IC [A] Collector Current, IC [A] 90 20V o TC = 25 C 75 Figure 2. Typical Output Characteristics TC = 175 C 16 12 30A 8 IC = 15A 4 0 20 4 60A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] Capacitance [pF] o Cies 1000 100 Coes Common Emitter VGE = 0V, f = 1MHz o 300V 9 10 Collector-Emitter Voltage, VCE [V] 3 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 8 16 24 Gate Charge, Qg [nC] 40 1000 td(on) 10 Switching Time [ns] tr Switching Time [ns] 32 Figure 10. Turn-off Characteristics vs. Gate Resistance 100 Common Emitter VCC = 400V, VGE = 15V IC = 30A td(off) 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 5 400V 6 0 1 VCC = 200V Cres TC = 25 C 10 TC = 25 C 12 1 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 80 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 80 Figure 12. Turn-on Characteristics vs. Collector Current 300 5000 Switching Time [ns] Switching Loss [uJ] 100 Eon 1000 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 td(on) Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C 100 o o TC = 175 C TC = 175 C 50 tr 0 10 20 30 40 50 60 Gate Resistance, RG [] ©2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 1 70 80 0 15 30 45 60 75 90 Collector Current, IC [A] 5 www.fairchildsemi.com FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10000 300 Eon 100 10 Switching Loss [uJ] Switching Time [ns] td(off) tf Common Emitter VGE = 15V, RG = 6 1000 Eoff 100 Common Emitter VGE = 15V, RG = 6 o TC = 25 C o TC = 25 C o TC = 175 C o 1 TC = 175 C 0 15 30 45 60 Collector Current, IC [A] 10 75 90 0 15 30 45 60 75 90 Collector Current, IC [A] Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 100 150 Square Wave o 10s VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] TJ