FGA6540WDF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA6540WDF 650 V, 40 A Field Stop Trench IGBT Features • • • • • • • • • General Description =175oC Maximum Junction Temperature : TJ Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 40 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for welder and industrial application where low conduction and switching losses are essential. Applications • Welder and Industrial Application • Power Factor Correction C G G C TO-3PN E E Absolute Maximum Ratings T C Symbol VCES VGES IC = 25°C unless otherwise noted Description FGA6540WDF Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage  20 V  30 V 80 A Transient Gate to Emitter Voltage Collector Current @ TC = 25oC 100oC Collector Current @ TC = ILM (1) Pulsed Collector Current @ TC = 25oC ICM (2) Pulsed Collector Current IF IFM (2) PD Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current 40 A 120 A 120 A 40 A 20 A 120 A W Maximum Power Dissipation @ TC = 25oC 238 Maximum Power Dissipation @ TC = 100oC 119 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 60  Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 1 www.fairchildsemi.com FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT April 2015 Symbol Parameter FGA6540WDF Unit RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.63 oC/W RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.75 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGA6540WDF FGA6540WDF TO-3PN Tube - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage IC = 1 mA, Reference to 25oC - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA 4.1 5.6 7.6 V On Characteristics VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 1.8 2.3 V Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V - VCE(sat) IC = 40 A, VGE = 15 V, TC = 175oC - 2.31 - V - 1525 - pF - 60 - pF - 20 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 16.8 - ns tr Rise Time - 34.4 - ns td(off) Turn-Off Delay Time - 54.4 - ns tf Fall Time - 10 - ns Eon Turn-On Switching Loss - 1.37 - mJ Eoff Turn-Off Switching Loss - 0.25 - mJ VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 1.62 - mJ td(on) Turn-On Delay Time - 16 - ns tr Rise Time - 35.2 - ns td(off) Turn-Off Delay Time - 57.6 - ns tf Fall Time - 12.8 - ns Eon Turn-On Switching Loss - 1.89 - mJ Eoff Turn-Off Switching Loss - 0.47 - mJ Ets Total Switching Loss - 2.36 - mJ ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 (Continued) Min. Typ. Max Unit - 55.5 - nC - 9.8 - nC - 21 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF =20 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 1.5 1.95 TC = 175oC - 1.37 - TC = 175oC - 153 - TC = 25oC TC = 175oC - 101 - - 238 - TC = 25oC - 343 - TC = 175oC - 1493 - V uJ ns nC www.fairchildsemi.com FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 4 www.fairchildsemi.com FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 Figure 12. Turn-on Characteristics vs. Collector Current 5 www.fairchildsemi.com FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 6 www.fairchildsemi.com FGA6540WDF — 650 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21.Transient Thermal Impedance of IGBT PDM t1 t2 Figure 22.Transient Thermal Impedance of Diode PDM t1 ©2015 Fairchild Semiconductor Corporation FGA6540WDF Rev. 1.1 7 t2 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3° 20.10 19.70 16.96 16.56 18.90 18.50 3° 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4° 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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